ROHM RXR035N03

Data Sheet
4V Drive Nch MOSFET
RXR035N03
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
TSMT3
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
(3)
(1)
(2)
Abbreviated symbol : XQ
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Code
Basic ordering unit (pieces)
RXR035N03
Taping
TCL
3000
○
Type
(3)
∗1
∗2
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
Drain current
Source current
(Body Diode)
3.5
A
12
0.8
A
A
Continuous
ID
Pulsed
Continuous
IDP
IS
*1
Pulsed
ISP
*1
12
A
PD
*2
1.0
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
125
C / W
Power dissipation
Channel temperature
Range of storage temperature
(1) Gate
(2) Source
(3) Drain
(1)
(2)
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.03 - Rev.A
Data Sheet
RXR035N03
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
IGSS
Drain-source breakdown voltage V(BR)DSS
Min.
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS (on)*
-
35
50
ID=3.5A, VGS=10V
-
45
65
m ID=3.5A, VGS=4.5V
-
50
70
ID=3.5A, VGS=4.0V
Forward transfer admittance
l Yfs l*
2.2
-
-
S
ID=3.5A, VDS=10V
Input capacitance
Ciss
-
180
-
pF
VDS=10V
Output capacitance
Coss
-
70
-
pF
VGS=0V
Zero gate voltage drain current
Reverse transfer capacitance
Crss
-
35
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
10
-
ns
ID=1.7A, VDD 15V
Rise time
tr *
td(off) *
-
25
-
ns
VGS=10V
-
25
-
ns
RL=8.8
tf *
-
7
-
ns
RG=10
Total gate charge
Qg *
-
3.3
-
nC
ID=3.5A
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
1.0
1.0
-
nC
nC
VDD 15V
VGS=5V
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
Conditions
V
Is=3.5A, VGS=0V
*Pulsed
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2/6
2011.03 - Rev.A
Data Sheet
RXR035N03
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
3.5
3
Ta=25℃
Pulsed
3
VGS= 10V
VGS= 2.5V
VGS= 10V
VGS= 4.5V
VGS= 4.0V
2
Ta=25℃
Pulsed
2.5
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
2.5
1.5
VGS= 2.5V
1
0.5
VGS= 4.5V
VGS= 4.0V
2
1.5
1
0.5
VGS= 2.0V
VGS= 2.0V
0
0
0
0.2
0.4
0.6
0.8
0
1
2
10
8
10
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VDS= 10V
Pulsed
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
DRAIN CURRENT : ID[A]
6
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.3 Typical Transfer Characteristics
0.1
0.01
Ta=25℃
Pulsed
VGS= 4.0V
VGS= 4.5V
VGS= 10V
100
.
10
0.001
0
1
2
0.01
3
0.1
1
10
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
1000
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
4
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
VGS= 4.5V
Pulsed
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
0.1
1
10
0.1
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© 2011 ROHM Co., Ltd. All rights reserved.
1
10
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
3/6
2011.03 - Rev.A
Data Sheet
RXR035N03
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 4.0V
Pulsed
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
0.1
1
VDS= 10V
Pulsed
1
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
10
0.1
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
VGS=0V
Pulsed
SOURCE CURRENT : Is [A]
10
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10
1
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
Ta=25℃
Pulsed
ID= 1.75A
80
ID= 3.5A
60
40
20
0
0
0.5
1
1.5
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : VGS[V]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10
10000
1000
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
tf
GATE-SOURCE VOLTAGE : VGS [V]
SWITCHING TIME : t [ns]
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
td(off)
100
10
8
6
4
Ta=25°C
VDD= 15V
ID= 3.5A
RG=10Ω
Pulsed
2
tr
td(on)
1
0
0.01
0.1
1
10
0
DRAIN-CURRENT : ID[A]
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© 2011 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
4/6
2011.03 - Rev.A
Data Sheet
RXR035N03
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
1000
100
Operation in this area is limited by RDS(on)
(VGS = 10V)
10
Drain Current : ID [ A ]
CAPACITANCE : C [pF]
Ciss
100
Crss
Coss
PW = 100μs
1
PW = 1ms
PW = 10ms
0.1
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Ta=25°C
f=1MHz
VGS=0V
10
DC Operation
0.01
0.01
0.1
1
10
DRAIN-SOURCE VOLTAGE : VDS[V]
100
0.1
1
10
100
Drain-Source Voltage : VDS [ V ]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Normalized Transient Thermal Resistance : r（t）
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=125°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.03 - Rev.A
Data Sheet
RXR035N03
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.03 - Rev.A
Notice
Notes
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R1120A