PTF 10036 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs. Input Power 60 Efficiency (%) 80 50 Output Pow er 60 40 40 30 VDD = 28 V IDQ = 800 mA Total f = 960 MHz 20 Efficiency Output Power (Watts) 100 100 234 36 569 74 A-1 4 20 0 10 0 1 2 3 4 5 6 Input Power (Watts) Package 20240 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 800 mA Total, f = 900 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W(PEP), IDQ = 800 mA Total, f = 867, 867.1 MHz—all phase angles at frequency of test) Symbol Min Typ Max Units Gps 11.0 12.5 — dB P-1dB 85 90 — Watts h 50 55 — % Y — — 3:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10036 Electrical Characteristics Characteristic (100% Tested—characteristics, conditions and limits shown per side) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.8 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage(1) VDSS 65 Vdc Gate-Source Voltage(1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD Above 25°C derate by 250 Watts 1.43 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.7 °C/W (1) per side Typical Performance Broadband Test Fixture Performance Broadband Test Fixture Performance 18 9 6 IDQ = 800 mA Total POUT = 85 W 3 40 -300 20 -10 10 -15 0 0 860 865 870 875 880 885 890 895 900-20 Return Loss (dB) 50 12 IDQ = 800 mA Total ‘ W POUT = 85 8 6 4 925 Frequency (MHz) -30 5 -15 20 Return Loss (dB) 935 945 Frequency (MHz) 2 40 VDD = 28 V Gain (dB) 10 955 10 -25 0 -35 Efficiency VDD = 28 V 60 Return Loss Gain (dB) 50 Gain Gain 12 Efficiency (%) 14 Return Loss Efficiency (%) Efficiency 60 15 16 e PTF 10036 Intermodulation Distortion vs. Power Output Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power & Efficiency 120 Gain (dB) Output Pow er (W) 20 100 15 80 G a in (d B ) 10 60 VDD = 28 V 5 Efficiency (%) 40 IDQ = 800 mA Total 0 860 880 900 920 940 20 960 VDD = 28 V IDQ = 800 mA Total f1 = 880.0 MHz -20 IMD (dBc) 25 -10 -30 f2 = 880.1 MHz 7th -50 -60 10 20 40 50 60 70 80 90 100 Power Gain vs. Output Power 16 90 15 Power Gain (dB) Output Power (Watts) Output Power vs. Supply Voltage 80 IDQ = 800 mA Total f = 960 MHz PIN = 4.5 W IDQ = 800 mA 14 13 IDQ = 400 mA 12 VDD = 28 V f = 960 MHz 11 IDQ = 200 mA 10 50 20 22 24 26 28 30 32 1.0 34 Cgs 100 80 60 Cds 40 20 Crss 0 0 10 20 30 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) 20 18 16 14 12 10 8 6 4 2 0 VGS = 0 V f = 1 MHz 1.03 Crss (pF) 160 120 100.0 Bias Voltage vs. Temperature Capacitance vs. Supply Voltage (one side) * 140 10.0 Output Power (Watts) Supply Voltage (Volts) Cds & Cgs (pF) 30 Output Power (Watts-PEP) 100 60 5th -40 Frequency (MHz) 70 3rd 1.01 1.00 0.43 0.99 1.25 0.98 2.08 2.9 0.97 3.71 0.96 4.53 0.95 40 -20 Supply Voltage (Volts) 30 80 Temp. (°C) * This part is internally matched. Measurements of the finished product will not yield these results. 