STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH™ IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE(sat) IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH VOLTAGE CLAMPING FEATURES DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping. 3 3 2 1 DPAK 1 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER ■ INRUSH CURRENT LIMITATION ■ PRE-HEATING FOR ELECTRONIC LAMP BALLAST ■ Table 2: Order Code PART NUMBER MARKING PACKAGE PACKAGING STGD5NB120SZT4 GD5NB120SZ DPAK TAPE & REEL STGD5NB120SZ-1 GD5NB120SZ IPAK TUBE Rev. 2 January 2005 1/13 STGD5NB120SZ-1 - STGD5NB120SZ Table 3: Absolute Maximum ratings Symbol Parameter Value Unit 1200 V VCES Collector-Emitter Voltage (VGS = 0) VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C 10 A IC Collector Current (continuous) at TC = 100°C 5 A Collector Current (pulsed) 20 A ICM () PTOT Total Dissipation at TC = 25°C Derating Factor Eas (1) Tstg Tj Single Pulse Avalanche Energy at Tj = 25°C Single Pulse Avalanche Energy at Tj = 100°C Storage Temperature Operating Junction Temperature range 55 W 0.44 W/°C 10 7 mJ mJ –55 to 150 °C 150 °C () Pulse width limited by safe operating area (1) VCE = 50 V , IAV = 3.3 A Table 4: Thermal Data Min. Typ. Max. Rthj-case Thermal Resistance Junction-case 2.27 °C/W Rthj-amb Thermal Resistance Junction-ambient 100 °C/W Max. Unit ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol Parameter VBR(CES) Collector-Emitter Breakdown Voltage IC = 10 mA, VGE = 0 V ICES Collector cut-off Current (VGE = 0) VCE = 900 V VCE = 900 V, Tj = 125 °C 50 250 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ±20V , VCE = 0 V ±100 nA Gate Threshold Voltage VCE = VGE, IC = 250 µA 5 V Gate Emitter Voltage VCE =2.5 V, IC = 2 A, Tj = 25÷125°C 6.5 V Collector-Emitter Saturation Voltage VGE = 15V, IC = 5 A VGE = 15V, IC = 5 A, Tj =125°C 2.0 V V VGE(th) VGE VCE(sat) 2/13 Test Conditions Min. Typ. 1200 V 2 1.3 1.2 STGD5NB120SZ-1 - STGD5NB120SZ ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol Parameter Test Conditions Forward Transconductance VCE = 25 V , IC = 5 A Cies(*) Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0V Coes(*) Output Capacitance Cres(*) Rg gfs Min. Typ. Max. Unit 5 S 430 pF 40 pF Reverse Transfer Capacitance 7 pF Gate Resistance 4 KΩ (1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5% Table 7: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Delay Time Current Rise Time Turn-on Current Slope IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1KΩ Tj = 25°C 690 170 39.6 ns ns A/µs td(on) tr (di/dt)on Dealy Time Current Rise Time Turn-on Current Slope ICC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1KΩ Tj = 125°C 600 185 39 ns ns A/µs Table 8: Switching Off Symbol Parameter Test Conditions Min. Typ. Max. Unit tc tr(Voff) td(off) tf Cross-over Time Off Voltage Rise Time Delay Time Current Fall Time IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1KΩ Tj = 25°C 4 2.2 12.1 1.13 µs µs µs µs tc tr(Voff) td(off) tf Cross-over Time Off Voltage Rise Time Delay Time Current Fall Time IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1KΩ Tj = 125°C 5 2.2 12.1 2 µs µs µs µs Table 9: Switching Energy Symbol Parameterr Test Conditions Min. Typ. Max Unit Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 25°C (see Figure 18) 2.59 9 11.59 mJ mJ mJ Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 18) 2.64 10.2 12.68 mJ mJ mJ (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. (3) Turn-off losses include also the tail of the collector current. 3/13 STGD5NB120SZ-1 - STGD5NB120SZ Table 10: Functional Test Symbol Parameterr Ias Unclamped inductive switching current VCC = 50 V, L= 1.8 mH Tstart = 25°C, Rdrive = 1KΩ ICL Latching Current VCLAMP = 960 V, Tj =125°C Rdrive = 1KΩ 4/13 Test Conditions Min. Typ. 3.3 Max Unit A 10 A STGD5NB120SZ-1 - STGD5NB120SZ Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 5/13 STGD5NB120SZ-1 - STGD5NB120SZ Figure 9: Gate Threshold vs Temperature Figure 12: Breakdown Voltage vs Temperature Figure 10: Capacitance Variations Figure 13: Gate-Charge vs Gate-Emitter Voltage Figure 11: Switching Losses vs Gate Resistance Figure 14: Switching Losses vs Collector Current 6/13 STGD5NB120SZ-1 - STGD5NB120SZ Figure 15: Thermal Impedance Figure 16: Turn-Off SOA 7/13 STGD5NB120SZ-1 - STGD5NB120SZ Figure 17: Test Circuit for Inductive Load Switching Figure 19: Gate Charge Test Circuit Figure 18: Switching Waveforms Figure 20: Diode Recovery Time Waveforms 8/13 STGD5NB120SZ-1 - STGD5NB120SZ TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 L4 V2 0.8 0.60 0 o 0.398 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 9/13 STGD5NB120SZ-1 - STGD5NB120SZ TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. A inch TYP. 2.2 MAX. MIN. 2.4 0.086 TYP. MAX. 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.260 E 6.4 6.6 0.252 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 10/13 STGD5NB120SZ-1 - STGD5NB120SZ DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. inch MAX. MIN. A0 6.8 7 0.267 0.275 10.4 10.6 0.409 0.417 D 1.5 12.1 0.476 1.6 0.059 0.063 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. B0 B1 inch MAX. 0.059 0.065 0.073 1.574 16.3 0.618 0.641 * on sales type 11/13 STGD5NB120SZ-1 - STGD5NB120SZ Table 11: Revision History Date Revision 06-Oct-2003 18-Jan-2005 1 2 12/13 Description of Changes First release Final datasheet STGD5NB120SZ-1 - STGD5NB120SZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 13/13