RF2128P • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery Powered Equipment 2 • Wireless LANs The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1900MHz and 2200MHz, with over 100mW transmitted power, or as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation. The part is packaged in a low-cost plastic package with a metal backside. .157 .150 1 Si Bi-CMOS GaAs HBT GaAs MESFET SiGe HBT Si CMOS EXPOSED HEATSINK .003 .001 .196 .189 .123 .107 .050 .244 .230 .061 .055 .087 .071 8°MAX 0°MIN .035 .016 .010 .007 Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Si BJT .019 .014 ! • Single 3.0V to 6.5V Supply • 100mW Linear Output Power • 28dB Small Signal Gain • 33% Efficiency VCC2 1 BIAS CIRCUITS 8 VCC1 • Digitally Controlled Power Down Mode • 1900MHz to 2500MHz Operation GND1 2 7 RF OUT PD 3 6 RF OUT RF IN 4 5 GND 2 PACKAGE BASE RF2128P RF2128P PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board GND Rev A4 990216 RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-89 POWER AMPLIFIERS • PCS Communication Systems RF2128P Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +7.5 -0.5 to +5.5 125 +12 20:1 -40 to +85 -40 to +150 VDC V mA dBm °C °C Specification Min. Typ. Max. Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition T=25 °C, VCC =5V, VPD =5.0V, Freq=2400MHz Overall Frequency Range Maximum Output Power 1dB Compression Output Power Total CW Efficiency Small-signal Gain Second Harmonic Third Harmonic Isolation Input VSWR Input Impedance Noise Figure 1900 to 2500 +22 >+24 +21 33 28 -23 -19 15 2:1 50 7 MHz dBm dBm dBm % dB dBc dBc dB +17 -27 -40 -44 30 dBm dBc dBc dBc % VCC V Voltage supplied to the input; device is “on” 1.2 V Voltage supplied to the input; device is “off” 65 V V mA mA µA VCC =5.0V, VPD =5.0V, PIN =-3.0dBm VCC =6.0V, VPD =5.5V, PIN =0dBm Maximum output VPC =0.2V Ω dB Two-tone Specification Average Two-Tone Power IM3 IM5 IM7 Two-Tone Power-Added Efficiency PEP-3dB POUT =+14dBm for each tone POUT =+14dBm for each tone POUT =+14dBm for each tone Power Down Control Power Down “ON” Power Down “OFF” 0 Power Supply Voltage Current Current 2-90 5 3.0 to 6.5 50 85 10 Specifications Operating Operating Idle At maximum output power Power Down Rev A4 990216 RF2128P Function VCC2 2 GND1 3 PD 4 RF IN 5 GND2 6 RF OUT 7 8 RF OUT VCC1 Pkg Base GND Description Interface Schematic Power supply for the driver stage and interstage matching. External matching on this pin is required to optimize the gain. The matching on this port also greatly affects the input impedance. A decoupling capacitor of 330pF is required, together with a series RC for tuning for maximum gain at the desired frequency. See the application information for details. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typical 1.2V or less at room temperature. When this pin is "high", all circuits are operating normally. A "high" is VCC. If PD is below VCC output power and performance will be degraded. This could be used to obtain some gain control, but results are not guaranteed. RF Input. This is a 50Ω input, but the actual impedance depends on the matching provided on pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground. Ground connection for the output stage. Keep traces physically short and connect immediately to the ground plane for best performance. RF Output and power supply for the output stage. Bias for the output stage needs to be provided on this pin. This can be done through a quarter-wave microstrip that is RF grounded on the other end. For matching to 50Ω, an external series microstrip line is required. Same as pin 6. 2 POWER AMPLIFIERS Pin 1 Power supply for the bias circuits. An external RF bypass capacitor of 22pF is required. Keep the traces to the capacitor as short as possible, and connect the capacitor immediately to the ground plane. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. VCC (PCB mat'l: FR-4, Thickness: 0.031") 330 pF 22 pF 50 Ω µstrip L=100 mil L=100 mil, W=20 mil 1 22 pF BIAS CIRCUITS 8 2 7 3 6 L=220 mil, W=10 mil 33 pF VPD RF IN 8 pF 100 Ω, 200 mil 4 67 Ω, 0.20" RF OUT 2 pF 5 PACKAGE BASE GND Rev A4 990216 2-91 RF2128P (Download Bill of Materials from www.rfmd.com.) 2128401 Rev C P1 POWER AMPLIFIERS 2 VCC P1-1 C5 1 µF C4 330 pF C3 22 pF 50 Ω µstrip L=100 mil L=100 mil, W=20 mil 1 C2 33 pF PD RF IN J1 C6 22 pF BIAS CIRCUITS C1 8 pF 100 Ω, 200 mil VCC 2 GND 3 PD 8 2 7 3 6 4 5 L=220 mil, W=10 mil 67 Ω, 0.20" PACKAGE BASE 50 Ω µstrip P1-3 1 GND C7 2 pF 50 Ω µstrip RF OUT J2 (PCB mat'l: FR-4, Thickness: 0.031") !"# " 2-92 Rev A4 990216