SECOS PZTA27

PZTA27
NPN Transistor
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-223
Description
The PZTA27 is designed for darlington
amplifier high current gain collector
current to 500mA.
REF.
Date Code
A
C
D
E
I
H
A 2 7
B
C
E
ABSOLUTE MAXIMUM RATINGS
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0
10
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
o
Ta=25 C
Symbol
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
60
10
Collector Current
500
V
V
mA
IC
PD
TJ,Tstg
Parameter
Total Power Dissipation
2
Junction and Storage Temperature
-55~+150
W
C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Symbol
BVCBO
BVCES
BVEBO
I CBO
I EBO
I CES
Min
60
60
10
-
VCE(sat)
VBE(sat)
-
hFE1
hFE2
10K
10K
Typ.
-
Max
-
Unit
V
V
V
-
100
100
500
nA
nA
nA
I E= 10µA,IC=0
VCB=50V,IE=0
VEB=10V,IC=0
VCE=50V
1.5
V
I C=100mA,IB=0.1mA
2
-
V
I C=100mA,VCE=5V
-
Test Conditions
I C= 100µA,IE=0
I C= 100µA,VBE=0
VCE= 5 V, I C=10 mA
VCE= 5 V, I C=100mA
Any changing of specification will not be informed individual
Page 1 of 2
PZTA27
Elektronische Bauelemente
NPN Transistor
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2