ROHM RQ1E075XN

Data Sheet
4V Drive Nch MOSFET
RQ1E075XN
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
(1) (2)
(3) (4)
Abbreviated symbol : XR
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RQ1E075XN
 Inner circuit
Taping
TCR
3000
○
(8)
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
VGSS
ID
IDP
IS
Pulsed
ISP
PD
Power dissipation
Channel temperature
Range of storage temperature
*1
*1
Limits
Unit
30
20
7.5
V
V
A
30
1.25
30
A
A
A
1.5
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
83.3
C / W
*2
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
(7)
(6)
(5)
(3)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*Mounted on a ceramic board.
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1/6
2011.04 - Rev.A
Data Sheet
RQ1E075XN
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
VGS (th)
1.0
-
2.5
V
-
12
17
ID=7.5A, VGS=10V
-
17
24
m ID=7.5A, VGS=4.5V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS (on)*
-
19
27
Forward transfer admittance
l Yfs l*
4.5
-
-
S
ID=7.5A, VDS=10V
Input capacitance
Ciss
-
440
-
pF
VDS=10V
Output capacitance
Coss
-
170
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
85
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
7
-
ns
ID=3.75A, VDD 15V
Rise time
tr *
td(off) *
-
25
-
ns
VGS=10V
-
35
-
ns
RL=4.0
tf *
-
7
-
ns
RG=10
Total gate charge
Qg *
-
6.8
-
nC
ID=7.5A, VDD 15
Gate-source charge
Qgs *
Qgd *
1.6
2.6
-
nC
nC
VGS=5V
Gate-drain charge
-
Turn-off delay time
Fall time
ID=7.5A, VGS=4.0V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=7.5A, VGS=0V
*Pulsed
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2/6
2011.04 - Rev.A
Data Sheet
RQ1E075XN
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ)
7
7
Ta=25°C
Pulsed
6
5
4
VGS= 3.0V
3
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
6
VGS= 10V
VGS= 4.5V
VGS= 4.0V
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
Fig.2 Typical Output Characteristics(Ⅱ)
VGS= 2.8V
VGS= 2.5V
2
1
5
VGS= 2.8V
4
VGS= 2.5V
3
2
1
VGS= 2.0V
VGS= 2.0V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
Fig.3 Typical Transfer Characteristics
8
10
100
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VDS= 10V
Pulsed
DRAIN CURRENT : ID[A]
6
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
Ta=25°C
Pulsed
10
.
VGS= 4.0V
VGS= 4.5V
VGS= 10V
1
0.001
GATE-SOURCE VOLTAGE : VGS[V]
1
10
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
0
1
2
0.01
3
100
0.1
100
100
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
4
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
VGS= 4.5V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.01
0.1
1
10
100
0.01
DRAIN-CURRENT : ID[A]
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0.1
1
10
100
DRAIN-CURRENT : ID[A]
3/6
2011.04 - Rev.A
Data Sheet
RQ1E075XN
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
100
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 4.0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.01
0.1
1
10
VDS= 10V
Pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
100
0.1
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
50
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
VGS=0V
Pulsed
SOURCE CURRENT : Is [A]
10
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
Ta=25°C
Pulsed
ID= 3.75A
40
ID= 7.5A
30
20
10
0
0
0.5
1
1.5
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : VGS[V]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.12 Dynamic Input Characteristics
Fig.11 Switching Characteristics
10
1000
tf
GATE-SOURCE VOLTAGE : VGS [V]
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
td(off)
SWITCHING TIME : t [ns]
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
100
td(on)
10
8
6
4
Ta=25°C
VDD= 15V
ID= 7.5A
RG=10Ω
Pulsed
2
tr
1
0
0.01
0.1
1
10
100
0
DRAIN-CURRENT : ID[A]
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2
4
6
8
10
12
14
16
TOTAL GATE CHARGE : Qg [nC]
4/6
2011.04 - Rev.A
Data Sheet
RQ1E075XN
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Aera
10000
1000
Operation in this area is limited by RDS(ON)
(VGS=10V)
Ciss
DRAIN CURRENT : ID (A)
CAPACITANCE : C [pF]
Ta=25°C
f=1MHz
VGS=0V
1000
Crss
100
Coss
100
10
PW =100us
PW =1ms
1
PW = 10ms
0.1
10
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
DC operation
0.01
0.01
0.1
1
10
100
0.1
DRAIN-SOURCE VOLTAGE : VDS[V]
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=83.3°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
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5/6
2011.04 - Rev.A
Data Sheet
RQ1E075XN
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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6/6
2011.04 - Rev.A
Notice
Notes
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R1120A