STTA3006P/PI STTA6006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 30A / 2 x 30A VRRM 600V trr (typ) 35ns VF (max) 1.5V FEATURES AND BENEFITS K2 A2 A2 K1 K1 A1 K2 A1 STTA6006TV1 SPECIFICTO”FREEWHEELMODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : ISOTOP & DOP3I Electrical insulation : 2500VRMS Capacitance < 12 pF (DOP3I) Capacitance < 45 pF (ISOTOP) STTA6006TV2 ISOTOPTM DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in boosterdiode applications in power factor control circuitries. Packaged either in ISOTOP, DOP3I or SOD93 these 600V devices are particularly intended for use on 240V domestic mains. K A A K K SOD93 STTA3006P DOP3I STTA3006PI ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM VRSM Repetitive peak reverse voltage Non repetitive peak reverse voltage 600 600 V V IF(RMS) RMS forward current 50 A 300 230 A A 150 °C -65 to 150 °C IFRM IFSM Tj T stg Repetitive peak forward current Surge non repetitive forward current tp=5µs F=5kHz square tp=10 ms sinusoidal Maximum operating junction temperature Storage temperature range TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 4C 1/9 STTA6006TV1/2/ STTA3006P/PI THERMAL AND POWER DATA (Per diode) Symbol Rth(j-c) Parameter Test conditions Junction to case thermal resistance ISOTOP Value Unit 1.4 0.75 °C/W Per diode Total DOP3I 1.8 SOD93 Rth(c) P1 Pmax Conduction power dissipation IF(AV) = 30A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) 1.2 ISOTOP Coupling 0.1 °C/W ISOTOP DOP3I Tc= 74°C Tc= 52°C 54 W SOD93 Tc= 85°C ISOTOP DOP3I Tc= 66°C Tc= 42°C 60 W SOD93 Tc= 78°C STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Vto rd Test pulses : Parameter Test conditions Forward voltage drop IF =30A Reverse leakage current Threshold voltage VR =0.8 × VRRM Ip < 3.IAV Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Typ Max Unit 1.25 1.75 1.5 V V 150 8 1.15 µA mA V 11 mΩ Max Unit 3 Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr IRM S factor 2/9 Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Min Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 400V dIF/dt = -240 A/µs dIF/dt = -500 A/µs IF =30A Tj = 125°C VR = 400V dIF/dt = -500 A/µs IF =30A Typ ns 35 65 A 19 20 0.40 STTA6006TV1/2 / STTA3006P/PI TURN-ON SWITCHING Symbol Parameter Forward recovery time t fr Test conditions Max Tj = 25°C IF =30A, dIF/dt = 240 A/µs measured at, 1.1 × VFmax Fig. 1: Conduction losses versus average current. Unit ns 600 V 12 Fig. 2: Forward voltage drop versus forward current. VFM(V) P1(W) 3.50 60 T MAXIMUM VALUES =0.1 3.00 50 =tp/T 2.50 tp 2.00 Tj=125 oC 30 =1 1.50 =0.5 20 1.00 = 0. 2 10 0 0 Typ Peak forward voltage Tj = 25°C IF =30A, dIF/dt = 240 A/µs VFp 40 Min 0.50 IF(av)(A) 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. IFM(A) 0.00 0.1 1 10 100 Fig. 4: Peak reverse recovery current versus dIF/dt. IRM(A) 45 40 35 90% CONFIDENCE Tj=125oC VR=400V IF=60A 30 25 I F= 30A 20 15 I F=15A 10 5 0 0 dIF/dt(A/ s) 100 200 300 400 500 600 700 800 900 1000 3/9 STTA6006TV1/2/ STTA3006P/PI Fig. 5: Reverse recovery time versus dIF/dt. Fig. 6: Softness factor (tb/ta) versus dIF/dt. trr(ns) 250 90% CONFIDENCE Tj=125 oC 225 VR= 400V 200 175 I F=60A 150 IF=30A 125 100 75 IF=15A 50 25 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 S factor 0.90 Typical values Tj=125 oC 0.85 0.80 IF<2xI F( av) 