QSB363C Subminiature Plastic Silicon Infrared Phototransistor ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24° Clear Plastic Package Matched Emitters: QEB363 or QEB373 Description The QSB363C is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. Package Dimensions EMITTER 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .118 (3.0) .102 (2.6) SCHEMATIC .059 (1.5) .051 (1.3) COLLECTOR 0.055 (1.4) 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.024 (0.6) EMITTER NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.2 1 www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor September 2005 Parameter Symbol Rating Unit Operating Temperature TOPR -25 to +85 °C Storage Temperature TSTG -40 to +85 °C (Iron)(2,3,4) TSOL 260 °C Soldering Temperature (Flow)(2,3) TSOL 260 °C Collector Emitter Voltage VCEO 30 V Emitter Collector Voltage VECO 5 V PC 75 mW Soldering Temperature Power Dissipation(1) Notes 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100 µs, T = 10 ms. 5. D = 940 nm, GaAs. Electrical/Optical Characteristics (TA =25°C) Parameters Test Conditions Peak Sensitivity Wavelength Symbol Min. Typ. Max Units λP — 940 — nm Θ — ±12 — ICEO — — 100 nA Collector-Emitter Breakdown Voltage IC = 100 µA, Ee = 0mW/cm2 BVCEO 30 — — V Emitter-Collector Breakdown Voltage IE = 100 µA, Ee = 0mW/cm2 BVECO 5 — — V VCE = 5V Ee = 0.5 mW/cm2 IC(on) 1.0 1.5 — mA IC = 2 mA Ee = 1 mW/cm2 VCE (SAT) — — 0.4 V VCE = 5 V, IC = 1 mA RL = 1000Ω tr tf — — 15 15 — — µs µs Reception Angle Collector Dark Current On-State Collector Current Collector-Emitter Saturation Voltage Rise Time Fall Time VCE = 20V, Ee = 0mW/cm2 2 QSB363C Rev. 1.0.2 www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Fig. 1 Collector Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity 1.0 100 Relative Spectral Sensitivity Collector Power Dissipation Pd (mW) TA = 25˚C 80 60 40 20 0.8 0.6 0.4 0.2 0 0 -25 0 25 50 100 75 85 100 300 500 10 VCE = 5 V Ee = 1 mW/cm2 Collector Current IC (mA) Relative Collector Current (%) 160 120 100 80 60 40 1100 1300 VCE = 5 V TA = 25˚C 1 0.1 0.01 20 0 0 20 10 40 30 50 60 0.001 0.01 70 1 0.1 Irradiance Ee (mW/cm2) Fig. 5 Collector Dark Current vs. Ambient Temperature Fig. 6 Collector Current vs. Collector Emitter Voltage 10-6 5 14 VCE = 20 V 12 2 -7 10 5 2 10-8 5 2 10-9 5 10 Ee=1.50mW/cm2 8 Ee=1.25mW/cm2 6 Ee=1.0mW/cm2 4 Ee=0.75mW/cm2 2 2 10-10 Ee=0.5mW/cm2 0 0 25 50 75 100 0 1 2 3 4 Collector Emitter Voltage VCE (V) Ambient Temperature (°C) 3 QSB363C Rev. 1.0.2 10 Ambient Temperature TA (˚C) Collector Current IC (mA) Collector Dark Current ICEO (A) 900 Fig. 4 Collector Current vs. Irradiance Fig. 3 Relative Collector Current vs. Ambient Temperature 140 700 Wavelength λ (nm) Ambient Temperature TA (˚C) www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor Typical Performance Curves Features Three lead forming options: Gull Wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reflow solder processes CL 0.012±0.004 (0.3±0.1) +0.13 0.029±0.004 (0.75±0.1) + Polarity 0.043±0.008 0.055±0.008 R0.031±.004 (1.1±0.2) (1.4±0.2) (0.8±0.1) 0.051±0.004 (1.3±0.1) 0.055±0.004 (1.4±0.1) 0.12±0.008 (3.05±0.2) 0.169±0.008 (4.3±0.2) +0.005 0.023 –0 (0.6 +0.13 ) –0 ) 0.228±0.008 (5.8±0.2) 0.016±0.004 (0.4±0.1) – 0.006±0.002 (0.15±0.05) 0.006±0.002 (0.15±0.05) 0.025±0.004 (0.65±0.1) Polarity 0.043±0.008 0.055±0.008 (1.1±0.2) (1.4±0.2) R0.031±.004 (0.8±0.1) 0.032 +0.005 –0 CL + 0.106±0.008 (2.7±0.2) – 0.020±0.004 (0.5±0.1) 0.157±0.008 (4.0±0.2) CL Cathode 0.079±0.008 (2.0±0.2) 0.016±0.004 (0.4±0.1) 0.020±0.004 (0.5±0.1) CL Cathode 0.098±0.004 (2.5±0.1) ø0.075±0.008 (1.9±0.2) 0.079±0.008 (2.0±0.2) 0.098±0.004 (2.5±0.1) ø0.075±0.008 (ø1.9±0.2) (0.83 –0 Z-Bend Lead Configuration 0.051±0.004 (1.3±0.1) 0.106±0.008 (2.7±0.2) Gull Wing Lead Configuration 0.025±0.004 (0.65±0.1) ■ ■ ■ ■ 0.055±0.004 (1.4±0.1) 0.029±0.004 (0.75±0.1) Yoke Lead Configuration 0.098±0.004 (2.5±0.1) CL 0.006±0.002 (0.15±0.05) 0.185±0.008 (4.7±0.2) 0.291±0.008 (7.4±0.2) 0.029±0.004 (0.75±0.1) 0.051±0.004 (1.3±0.1) 0.106±0.008 (2.7±0.2) R0.016±.004 (0.4±0.1) + Polarity 0.043±0.008 0.055±0.008 (1.1±0.2) (1.4±0.2) R0.031±.004 (0.8±0.1) 0.016±0.004 (0.4±0.1) – 0.025±0.004 (0.65±0.1) 0.020±0.004 (0.5±0.1) CL Cathode 0.079±0.008 (2.0±0.2) ø0.075±0.008 (1.9±0.2) 0.055±0.004 (1.4±0.1) 4 QSB363C Rev. 1.0.2 www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor Package Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 QSB363C Rev. 1.0.2 www.fairchildsemi.com QSB363C Subminiature Plastic Silicon Infrared Phototransistor TRADEMARKS