RF2126 2 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 2500MHz. The device is packaged in an 8-lead plastic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS -A- 3.90 ± 0.10 0.43 ± 0.05 Exposed Heat Sink 0.05 ± 0.05 2.70 ± 0.10 4.90 ± 0.10 1.27 6.00 ± 0.20 1.40 ± 0.10 Dimensions in mm. 8° MAX 0° MIN 0.22 ± 0.03 0.60 ± 0.15 1.70 ± 0.10 NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A". Package Style: SOIC-8 Slug Features • Single 3V to 6.5V Supply • 1.3W Output Power • 12dB Gain • 45% Efficiency RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 BIAS CIRCUIT VCC 4 • Power Down Mode • 1800MHz to 2500MHz Operation 6 RF OUT 5 RF OUT PACKAGE BASE Ordering Information RF2126 RF2126 PCBA High Power Linear Amplifier Fully Assembled Evaluation Board GND Functional Block Diagram Rev A5 010207 RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-73 RF2126 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Rating Unit Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR -0.5 to +7.5 -0.5 to +5V 450 +20 20:1 VDC V mA dBm Operating Ambient Temperature Storage Temperature -40 to +85 -40 to +100 °C °C Parameter Specification Min. Typ. Max. Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =6.0V, VPC =3.0V, ZLOAD =12Ω, Pin = 0dBm, Freq=2450MHz, Idle current=180mA Overall Frequency Range Maximum Output Power Maximum Output Power Maximum Output Power Total Power Added Efficiency Total Power Added Efficiency Total Power Added Efficiency Small-signal Gain Second Harmonic Third Harmonic Condition 1800 +30.0 Input VSWR +27.0 2500 MHz dBm +29 +31.0 45 45 45 12 -55 -60 dBm dBm % % % dB dBc dBc 1.5:1 VCC =3.6V, PIN =+19dBm VCC =4.8V, PIN =+19dBm VCC =6.0V, PIN =+19dBm Maximum output, VCC =3.6V Maximum output, VCC =4.8V Maximum output, VCC =6.0V See Application Schematic, PIN =+17dBm With external matching network; see application schematic Two-tone Specification Average Two-Tone Power IM3 IM5 IM7 -24 +27 -25 -35 -55 dBm dBc dBc dBc PEP-3dB POUT =+24dBm for each tone POUT =+24dBm for each tone POUT =+24dBm for each tone Power Control VPC Power Control “OFF” 1.5 0.2 3.0 0.5 3.5 V V 3.0 270 To obtain 180mA idle current Threshold voltage at device input 350 6.5 410 V mA POUT =+30dBm, VCC =6.0V 0.5 10 µA VPC =0.2V Power Supply Power Supply Voltage Supply Current Power Down Current 2-74 Rev A5 010207 RF2126 Function RF IN 2 3 RF IN PC 4 VCC 5 RF OUT 6 7 8 Pkg Base RF OUT RF OUT RF OUT GND Rev A5 010207 Description Interface Schematic RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50Ω is obtained by providing an external series capacitor of 1.6pF and then a shunt capacitor of 2.0pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Same as pin 1. 2 Power control pin. For obtaining maximum performance the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device, i.e. maintaining a fixed current level, or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wavelength microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 1.8pF and a series capacitor of 3.3pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Since there are several output pins available, which are internally connected, one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5. POWER AMPLIFIERS Pin 1 Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. 2-75 RF2126 Application Schematic 2450MHz Operation 1.6 pF RF IN 2 1 8 2 7 POWER AMPLIFIERS 2.0 pF 3.3 pF RF OUT VPD 1.8 pF 3 BIAS CIRCUIT 1000 pF 4 6 5 PACKAGE BASE VCC 4.7 nH 1000 pF 33 pF Evaluation Board Schematic 2450 MHz Operation (Download Bill of Materials from www.rfmd.com.) P1 P1-1 P1-3 RF IN J1 VCC 2 GND 3 VPC 1.6 pF C2 50 Ω µstrip 2.0 pF C1 1 8 2 7 3 6 VPC 1000 pF C6 BIAS CIRCUIT PACKAGE BASE VCC 1 uF C8 1000 pF C7 3.3 pF C4 RF OUT 50 Ω µstrip J2 1.8 pF C3 5 4 2-76 1 4.7 nH L1 33 pF C5 Rev A5 010207 RF2126 Evaluation Board Layout 1.5” x 1.0” Board Thickness 0.031”, Board Material FR-4 POWER AMPLIFIERS 2 Rev A5 010207 2-77 RF2126 POWER AMPLIFIERS 2 2-78 Rev A5 010207