STD8NS25 N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA ■ ■ ■ TYPE VDSS RDS(on) ID STD8NS25 250 V < 0.45 Ω 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 250 V Drain-gate Voltage (RGS = 20 kΩ) 250 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 8 A ID Drain Current (continuos) at TC = 100°C 5 A Drain Current (pulsed) 32 A IDM (●) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Tj Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area July 2001 80 W 0.64 W/°C 5 V/ns 209 mJ –65 to 150 °C 150 °C (1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX (2) Starting T j = 25°C, IAR = 50A, V DD=20 V 1/6 STD8NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 8 A 300 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V V(BR)DSS Min. Typ. Max. 250 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4 A Min. Typ. Max. Unit 2 3 4 V 0.38 0.45 Ω Min. Typ. Max. Unit 7 8 S DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 4A VDS = 25V, f = 1 MHz, VGS = 0 Ciss Input Capacitance 770 pF Coss Output Capacitance 118 pF Crss Reverse Transfer Capacitance 48 pF STD8NS25 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 125 V, ID = 4 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 8 A, VGS = 10V Typ. Max. Unit 13 ns 18 ns 37 50 nC 5.2 nC 14.8 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(Voff) tf Turn-off- Delay Time Fall Time VDD = 125V, ID = 4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 51 16 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 200V, ID = 8 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 12.5 12.5 28 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 8 A ISDM (2) Source-drain Current (pulsed) 32 A VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 1.7 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 8 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 198 ns 1.1 µC 11.3 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STD8NS25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STD8NS25 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 5/6 STD8NS25 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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