0.75 VR=400V 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 dIF/dt(A/ s) 0.20 0 100 200 300 400 500 600 700 800 900 1000 Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt. 3.25 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 VFP(V) 16 15 90% CONFIDENCE Tj=125 oC 14 IF=IF(av) 13 12 11 10 9 8 7 6 5 4 3 2 1 dIF/dt(A/ s) 0 0 100 200 300 400 S factor IRM Tj(oC) 25 50 75 100 125 150 Fig. 9: Forward recovery time versus dIF/dt. tfr(ns) 600 550 500 450 400 350 300 250 200 150 100 50 0 0 100 4/9 90% CONFIDENCE Tj=125oC VFr=1.1*VF max. IF =IF (av) dIF/dt(A/ s) 200 300 400 500 600 500 600 STTA6006TV1/2 / STTA3006P/PI APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any ”FREEWHEEL Mode” application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : ”FREEWHEEL” MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR t T F = 1/T = t/T LOAD 5/9 STTA6006TV1/2/ STTA3006P/PI APPLICATION DATA (Cont’d) Fig. B: STATIC CHARACTERISTICS Conduction losses : P1 = Vt0 . IF(AV) + Rd . IF2(RMS) I IF Rd VR V IR V tO VF Reverse losses : P2 = VR . IR . (1 - δ) Fig. C: TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL TRANSISTOR I VR × IRM 2 × ( 3 + 2 × S ) × F 6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F + 2 x dIF ⁄ dt P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t I RM P3 = dIR /dt VR × IRM 2 × S × F 6 x dIF ⁄ dt VR trr = ta + tb P3 and P5 are suitable for power MOSFET and IGBT S = tb / ta Fig. D: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 t VF V Fp VF 1.1V F 0 6/9 tfr t Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F STTA6006TV1/2 / STTA3006P/PI PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B C 7.8 0.75 8.20 0.307 0.85 0.030 0.323 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 E1 23.85 25.50 0.990 24.15 0.939 1.004 0.951 E2 24.80 0.976 G 14.90 G1 12.60 15.10 0.587 12.80 0.496 0.594 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P P1 4.00 4.00 4.30 0.157 4.40 0.157 0.69 0.173 S 30.10 30.30 1.185 1.193 Cooling method : by conduction (C) 7/9 STTA6006TV1/2/ STTA3006P/PI PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.70 C D 1.17 D1 E F 4.90 0.185 1.37 0.046 0.098 1.27 0.050 0.78 0.020 1.30 0.043 1.75 0.069 10.80 11.10 0.425 0.437 H 14.70 15.20 0.578 0.598 12.20 16.20 0.480 0.638 L3 8/9 0.031 0.051 G L L2 Cooling method : by conduction (C) Recommended torque value : 0.8 m.N Maximum torque value : 1m.N 0.054 2.50 0.50 1.10 F3 0.193 18.0 L5 L6 3.95 O 4.00 0.709 4.15 0.156 31.00 0.163 1.220 4.10 0.157 0.161 STTA6006TV1/2 / STTA3006P/PI PACKAGE MECHANICAL DATA DOP3I REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D E 0.5 2.7 0.7 2.9 0.020 0.106 0.028 0.114 F 15.8 16.5 0.622 0.650 G H 20.4 15.1 21.1 15.5 0.815 0.594 0.831 0.610 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 N 10.8 11.3 0.425 0.444 P R 1.20 1.40 4.60 typ. 0.047 0.055 0.181 typ. Cooling method : by conduction (C) Recommended torque value : 0.8 m.N Maximum torque value : 1m.N Ordering type Marking Package Weight Base qty Delivery mode STTA6006P STTA6006PI STTA6006P STTA6006PI SOD93 DOP3I 3.79g 4.52g 30 30 Tube Tube STTA6006TV1 STTA6006TV1 ISOTOP 10 Tube STTA6006TV2 ISOTOP 27g without screws 10 Tube STTA006TV2 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of thirdparties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9