STW11NK100Z STW12NK95Z N-channel 950V - 0.69Ω - 10A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features Type VDSS RDS(on) (@Tjmax) STW12NK95Z 950 V < 0.90Ω ■ Gate charge minimized ■ 100% avalanche tested ■ Extremely high dv/dt capability ID PW 10 A 230W TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STW12NK95Z W12NK95Z TO-247 Tube August 2006 Rev 2 1/14 www.st.com 14 Contents STW12NK95Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW12NK95Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 950 V Drain-gate voltage (RGS = 20KΩ) 950 V Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 10 A ID Drain current (continuous) at TC=100°C 6.3 A IDM(1) Drain current (pulsed) 40 A PTOT Total dissipation at TC = 25°C 230 W Derating Factor 1.85 W/°C Gate source ESD (HBM-C=100pF, R=1,5KΩ) 6000 V 4.5 V/ns -55 to 150 °C VESD (G-S) dv/dt (2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤10A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case Max Value Unit 0.54 °C/W Rthj-a Thermal resistance junction-ambient Max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 10 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 500 mJ 3/14 Electrical ratings Table 4. Symbol BVGSO 1.1 STW12NK95Z Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1mA (Open Drain) Min. Typ. 30 Max. Unit V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 STW12NK95Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125°C IGSS Gate body leakage current VGS = ± 20V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 100µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 5 A Table 6. Symbol Parameter Test conditions Forward transconductance VDS =15V, ID = 5A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Typ. Max. Unit 950 3 V 1 50 µA µA ±10 µA 3.75 4.5 V 0.69 0.9 Ω Typ. Max. Unit Dynamic gfs (1) Cosseq(2). Min. Min. 12 S VDS =25V, f=1 MHz, VGS=0 3500 280 58 pF pF pF Equivalent output capacitance VGS=0, VDS =0V to 760V 117 pF Total gate charge Gate-source charge Gate-drain charge VDD=760V, ID = 10A VGS =10V (see Figure 15) 113 19 60 152 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test conditions VDD=475V, ID=5A, RG=4.7Ω, VGS=10V (see Figure 14) VDD=475V, ID=5A, RG=4.7Ω, VGS=10V (see Figure 14) Min. Typ. Max. Unit 31 20 ns ns 88 55 ns ns 5/14 Electrical characteristics Table 8. Symbol ISD ISDM(1) VSD (2) trr Qrr IRRM trr Qrr IRRM STW12NK95Z Source drain diode Parameter Max Unit Source-drain current 10 A Source-drain current (pulsed) 40 A Min Typ. 1.6 V Forward on voltage ISD=8.3A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10, di/dt = 100A/µs, VDD=50V, Tj=25°C 728 78 21.6 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10A, di/dt = 100A/µs, VDD=50V, Tj=150°C 964 11 23 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/14 Test conditions STW12NK95Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 7/14 Electrical characteristics STW12NK95Z Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 8/14 Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature STW12NK95Z Electrical characteristics Figure 13. Maximum avalanche energy vs temperature 9/14 Test circuit 3 STW12NK95Z Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 10/14 Figure 19. Switching time waveform STW12NK95Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STW12NK95Z TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/14 TYP 5.50 0.216 STW12NK95Z 5 Revision history Revision history Table 9. Revision history Date Revision Changes 16-Jan-2006 1 Initial release. 01-Aug-2006 2 New template, no content change 13/14 STW12NK95Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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