SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. B L M A FEATURES C N Low on-resistance Simple Drive Requirement Fast switching J H REF. A B C D E F G MARKING 4435SC D = Date Code PACKAGE INFORMATION K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D Package MPQ LeaderSize S D SOP-8 3K 13’ inch S D G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TA = 25°C Continuous Drain Current 3 TA = 70°C Pulsed Drain Current 1.2 Power Dissipation Maximum Junction to Ambient 3 ID http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. B -6 A IDM -50 A PD 2.5 W RθJA 50 °C / W 0.02 W / °C -55~150 °C Linear Derating Factor Operating Junction & Storage Temperature Range -8 TJ, TSTG Any changes of specification will not be informed individually. Page 1 of 4 SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BVDSS -30 - - V △BVDS/△Tj - -0.037 - V / °C VGS(th) -1 - -3 V VDS=VGS, ID= -250μA Forward Transfer Conductance Gfs - 20 - S VDS= -10V, ID= -8A Gate-Body Leakage IGSS - - ±100 nA VGS=±20V - - -1 μA VDS= -30V, VGS=0 - - -5 μA VDS= -24V, VGS=0 - - 20 - - 35 Qg - 12.4 - Qgs - 3.4 - Qgd - 5.1 - Td(on) - 24.2 - Tr - 23.8 - Td(off) - 58.2 - Tf - 9 - Input Capacitance Ciss - 1345 - Output Capacitance Coss - 194 - Reverse Transfer Capacitance Crss - 158 - Breakdown Voltage Temp. Coefficient Gate-Threshold Voltage Zero Gate Voltage Drain Current TA = 25°C TA = 70°C Drain-Source On-Resistance 2 Total Gate Charge 2 Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time 2 Rise Time Turn-Off Delay Time Fall Time IDSS RDS(ON) mΩ VGS=0, ID=-250μA Reference to 25°C, ID= -1mA VGS= -10V, ID= -8A VGS= -4.5V, ID= -5A nC ID= -12A VDS= -20V VGS= -4.5V nS VDS= -15V ID= -1A VGS= -10V RG=3.3Ω pF VGS=0 VDS= -15V f=1.0MHz Source-Drain Diode Forward On Voltage 2 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) VDS - -0.75 -1.2 V IS= -2.1A, VGS=0, Tj=25°C Is - - -2.1 A VD=VG=0V, VS= -1.2V ISM - - -50 A Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300us, duty cycle≦2%. 2 3 Surface mounted on 1 in copper pad of FR4 board; 125°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4435 Elektronische Bauelemente -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4435 Elektronische Bauelemente -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4