TGS2351-SM DC – 6 GHz High Power SPDT Switch Applications High Power Switching QFN 4x4mm 24L Product Features Frequency Range: DC – 6 GHz Power Handling: up to 40 W Insertion Loss: < 1 dB Isolation: -40 dB typical Switching Speed: 50 ns Control Voltages: 0 V/-40 V Dimensions: 4.0 x 4.0 x 1.43 mm General Description The TriQuint TGS2351-SM is a Single-Pole, DoubleThrow (SPDT) Packaged Switch. The TGS2351-SM operates from DC to 6 GHz and is designed using TriQuint’s 0.25um GaN on SiC production process. The TGS2351-SM typically provides up to 40 W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss < 1 dB, and high isolation -40 dB typical. Functional Block Diagram 8 Vc2 J1 RF In 20 & 21 J2 RF Out1 10 & 11 J3 RF Out2 3&4 23 Vc1 Pin Configuration Pin # Symbol 1, 2, 5, 6, 7, 9, 12, 13, 18, 19, 22, 24, 25 3 and 4 8 10 and 11 14, 15, 16, 17 20 and 21 23 GND RF In Vc2 RF Out2 N/C RF Out1 Vc1 The TGS2351-SM is ideally suited for High Power Switching application. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. TGS2351-SM Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 13 - ECCN EAR99 Description DC – 6 GHz High Power SPDT Switch Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Control Voltage, Vc Control Current, Ic Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC RF Input Power, Hot Switching, 50% switching Duty Cycle Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature - 50 V -1 to 7.8 mA 10 W 47 dBm Vc1 Vc2 Ic1 / Ic2 40 dBm 275 oC Min Typical Max Units -40 / 0 0 / -40 -0.4 to 0.1 V V mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 260 oC -55 to 150 oC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vc1 = -40/0 V, Vc2 = 0/-40 V,see Function Table at Application Circuit on page 7 Parameter Min Operational Frequency Range Control Current (Ic1/ Ic2) Insertion Loss (On-State): DC to 5 GHz Insertion Loss (On-State): 6 GHz Input Return Loss – On-State (Common Port RL) Output Return Loss – On-State (Switched Port RL) Isolation (Off-State) Output Return Loss – Off-Sate (Isolated Port RL) Input Power 1/ Output Power @ Pin = 46dBm, 1-6GHz Insertion Loss Temperature Coefficient Output TOI @ Pin = 23 dBm Switching Speed – On 2/ Switching Speed – Off 2/ Typical DC -1 12 12 0.5 0.8 20 20 -40 2.5 46 45 -0.003 50 50 50 Max 6 0.1 1 1.2 -31 Units GHz mA dB dB dB dB dB dBm dBm dB/°C dBm ns ns 1/ The Input Power will be reduced if < 10 MHz. 2/ These Switching Speed dependent on Switch Driver circuit to deliver Vc = 0/-40 V. The rise and fall time of the Switch Driver which was used to perform for this data is 35 ns, as shown on page 6. For further technical information, see GaN SPDT Switch Drivers Application Note Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 2 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θJC, measured to back of package Tbase = 85 °C Tbase = 85 °C, Vc1 = 0 V, Vc2 = -40 V, Pin = 40 W, Pdiss = 5.3 W θJC = 6.1 °C/W Tch = 118 °C Tm = 1.4 E+9 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm (Hours) 1.E+15 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET7 1.E+04 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, Tch (°C) Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 3 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Typical Performance Isolation (Off-State) vs. Frequency Insertion Loss (On-State) vs. Frequency Vc1 = 0 V, Vc2 = -40 V, +25 0C 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 Isolation (dB) Insertion Loss (dB) Vc1 = -40 V, Vc2 = 0 V, +25 0C 0 1 2 3 4 5 6 7 8 9 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 0 10 1 2 3 Frequency (GHz) Return Loss (On-State) vs. Frequency IRL ORL 2 3 4 5 6 7 8 9 ORL 1 2 3 4 5 6 7 8 9 10 Vc1 = -40 V, Vc2 = 0 V, +25 0C 0.1 Loss Compression (dB) Loss Compression (dB) 10 Loss Compression vs. Pin vs. Frequency 0C 0.0 -0.1 100 MHz 300 MHz 500 MHz 700 MHz 900 MHz -0.4 9 Frequency (GHz) 0.1 -0.3 8 IRL 0 10 Loss Compression vs. Pin vs. Frequency -0.2 7 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 Frequency (GHz) Vc1 = -40 V, Vc2 = 0 V, +25 6 Vc1 = 0 V, Vc2 = -40 V, +25 0C Off-State Return Loss (dBm) On-State Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 1 5 Return Loss (Off-State) vs. Frequency Vc1 = -40 V, Vc2 = 0 V, +25 0C 0 4 Frequency (GHz) 0.0 -0.1 -0.2 1 GHz 2 GHz 3 GHz 4 GHz -0.3 -0.4 -0.5 -0.5 34 36 Data Sheet: Rev A 38 40 42 Input Power (dBm) 06/20/12 © 2012 TriQuint Semiconductor, Inc. 44 34 46 36 38 40 42 44 46 Input Power (dBm) - 4 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Typical Performance (cont.) Control Current vs. Pin Insertion Loss (On-State) vs. Freq vs. Vc Vc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz, +25 0C Vc2 = 0 V, +25 0C 0.04 Insertion Loss (dB) Control Current, Ic (mA) 0.05 0.03 0.02 0.01 0.00 34 36 38 40 42 44 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 Vc1 = -40 V Vc1 = -30 V Vc1 = -20 V 46 0 1 2 Input Power (dBm) 5 6 7 8 9 10 Loss Compression vs. Pin vs. Vc Vc2 = 0 V, Frequency = 3 GHz, +25 0C Vc1 = 0 V, +25 0C 1 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 Loss Compression (dB) Isolation (dB) 4 Frequency (GHz) Isolation (Off-State) vs. Freq vs. Vc Vc2 = -40 V Vc2 = -30 