PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 85 Watts Min - Power Gain = 11 dB Typ • Full Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • Excellent Thermal Stability • 100% Lot Traceability Typical Power Output and Efficiency vs. Input Power 50 80 40 Efficiency 60 30 40 VDD = 28 V 20 20 IDQ = 1.15 A f = 1990 MHz 10 Power Output 0 Efficiency (%) x Power Output (Watts) 100 101 3456 54 00 A-12 35 0 0 3 6 9 12 15 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 10 W, IDQ = 1.15 A, f = 1.96, 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.15 A, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 90 W, IDQ = 1.15 A, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 90 W, IDQ = 1.15 A, f = 1.99 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 10.0 11 — dB P-1dB 85 — — Watts hD — 43 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10154 Electrical Characteristics Characteristic (100% Tested) Conditions Symbol Min Typ Max Units V(BR)DSS 65 — — Volts IDSS — — 5.0 mA VGS(th) 3.0 — 5.0 Volts gfs — 1.0 — Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V Gate Threshold Voltage VDS = 10 V, ID = 150 mA Forward Transconductance VDS = 10 V, ID = 2 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD 365 Watts 2.08 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.48 °C/W Typical Performance Power Gain vs. Output Power Narrowband Test Fixture Performance 12 60 6 VDD = 28 V, IDQ = 1.15 A POUT = 85 W 3 0 1900 1920 1940 30 -20 5 -10 Return Loss 10 -0 1960 1980 2000 Return Loss Gain (dB) 40 Power Gain (dB) 50 Efficiency 9 Efficiency Gain 12 11 IDQ = 1.2 10 IDQ = 0.6 IDQ = 0.3 9 VDD = 28 V f = 1990 MHz 8 1 Frequency (MHz) 10 Output Power (Watts) 2 100 e PTF 10154 Capacitance vs. Supply Voltage * 350 Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 250 5.025 0.97 7.975 30 80 5 50 Crss 0 0.95 -20 10 Cds 100 6.500 0.96 15 150 3.550 0.98 20 Cgs 200 2.075 0.99 VGS = 0 V f = 1 MHz 300 0.600 1.00 25 0 130 Crss 1.03 Cds and Cgs (pF) x Gate-Source Voltage (V) x Gate-Source Voltage vs. Case Temperature 10 20 30 0 40 Supply Voltage (Volts) Case Temperature (°C) * This part is internally matched. Measurements of the finished product will not yield these results. NER Impedance Data Z0 = 50 W 1990 MHz 0.1 S 1930 MHz 0 .0 G Z Source OA D T OW AR D L G TH S - W AV E LE NG TH Z Load 0 .1 D Z Source S TO W AR D GE VDD = 28 V, POUT = 85 W, IDQ = 1.15 A 1930 MHz Z Load R jX R jX 1930 2.9 3.0 1.4 -0.2 1960 2.5 2.6 1.4 -0.9 1990 2.1 1.2 1.4 -1.5 3 0.1 LE N GHz 1990 MHz A VE Z Load W W <--- Z Source W Frequency e PTF 10154 Test Circuit Test Circuit Block Diagram for f = 1.93–1.99 GHz Q1 PTF 10154 LDMOS RF Transistor 1.96 GHz IPM (OHMS) 0.105 l 1.96 GHz Microstrip 50 W 0.119 l 1.96 GHz Microstrip 50 W 0.073 l 1.96 GHz Microstrip 76.64 W 0.094 l 1.96 GHz Microstrip 9.73 W 0.126 l 1.96 GHz Microstrip 6.67 W 0.614 l 1.96 GHz Microstrip 9.62 W 0.170 l 1.96 GHz Microstrip 64.30 W 0.050 l 1.96 GHz Microstrip 50 W 0.073 l 1.96 GHz Microstrip 50 W C1, C9 Capacitor,10µF Digi-Key pcs 6106 C2, C10 Capacitor,0.1µF,50V Digi-Key PCC103BCT C3, C4, C7, C11 Capacitor,10pF ATC 100 b C5 Capacitor, variable 0.3-3.5pF JACO johanson 5801 C6 Capacitor,100µF,50V Digi-Key P5182-ND C8 Capacitor,0.1µF,50V Digi-Key P4525-ND J1, J2 Connector, SMA female,panel mount 1301-rpm 513 412/53 L1 Chip inductor,2.7µH L2 Ferrite, 6mm phillips 53/3/4.6-452 L3, L4 Inductor ,8nH coilcraft 0805CS-080 jbc R1, R2 Resistor, 220 ohm Digi-Key 220 qbk R3 Resistor, 1 ohm DIGI-KEY 1.0 qbk Circuit Board 0.050", 2 OZ Copper rogers corporation, TMM6 l1 l2 l3 l4 l5 l6 l7 l8 l9 4 Parts Layout (not to scale) e PTF 10154 Package Mechanical Specifications Package 20248 Primary Dimensions are in inches, altermate dimensions are mm. Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 5 Specifications subject to change without notice. LP © 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10154 Uen Rev. PA3 12-18-00