SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7* 1$2 + . 5 ;2 7* /;2 + D22 + /;22 + 622 + .9 ' D2 CCC E /62 /16 7* . ' D2CCCE /16 7* 1622 &*<51%&* =8 ** 5 $22 ? =8 @ 12 ? *8 A /122 &( .9 5 /62 7* &(< &(<51%&( SKM 200GB123D &( 5 /2 ? C SKM 200GAL123D Freewheeling Diode SKM 200GAR123D &( .9 5 /62 7* &(< &(<51%&( &( 5 /2 ? C Features .9 5 /16 7* Inverse Diode IGBT Modules ! " # $ % & ' # ( ) # *+ & " ,*- , * - . /0 12 .9 5 /62 7* Module &< +* / C . 5 16 7* # Characteristics Symbol Conditions IGBT =8 =8 5 *8 &* 5 $ + &*8 =8 5 2 *8 5 *8 *82 *8 Typical Applications +* 34 =8 5 /6 .9 5 16 7* max. Units D6 66 $6 2/ 20 + /D /$ .9 5 /16 7* /$ /; .9 5 167* F00 G00 H .9 5 /167* /2 /1$$ H &* 5 /62 + =8 5 /6 .9 5 7* C 16 0 * * *8 5 16 =8 5 2 /2 /6 /0 1 ( ( 2; /1 ( J= =8 5 '; ' E12 <= .9 5 7* <= 5 6$ H <=## 5 6$ H 8## <9' 1 typ. *8 8 ## # GAL min. .9 5 16 7* # 5 / !I * GB Units . 5 16 7* &*< SEMITRANS® 3 Values ** 5 $22 &*5 /62+ .9 5 /16 7* =8 5 '/6 /622 * 16 K 112 /22 1D $22 F2 D22 122 ;22 /22 /F &=-. L L 22G MNO GAR 13-01-2009 NOS © by SEMIKRON SKM 200GB123D Characteristics Symbol Conditions Inverse Diode ( 5 8* &( 5 /62 +? =8 5 2 (2 min. typ. max. Units .9 5 16 7* C 1 16 .9 5 /16 7* C /; .9 5 16 7* // /1 .9 5 /16 7* ( .9 5 16 7* $ ;F .9 5 /16 7* ® SEMITRANS 3 IGBT Modules &<< J &( 5 /62 + N 5 /622 +NB 8 =8 5 '/6 ? 5 $22 <9', H H .9 5 /16 7* G2 ; + B* $$ L 216 MNO 16 Freewheeling Diode ( 5 8* SKM 200GB123D &( 5 122 +? =8 5 2 (2 SKM 200GAL123D .9 5 16 7* C 1 .9 5 /16 7* C /; .9 5 16 7* // /1 D6 $6 .9 5 /16 7* SKM 200GAR123D ( .9 5 16 7* .9 5 /16 7* Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . /0 12 Typical Applications +* 34 GB 2 GAL &<< J &( 5 122 + N 5 1222 +NB 8 =8 5 2 ? ** 5 $22 <9'(, .9 5 /16 7* /12 // + B* L 2/; MNO Module *8 <**PE88P /6 C ' <' Q $ $ D 12 ! .5 16 7* 206 H .5 /16 7* 26 H 220; MNO 0 6 16 6 016 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GAR 13-01-2009 NOS © by SEMIKRON SKM 200GB123D Zth Symbol Zth(j-c)l Conditions Values Units < < < < 5/ 51 50 5D 5/ 51 50 6G 10 $; /1 220 222;F 2221 QNO QNO QNO QNO 5D 22221 SKM 200GAL123D < < < < 5/ 51 50 5D 5/ 51 50 /F2 $$ /1 1 220D; 222F1 22FF QNO QNO QNO QNO SKM 200GAR123D 5D 22221 SEMITRANS® 3 Zth(j-c)D IGBT Modules SKM 200GB123D Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . /0 12 Typical Applications +* 34 GB 3 GAL GAR 13-01-2009 NOS © by SEMIKRON SKM 200GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 13-01-2009 NOS © by SEMIKRON SKM 200GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 13-01-2009 NOS © by SEMIKRON SKM 200GB123D UL Recognized File 63 532 * , 6$ * , 6$ 6 =- * , 6F 6$ 13-01-2009 NOS =+ * , 6; 6$ =+< © by SEMIKRON