3 130 e PTF 10036 Impedance Data Z0 = 50 W R --> VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total N ER A TO T HS E LE NG Z Load W R jX R jX 860 2.5 -8.8 3.9 0.1 900 2.0 -10.0 3.2 0.1 960 2.7 -10.4 2.6 -0.6 0.4 0.3 Z Source 860 MHz < MHz 0.1 AV -- - W Z Source W 0.2 0.1 860 MHz 960 MHz D Frequency Z Load 0.0 S G G TO W A RD LOAD - - WAV E LE NG THS T OW AR D GE Z Load 0.1 D 0 .2 Z Source 960 MHz 0.2 5 5 0.0 0.3 Typical Scattering Parameters (one side only) (VDS = 28 V, ID = 1.5 A) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.913 0.934 0.950 0.962 0.968 0.971 0.974 0.975 0.976 0.976 0.975 0.975 0.972 0.971 0.968 0.968 0.962 0.956 0.945 0.926 0.887 0.803 0.662 0.659 0.803 0.897 0.938 0.963 0.977 -167.7 -171.3 -173.4 -175.0 -176.4 -177.6 -178.6 -179.6 179.4 178.4 177.4 176.6 175.7 174.6 173.3 172.4 171.0 169.6 167.8 165.7 163.0 160.6 164.4 -178.9 -174.8 -177.2 -179.7 178.1 176.3 11.706 6.956 4.507 3.257 2.413 1.905 1.555 1.297 1.117 0.978 0.881 0.801 0.750 0.713 0.688 0.677 0.686 0.704 0.750 0.819 0.938 1.128 1.299 1.183 0.856 0.587 0.416 0.315 0.238 62.7 47.4 37.7 29.4 22.8 18.3 13.2 10.4 6.5 3.6 0.9 -1.8 -3.8 -6.0 -8.6 -10.9 -13.6 -17.3 -21.4 -27.7 -36.3 -51.8 -77.1 -109.8 -136.0 -151.8 -161.0 -169.1 -174.6 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.002 0.001 0.002 0.002 0.002 0.003 0.004 0.005 0.005 0.006 0.007 0.008 0.009 0.011 0.013 0.014 0.012 0.007 0.004 0.002 0.003 0.003 -21.5 -31.1 -38.4 -43.8 -42.4 -35.6 -30.6 -11.8 7.4 24.6 49.2 58.7 65.0 67.9 66.2 71.8 71.3 69.6 67.1 64.8 57.6 46.6 27.1 -0.2 -16.6 -14.3 13.8 50.8 60.3 0.605 0.725 0.799 0.873 0.887 0.922 0.943 0.943 0.961 0.960 0.960 0.969 0.962 0.967 0.970 0.962 0.965 0.966 0.962 0.961 0.964 0.965 0.981 1.006 1.008 1.004 1.005 0.996 1.000 -126.8 -136.6 -143.5 -148.7 -153.0 -156.1 -158.9 -160.6 -162.6 -164.0 -165.1 -166.6 -167.1 -168.3 -169.0 -169.4 -170.5 -170.8 -171.0 -171.9 -171.6 -171.4 -171.8 -172.1 -173.7 -175.0 -175.1 -176.2 -176.4 4 S22 e PTF 10036 Test Circuit Schematic for f = 900 MHz DUT C1-2 C3 C4 C5-6, C9, C12-13, C17 C7, C10 C8, C11, C14, C18 C15, C16, C19, C20 L1. L2 R1, R2, R4, R5 R3, R6 l1, l22 PTF 10036 15 pF, Capacitor ATC 100 B 0.35–3.5 pF, Variable Capacitor 1–9 pF, Variable Capacitor 33 pF, Capacitor ATC 100 B 10 mF, +10 V Electrolytic Capacitor 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Electrolytic Capacitor 4 Turn, #20 AWG, .120” I.D. 1.0 K, W Resistor 5.1 K, 1/4 W Resistor 50 W, .030 l 5 l2, l21 l3, l20 l4, l19 l5, l6 l7, l10 l8, l9 l11, l12 l13, l14 l15, l16 l17, l18 20 W, .080 l 32 W, .191 l 25 W, .500 l 25 W, .091 l 7 W, .056 l 13.0 W, .017 l 13.0 W, .017 l 7.0 W, .064 l 10.0 W, .029 l 19.0 W, .028 l Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Components Layout (not to scale) e PTF 10036 Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1997 Ericsson Inc. EUS/KR 1301-PTF 10036 Uen Rev. A 02-18-99