V Vc2 = -20 V 0 -1 -2 Vc1 = -40 V Vc1 = -30 V Vc1 = -20 V -3 -4 -5 1 2 3 4 5 6 7 8 9 10 34 36 38 Insertion (On-State) vs. Freq vs. Temp 1 2 Isolation (dB) 3 4 5 6 7 8 9 10 Data Sheet: Rev A 06/20/12 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 46 -55 C +25 C +85 C 1 Frequency (GHz) © 2012 TriQuint Semiconductor, Inc. 44 Vc1 = 0 V, Vc2 = -40 V -55 C +25 C +85 C 0 42 Isolation (Off-State) vs. Freq vs. Temp Vc1 = -40 V, Vc2 = 0 V 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 40 Input Power (dBm) Frequency (GHz) Insertion Loss (dB) 3 2 3 4 5 6 7 8 9 10 Frequency (GHz) - 5 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Typical Performance (cont.) Loss Compression vs. Pin vs. Temp TOI vs. Frequency Vc1 = 0 V, Vc2 = -40 V, Pin = 23dBm, f = 10 MHz, +25 0C 70 0.0 65 60 -0.1 TOI (dBm) Loss Compression (dB) Vc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz 0.1 -0.2 -55 C +25 V +85 C -0.3 -0.4 55 50 45 40 TOI measurements above 60 dBm are limited by the test set 35 -0.5 30 34 36 38 40 42 44 46 1 Input Power (dBm) Switching Speed – On 50 ns Data Sheet: Rev A 06/20/12 3 4 5 6 7 8 Frequency (GHz) Switching Speed - Off 50 ns Vc = 0/-40 V, Freq = 3 GHz, Pin = 30 dBm, +25 0C © 2012 TriQuint Semiconductor, Inc. 2 Vc = 0/-40 V, Freq = 3 GHz, Pin = 30 dBm, +25 0C - 6 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Application Circuit J2 RF Out1 Vc1 -40 V / 0 V 23 24 22 20 21 19 1 18 2 17 3 J1 RF In 16 TGS2351-SM 4 15 5 14 6 13 7 8 9 10 11 12 J3 RF Out2 Vc2 0 V / -40 V This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused RF Out port with a 50 Ohm load. Bias-up Procedure Bias-down Procedure Vc1 or Vc2 set to -40 V (see Function Table below for RF Path) Vc2 or Vc1 set to 0 V (see Function Table below for RF Path) Apply RF signal to RF Input Turn off RF supply Turn Vc1 or Vc2 to 0V Turn Vc2 or Vc1 to 0 V Function Table RF Path RF In to RF Out1 (50 Ohm load to RF Out2) RF In to RF Out2 (50 Ohm load to RF Out1) Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. State Vc1 Vc2 On-State (Insertion Loss) Off-State (Isolation) On-State (Insertion Loss) Off-State (Isolation) 0V -40 V -40 V 0V -40 V 0V 0V -40 V - 7 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch 19 , GND 20, RF Out1 21, RF Out1 22, GND 23, Vc1 PIN #1 IDENTIFICATION 24, GND Pin Description 1 , GND 18, GND 2 , GND 17 , N/C 3 , RF In 16 , N/C 25 Pin 1, 2, 5, 6, 7, 9, 12, 13, 18, 19, 22, and 24 3 and 4 Symbol Description GND No internal connection; must be grounded on PCB RF In Input, matched to 50 ohms, DC coupled Connected to GND paddle (pin 25) must be grounded on PCB to improve isolation Control voltage #2; see Application Circuit on page 7 as an example Output #2, matched to 50 ohms, DC coupled No internal connection; can be grounded or left open Output #1, matched to 50 ohms, DC coupled Control voltage #1; see Application Circuit on page 7 as an example Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 11 for suggested footprint. 9, 22 GND 8 10 and 11 14, 15, 16, and 17 20 and 21 23 Vc2 RF Out2 N/C RF Out1 Vc1 25 GND Data Sheet: Rev A 12 , GND 13 , GND 11 , RF Out2 6 , GND 10 , RF Out2 14 , N/C 9 , GND 5 , GND 8 , Vc2 15 , N/C 7 , GND 4 , RF In 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 8 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Applications Information PC Board Layout Top RF layer is 0.010” thick Rogers 4350, єr = 3.66. Metal layers are 0.5-oz copper. Microstrip 50 Ω line detail: width = 0.0217”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to the TGS2351-SM Product Information page. RF Out1 RF In RF Out2 Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 9 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Mechanical Information Package Information and Dimensions All dimensions are in millimeters. 2351 YYWW MXXX This package is lead-free/RoHS-compliant with a Aluminum Nitride base (AlN), and the plating material on the leads is Electroless Gold (Au) over Electroless nickel (Ni). It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes. The TGS2351-SM will be marked with the “2351” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “MXXX” is a supplier code and partial batch ID. Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 10 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Mechanical Information (cont.) Mounting Configuration All dimensions are in millimeters (inches). Notes: 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this device. Vias have a final plated thru diameter of .203 mm (.008”). .406 .406 Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 11 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Class 1B Passes 500 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating Level 1 at +260 °C convection reflow The part is rated Moisture Sensitivity Level TBD at 260°C per JEDEC standard IPC/JEDEC J-STD-020. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 12 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2351-SM DC – 6 GHz High Power SPDT Switch Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 06/20/12 © 2012 TriQuint Semiconductor, Inc. - 13 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®