RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs [[ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for applications such 35, as switching regulators, switching converters, motor drivers, /Subrelay drivers, and drivers for high power bipolar switching RFM4N ject () 40, /Autho transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated rRFP4N3 () circuits. 5, /KeyRFP4N4 Formerly developmental type TA17404. words 0) () Ordering Information /Subject /CrePART NUMBER PACKAGE BRAND (4A, ator () RFM4N35 TO-204AA RFM4N35 350V /DOCI RFM4N40 TO-204AA RFM4N40 and NFO RFP4N35 TO-220AB RFP4N35 400V, pdfRFP4N40 TO-220AB RFP4N40 2.000 mark NOTE: When ordering, use the entire part number. Ohm, NChannel [ Power /Page- Packaging MOSMode JEDEC TO-204AA FETs) /Use/Author OutDRAIN () lines (FLANGE) /Key/DOCwords VIEW (Harris pdfSemimark conducSOURCE (PIN 2) tor, NGATE (PIN 1) Channel Power MOSFETs, TO204AA, TO220AB) /Creator () 1 October 1998 File Number 1491.3 Features • 4A, 350V and 400V • rDS(ON) = 2.000Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM4N35, RFM4N40, RFP4N35, RFP4N40 TC = 25oC Unless Otherwise Specified RFM4N35 350 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . VDGR 350 Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 4 Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 8 Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ , TSTG -55 to 150 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . TL 300 Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .Tpkg 260 Absolute Maximum Ratings RFM4N40 400 400 4 8 ±20 75 0.6 -55 to 150 RFP4N35 350 350 4 8 ±20 60 0.48 -55 to 150 RFP4N40 400 400 4 8 ±20 60 0.48 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFM4N40, RFP4N40 400 - - V RFM4N35, RFP4N35 350 - - V VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V VDS = Rated BVDSS - - 1 µA VDS = 0.8 x Rated BVDSS , TC = 125oC - - 25 µA VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(TH) Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0 Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 10V (Figures 6, 7) - - 2.000 Ω Drain to Source On-Voltage (Note 2) VDS(ON) ID = 4A, VGS = 10V - - 8 V VDD = 200V, ID = 2A, RG = 50Ω RL = 100Ω, VGS = 10V (Figures 10, 11, 12) - 12 45 ns - 42 60 ns tD(OFF) - 130 200 ns tf - 62 100 ns - - 750 pF - - 150 pF - - 100 pF Turn-On Delay Time tD(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS RθJC Thermal Resistance Junction to Case VDS = 25V, VGS = 0V f = 1MHz (Figure 9) RFM4N35, RFM4N40 - - 1.67 oC/W RFP4N35, RFP4N40 - - 2.083 oC/W MIN TYP MAX UNITS ISD = 2A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 800 - ns Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Reverse Recorvery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 2 RFM4N35, RFM4N40, RFP4N35, RFP4N40 Typical Performance Curves 5 1.0 4 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 RFM4N35, RFM4N40 3 RFP4N35, RFP4N40 2 1 0.2 0 0 50 100 0 25 150 50 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE TC = 25OC TJ = MAX RATED TC = 25oC 80µs PULSE TEST DUTY CYCLE ≤ 2% 7 RFM4N35, 40 RFP4N35, 40 1 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 10 75 100 125 TC, CASE TEMPERATURE (oC) OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) RFM4N35, RFP4N35 RFM4N40, RFP4N40 6 VGS = 8 - 10V VGS = 7V VGS = 20 V VGS = 6V 5 4 3 VGS = 5V 2 1 VGS = 4V 0.1 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE 1000 0 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 8 rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) ID, DRAIN CURRENT (A) 4 6 5 4 3 2 TC = -40oC TC = 125oC 25 FIGURE 4. SATURATION CHARACTERISTICS VDS = 20V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 7 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 125oC 3 TC = 25oC 2 TC = -40oC 1 1 0 0 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 10 0 1 2 3 4 5 6 7 8 9 10 ID , DRAIN CURRENT (A) FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFM4N35, RFM4N40, RFP4N35, RFP4N40 Typical Performance Curves (Continued) 1.5 ID = 4A VGS = 10V VDS = 10V ID = 250µA 1.5 NORMALIZED GATE THRESHOLD VOLTAGE 1 0.5 0 -50 0 50 100 150 1 0.5 0 -50 200 TJ , JUNCTION TEMPERATURE (oC) 50 125 150 175 TJ, JUNCTION TEMPERATURE (0C) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10 500 VDS, DRAIN TO SOURCE VOLTAGE (V) 800 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 700 C, CAPACITANCE (pF) 0 600 500 CISS 400 300 200 COSS 100 CRSS 375 250 10 20 30 40 8 6 4 2 DRAIN SOURCE VOLTAGE 0 IG(REF) 20 50 VDS , DRAIN TO SOURCE (V) GATE TO VDD = BVDSS SOURCE VOLTAGE RL=100Ω IG(REF) = 0.45mA VGS = 10V 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 125 0 0 VDD = BVDSS t, TIME (µs) IG(ACT) 0 IG(REF) 80 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 4 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS