INTERSIL RFP4N40

RFM4N35, RFM4N40, RFP4N35, RFP4N40
Semiconductor
Data Sheet
4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs
[[ /Title
/Title These are N-channel enhancement-mode silicon-gate
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power field effect transistors designed for applications such
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as switching regulators, switching converters, motor drivers,
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RFM4N
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/Autho transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
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Ordering Information
/Subject
/CrePART NUMBER
PACKAGE
BRAND
(4A,
ator ()
RFM4N35
TO-204AA
RFM4N35
350V
/DOCI
RFM4N40
TO-204AA
RFM4N40
and
NFO
RFP4N35
TO-220AB
RFP4N35
400V,
pdfRFP4N40
TO-220AB
RFP4N40
2.000
mark
NOTE: When ordering, use the entire part number.
Ohm, NChannel
[
Power
/Page- Packaging
MOSMode
JEDEC TO-204AA
FETs)
/Use/Author
OutDRAIN
()
lines
(FLANGE)
/Key/DOCwords
VIEW
(Harris
pdfSemimark
conducSOURCE (PIN 2)
tor, NGATE (PIN 1)
Channel
Power
MOSFETs,
TO204AA,
TO220AB)
/Creator
()
1
October 1998
File Number 1491.3
Features
• 4A, 350V and 400V
• rDS(ON) = 2.000Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
RFM4N35, RFM4N40, RFP4N35, RFP4N40
TC = 25oC Unless Otherwise Specified
RFM4N35
350
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . VDGR
350
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
4
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
8
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
75
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ , TSTG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .Tpkg
260
Absolute Maximum Ratings
RFM4N40
400
400
4
8
±20
75
0.6
-55 to 150
RFP4N35
350
350
4
8
±20
60
0.48
-55 to 150
RFP4N40
400
400
4
8
±20
60
0.48
-55 to 150
UNITS
V
V
A
A
V
W
W/oC
oC
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
RFM4N40, RFP4N40
400
-
-
V
RFM4N35, RFP4N35
350
-
-
V
VGS = VDS , ID = 250µA (Figure 8)
2
-
4
V
VDS = Rated BVDSS
-
-
1
µA
VDS = 0.8 x Rated BVDSS , TC = 125oC
-
-
25
µA
VGS = ±20V, VDS = 0
-
-
±100
nA
Drain to Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(TH)
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
TEST CONDITIONS
ID = 250µA, VGS = 0
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 4A, VGS = 10V (Figures 6, 7)
-
-
2.000
Ω
Drain to Source On-Voltage (Note 2)
VDS(ON)
ID = 4A, VGS = 10V
-
-
8
V
VDD = 200V, ID = 2A, RG = 50Ω
RL = 100Ω, VGS = 10V
(Figures 10, 11, 12)
-
12
45
ns
-
42
60
ns
tD(OFF)
-
130
200
ns
tf
-
62
100
ns
-
-
750
pF
-
-
150
pF
-
-
100
pF
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
Fall Time
Input Capacitance
CISS
Output Capacitance
COSS
Reverse-Transfer Capacitance
CRSS
RθJC
Thermal Resistance Junction to Case
VDS = 25V,
VGS = 0V
f = 1MHz (Figure 9)
RFM4N35, RFM4N40
-
-
1.67
oC/W
RFP4N35, RFP4N40
-
-
2.083
oC/W
MIN
TYP
MAX
UNITS
ISD = 2A
-
-
1.4
V
ISD = 4A, dISD/dt = 100A/µs
-
800
-
ns
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Diode Voltage (Note 2)
Reverse Recorvery Time
VSD
trr
TEST CONDITIONS
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
5
1.0
4
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
RFM4N35, RFM4N40
3
RFP4N35, RFP4N40
2
1
0.2
0
0
50
100
0
25
150
50
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
TC = 25OC
TJ = MAX RATED
TC = 25oC
80µs PULSE TEST
DUTY CYCLE ≤ 2%
7
RFM4N35, 40
RFP4N35, 40
1
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
ID , DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
10
75
100
125
TC, CASE TEMPERATURE (oC)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
RFM4N35, RFP4N35
RFM4N40, RFP4N40
6
VGS = 8 - 10V
VGS = 7V
VGS = 20 V
VGS = 6V
5
4
3
VGS = 5V
2
1
VGS = 4V
0.1
1
10
100
VDS , DRAIN TO SOURCE VOLTAGE
1000
0
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
8
rDS(ON) , DRAIN TO SOURCE
ON RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
4
6
5
4
3
2
TC = -40oC
TC = 125oC
25
FIGURE 4. SATURATION CHARACTERISTICS
VDS = 20V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
7
5
10
15
20
VDS , DRAIN TO SOURCE VOLTAGE (V)
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
TC = 125oC
3
TC = 25oC
2
TC = -40oC
1
1
0
0
0
2
4
6
8
VGS , GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
3
10
0
1
2
3
4
5
6
7
8
9
10
ID , DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
(Continued)
1.5
ID = 4A
VGS = 10V
VDS = 10V
ID = 250µA
1.5
NORMALIZED GATE
THRESHOLD VOLTAGE
1
0.5
0
-50
0
50
100
150
1
0.5
0
-50
200
TJ , JUNCTION TEMPERATURE (oC)
50
125
150
175
TJ, JUNCTION TEMPERATURE (0C)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
10
500
VDS, DRAIN TO SOURCE VOLTAGE (V)
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
700
C, CAPACITANCE (pF)
0
600
500
CISS
400
300
200
COSS
100
CRSS
375
250
10
20
30
40
8
6
4
2
DRAIN SOURCE VOLTAGE
0
IG(REF)
20
50
VDS , DRAIN TO SOURCE (V)
GATE
TO
VDD = BVDSS
SOURCE
VOLTAGE
RL=100Ω
IG(REF) = 0.45mA
VGS = 10V
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
125
0
0
VDD = BVDSS
t, TIME (µs)
IG(ACT)
0
IG(REF)
80
VGS, GATE TO SOURCE VOLTAGE (V)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2
IG(ACT)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
tON
tOFF
td(ON)
td(OFF)
tf
tr
VDS
RL
90%
90%
+
RG
-
VDD
10%
10%
0
90%
DUT
VGS
VGS
0
FIGURE 11. SWITCHING TIME TEST CIRCUIT
4
10%
50%
50%
PULSE WIDTH
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS