PZT669A NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT669A is designed for low frequency power amplifier complementary pair with PZT649A. REF. Date Code A C D E I H 6 6 9A B C Min. 6.70 2.90 0.02 0 0.60 0.25 E REF. Max. 7.30 3.10 0.10 10 0.80 0.35 B J 1 2 3 4 5 Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Absolute Maximum Ratings at TA=25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VE BO 5..0 V Collect Current (DC) IC 1..5 A Collect Current (Pulse) IC 3.0 A Total Power Dissipation PD 1.5 -55~+150 Tj, Tstg Operating Junction and Storage Temperature Range W o C ELECTRICAL CHARACTERISTICS (Tamb=25 o C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain DC Current Gain Transition Frequency Symbol BVCBO BV CEO BVEBO ICBO Cob *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 180 160 5 60 30 - Typ. Max. 14 - 10 1 1.5 200 - 140 Unit V V V uA pF V V MHz Test Conditions IC=-1mA, IE=0 IC=-10mA, IB =0 IE=1m A, IC=0 VCB=160V, IE=0 VCB=10V,f=1MHz IC=600mA, I B=50mA VCE=5V, I C=150mA VCE=5V, I C=150mA VCE=5V, I C=500mA VCE=5V, I C=10mA, f=100MHz *Pulse Test: Pulse Width≦380us, Duty Cycle≦2% CLASSIFICATION OF hFE1 Rank hFE1 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A B 60~120 C 100~200 Any changing of specification will not be informed individual Page 1 of 2 PZT669A Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2