Si9529DY Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) () ID (A) 0.03 @ VGS = 4.5 V 6 @ VGS = 2.5 V 5.2 0.05 @ VGS = –4.5 V 5 0.074 @ VGS = –2.5 V 4.1 D1 D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 Top View D2 D2 N-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 –12 Gate-Source Voltage VGS 8 8 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range 6 5 4.8 4.0 IDM 20 20 IS 1.7 –1.7 ID Unit V A 2.0 PD TJ, Tstg 1.3 –55 to 150 W C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Symbol N- or P- Channel Unit RthJA 62.5 C/W Notes a. Surface Mounted on FR4 Board, t 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70161. Siliconix S-49520—Rev. D, 18-Dec-96 1 Si9529DY Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currentb On-State Drain Source On-State Drain-Source On State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = VGS, ID = 250 mA N-Ch 0.6 VDS = VGS, ID = –250 mA P-Ch –0.6 V N-Ch "100 P-Ch "100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = 0 V V, VGS = "8 V VDS = –12 V, VGS = 0 V P-Ch –1 VDS = 20 V, VGS = 0 V, TJ = 55C N-Ch 5 VDS = –12 V, VGS = 0 V, TJ = 55C P-Ch –5 VDS w 5 V, VGS = 4.5 V N-Ch 20 VDS v –5 V, VGS = –4.5 V P-Ch –20 nA mA A VGS = 4.5 V, ID = 6 A N-Ch 0.023 0.03 VGS = –4.5 V, ID = –5 A P-Ch 0.039 0.05 VGS = 2.5 V, ID = 5.2 A N-Ch 0.028 VGS = –2.5 V, ID = –4.1 A P-Ch 0.051 0.074 VDS = 10 V, ID = 6 A N-Ch 24 VDS = –9 V, ID = –5 A P-Ch 16 IS = 1.7 A, VGS = 0 V N-Ch 0.75 1.2 IS = –1.7 A, VGS = 0 V P-Ch –0.75 –1.2 N-Ch 21 40 P-Ch 21 40 N-Ch 2.9 P-Ch 3 N-Ch 6.5 W S V Dynamica Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 6 A Gate Source Charge Gate-Source Qgs P-Channel VDS = –6 6V V, VGS = –4.5 4 5 V, V ID = –5A 5A Gate Drain Charge Gate-Drain Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source Drain Reverse Recovery Time Source-Drain Qgdd P-Ch 6 N-Ch 30 60 P-Ch 20 40 N-Ch 70 140 P-Ch 40 80 N-Ch 70 140 P-Ch 100 200 N-Ch 30 60 P-Ch 60 120 IF = 1.7 A, di/dt = 100 A/ms N-Ch 70 100 IF = –1.7 A, di/dt = 100 A/ms P-Ch 67 100 td(on) d( ) tr N-Channel N Ch l VDD = 10 V,, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) d( ff) P-Channel VDD = –10 10 V, V RL = 10 W ID ^ –11 A, VGEN = –4.5 4.5 V, RG = 6 W tf trr nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. 2 Siliconix S-49520—Rev. D, 18-Dec-96 Si9529DY Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics 20 N-Channel Transfer Characteristics 20 VGS = 4.5, 4, 3.5, 3, 2.5 V 2V 16 I D – Drain Current (A) I D – Drain Current (A) 15 12 8 4 10 TC = 125C 5 1.5 V 25C –55C 1.0 V 0 0 0 1 2 3 4 5 0 VDS – Drain-to-Source Voltage (V) 2.0 2.5 3.0 2500 0.04 C – Capacitance (pF) rDS(on) – On-Resistance ( ) 1.5 Capacitance 3000 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 0.01 2000 1500 Ciss 1000 Coss 500 0 Crss 0 0 5 10 15 20 0 Gate Charge 5 1.8 VDS = 10 V ID = 6 A 1.6 rDS(on) – On-Resistance ( ) (Normalized) 4 3 2 1 0 0 5 10 15 20 Qg – Total Gate Charge (nC) Siliconix S-49520—Rev. D, 18-Dec-96 2 4 6 8 10 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) VGS – Gate-to-Source Voltage (V) 1.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 0.5 25 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6 A 1.4 1.2 1.0 0.8 0.6 –50 0 50 100 150 TJ – Junction Temperature (C) 3 Si9529DY Typical Characteristics (25C Unless Otherwise Noted) Source-Drain Diode Forward Voltage rDS(on) – On-Resistance ( W ) TJ = 150C I S – Source Current (A) On-Resistance vs. Gate-to-Source Voltage 0.10 20 10 N-Channel 0.08 0.06 0.04 ID = A 0.02 TJ = 25C 0 1 0.2 0.6 0.4 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 6 8 Single Pulse Power 30 ID = 250 mA 0.2 24 –0.0 Power (W) VGS(th) Variance (V) 4 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 2 –0.2 –0.4 18 12 6 –0.6 –0.8 –50 0 50 100 0 0.01 150 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-49520—Rev. D, 18-Dec-96 Si9529DY Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics 20 P-Channel Transfer Characteristics 20 2.5 V VGS = 5, 4.5, 4, 3.5, 3 V 16 I D – Drain Current (A) I D – Drain Current (A) 15 12 8 2V 4 1V 10 5 TC = 125C 1.5 V 25C 0 0 1 2 3 4 5 0 VDS – Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 Capacitance 3000 2500 0.08 C – Capacitance (pF) rDS(on) – On-Resistance ( ) 0.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 VGS = 2.5 V 0.06 VGS = 4.5 V 0.04 0.02 2000 Ciss 1500 Coss 1000 Crss 500 0 0 0 5 10 15 20 0 Gate Charge 5 1.8 VDS = 6 V ID = 5 A 1.6 rDS(on) – On-Resistance ( ) (Normalized) 4 3 2 1 0 0 5 10 15 20 Qg – Total Gate Charge (nC) Siliconix S-49520—Rev. D, 18-Dec-96 2 4 6 8 10 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) VGS – Gate-to-Source Voltage (V) –55C 0 25 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5 A 1.4 1.2 1.0 0.8 0.6 –50 0 50 100 150 TJ – Junction Temperature (C) 5 Si9529DY Typical Characteristics (25C Unless Otherwise Noted) Source-Drain Diode Forward Voltage rDS(on) – On-Resistance ( W ) I S – Source Current (A) 10 On-Resistance vs. Gate-to-Source Voltage 0.10 20 TJ = 150C P-Channel 0.08 0.06 ID = 5 A 0.04 0.02 TJ = 25C 0 1 0.4 0.8 0.6 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 6 8 Single Pulse Power 30 0.4 24 ID = 250 mA 0.2 Power (W) VGS(th) Variance (V) 4 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 2 –0.0 –0.2 18 12 6 –0.4 –0.6 –50 0 50 100 0 0.01 150 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) 6 Siliconix S-49520—Rev. D, 18-Dec-96 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.