Data Sheet Schottky Barrier Diode RB161L-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 ① ② 0.1±0.02 0.1 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 4.2 1.2±0.3 3 5.0±0.3 3)High reliability 3 4.5±0.2 Features 1)Small power mold type.（PMDS） 2)Low VF 2.0 2.6±0.2 Structure ROHM : PMDS JEDEC : SOD-106 Manufacture Date Date ① ② Manufacture Taping specifications(Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Limits Symbol VRM VR Io IFSM Tj Tstg Unit V V A A C C 40 20 1 70 125 40 to 125 (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Conditions Min. Typ. Max. Forward voltage Symbol VF - - 0.40 V IF=1.0A Reverse current IR - - 1 mA VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 Unit 2011.04 - Rev.H Data Sheet RB161L-40 Ta=75℃ 1000000 Ta=150℃ 0.1 Ta=25℃ Ta=-25℃ 0.01 100000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 100 10 1 0 200 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 5 600 10 15 20 25 30 0 340 AVE:347.7mV 330 400 350 300 250 200 AVE:110.3uA 150 100 320 270 250 240 AVE:251.8pF 230 220 210 200 Ct DISPERSION MAP 200 AVE:127.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 5 AVE:9.3ns PEAK SURGE FORWARD CURRENT:IFSM(A) 50 REVERSE RECOVERY TIME:trr(ns) 8.3ms 100 0 0 Ifsm 150 8.3ms 8.3ms 1cyc 100 50 0 1 IFSM DISPERSION MAP trr DISPERSION MAP t 100 50 0 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 0.9 Mounted on epoxy board Rth(j-c) 10 IM=100mA 1 1ms IF=0.5A D=1/2 0.7 DC 0.6 Sin(θ＝180) 0.5 0.4 0.3 0.2 time 0.1 300us 0.1 0.01 0.8 Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) Ifsm 150 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 200 30 260 0 20 1cyc 25 Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ifsm 20 280 50 VF DISPERSION MAP 150 15 290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 350 Ta=25℃ VR=20V n=30pcs 450 REVERSE CURRENT:IR(uA) 360 10 300 500 Ta=25℃ IF=1A n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 370 FORWARD VOLTAGE:VF(mV) f=1MHz Ta=125℃ 10000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 0 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.04 - Rev.H Data Sheet RB161L-40 50 3.0 D=1/2 DC 20 Sin(θ＝180) 10 0 0A 0V 2.5 2.0 DC 1.5 t T VR D=t/T VR=20V Tj=125℃ D=1/2 1.0 Sin(θ＝180) 0.5 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V 2.5 2 DC Io t T VR D=t/T VR=20V Tj=125℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 0.0 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 40 3 Io 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:0T(℃) Derating Curveﾞ(Io-Tc) 125 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 AVE:12.3kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.H Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A