Si7454DP New Product Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 APPLICATIONS D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V, Full-/Half-Bridge DC/DC D Industrial and 42-V Automotive PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle v1%) L = 0.1 mH Continuous Source Current (Diode Conduction)a TA = 85_C Operating Junction and Storage Temperature Range 5.0 5.7 3.6 IDM 30 IAS 25 EAS IS TA = 25_C Maximum Power Dissipationa V 7.8 ID PD A 31 mJ 4.0 1.6 4.8 1.9 2.6 1.0 TJ, Tstg Unit A W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 21 26 55 65 1.6 2 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71618 S-03708—Rev. A, 14-May-01 www.vishay.com 1 Si7454DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 85_C 20 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea V nA m mA 30 A VGS = 10 V, ID = 7.8 A 0.028 0.034 VGS = 6.0 V, ID = 7.2 A 0.032 0.040 gfs VDS = 15 V, ID = 7.8 A 25 VSD IS = 4 A, VGS = 0 V 0.8 1.2 24 30 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.4 Gate Resistance RG 1.25 td(on) 16 30 tr 10 20 35 70 20 40 50 80 Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 50 V, VGS = 10 V, ID = 7.8 A VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 7.6 IF = 4 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 6 V 5V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 12 6 18 12 TC = 125_C 6 25_C –55_C 4V 0 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Document Number: 71618 S-03708—Rev. A, 14-May-01 Si7454DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2500 0.04 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.05 VGS = 6.0 V 0.03 VGS = 10 V 0.02 2000 Ciss 1500 1000 Crss 500 0.01 Coss 0.00 0 0 6 12 18 24 30 0 10 ID – Drain Current (A) Gate Charge 40 50 60 On-Resistance vs. Junction Temperature 2.4 VDS = 50 V ID = 7.8 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 30 VDS – Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 7.8 A 2.0 1.6 1.2 0.8 0 0 5 10 15 20 0.4 –50 25 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 r DS(on) – On-Resistance ( W ) 30 I S – Source Current (A) 20 TJ = 150_C 10 TJ = 25_C 0.05 ID = 7.8 A 0.04 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71618 S-03708—Rev. A, 14-May-01 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7454DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.5 100 80 ID = 250 mA Power (W) V GS(th) Variance (V) 0.0 –0.5 60 40 –1.0 20 –1.5 –50 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Document Number: 71618 S-03708—Rev. A, 14-May-01