PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ • Full Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • Excellent Thermal Stability • 100% Lot Traceability 100 120 80 Output Power 90 60 Efficiency 60 40 VDD = 28 V 30 Efficiency (%) Output Power (Watts) Typical Output Power vs. Input Power 150 101 A-12 345 20 698 49 20 IDQ = 1.2 A Total f = 1990 MHz 0 0 0 3 6 9 12 15 18 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.2 A Total, f = 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.2 A Total, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 1.2 A Total, f = 1.99 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 10 11 — dB P-1dB 120 — — Watts hD — 40 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10120 Electrical Characteristics Characteristic (per side) (100% Tested—characteristics, conditions and limits shown per side) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V Gate Threshold Voltage VDS = 10 V, ID = 150 mA Forward Transconductance VDS = 10 V, ID = 2 A Symbol Min Typ Max Units V(BR)DSS 65 — — Volts IDSS — — 5.0 mA VGS(th) 3.0 — 5.0 Volts gfs — 4.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage(1) VDSS 65 Vdc Gate-Source Voltage(1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD 440 Watts 2.51 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.39 °C/W (1) per side Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 10 100 Gain (dB) VDD = 28 V 9 80 IDQ = 1.2 A Total 60 8 40 Efficiency (%) 7 1750 1850 1950 20 2050 Efficiency (%) @P-1dB 11 10 45 VDD = 28 V Gain (dB) 9 Return Loss (dB) 8 1930 Frequency (MHz) 1940 1950 1960 1970 Frequency (MHz) 2 30 IDQ = 1.2 A Total POUT = 120 W 1980 Efficiency 120 60 0 - 15 5 -10 -15 0 -20 1990 Return Loss 140 11 Gain (dB) 160 Gain (dB) Output Power (W) Output Power & Efficiency 12 Broadband Test Fixture Performance 12 e PTF 10120 Intermodulation Distortion vs. Output Power Power Gain vs. Output Power (as measured in a broadband circuit) 13 -15 VDD = 28 V IDQ = 1200 mA -25 11 10 IMD (dBc) IDQ = 600 mA 9 IDQ = 300 mA VDD = 28 V f = 1990 MHz 8 IDQ = 1.2 A Total -35 f2 = 1960 MHz IM5 -45 -55 IM7 -65 7 1 10 100 0 1000 20 40 60 80 100 120 Capacitance vs. Supply Voltage (per side) * Output Power vs. Supply Voltage 180 240 140 120 IDQ = 1.2 A Total f = 1990 MHz 30 200 Cds and Cgs (pF) 160 100 25 VGS =0 V f = 1 MHz 160 20 Cgs 120 15 Cds 80 10 40 80 Crss 0 22 24 26 28 30 140 Output Power (Watts-PEP) Output Power (Watts) Output Power (Watts) IM3 f1 = 1959 MHz 32 5 0 0 34 Crss Power Gain (dB) 12 Supply Voltage (Volts) 10 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Impedance Data (VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total) Z Source D Z Load S G G D Z Source W Frequency Z Load W GHz R jX R jX 1.75 7.6 -10.5 4.6 -3.6 1.80 8.8 -13.0 4.2 -3.2 1.85 9.8 -14.1 4.0 -2.8 1.90 11.0 -15.2 3.7 -2.8 1.95 12.0 -17.0 3.6 -3.2 2.00 13.4 -17.5 3.4 -3.8 2.05 14.6 -18.0 3.2 -4.4 3 Z0 = 50 W e PTF 10120 Test Circuit Test Circuit Block Diagram for f = 2.0 GHz Q1 l1, l2 l3, l4 l5, l6 l7, l8 l9, l10 l11, l12 l13, l14 C1, C2, C3, C4, C5, C6, C11, C12 C7, C8, C15, C16 C9, C10, C13, C14 C17 PTF 10120 .048 l @ 2.0 GHz .18 l @ 2.0 GHz .097 l @ 2.0 GHz .129 l @ 2 GHz .031 l @ 2 GHz .25 l @ 2 GHz LDMOS RF Transistor Microstrip 50 W Microstrip 31.7 W Microstrip 70 W Microstrip 9.35 W Microstrip 7.6 W Microstrip 8.8 W Microstrip 65 W 10 pF Chip Cap ATC 100 B 0.1 mF Chip Cap K1206 10 mF SMT Tantalum Cap 0.7 pF Chip Cap ATC 100 B 4 L1, L2 L3, L4 R1, R2, R3, R4 R5, R6 R7, R8 R9, R10 T1, T2 Circuit Board 2.7 nh SMT Coil 4 mm SMT Ferrite Bead 220 W Chip Resistor K1206 2K SMT Potentiometer 10 W Chip Resistor K1206 1W Chip Resistor K1206 50 W Coaxial Balun .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10120 Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com\rfpower 5 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10120 Uen Rev. A 01-06-99 e Notes: 6