ONSEMI TIP32BG

TIP31, TIP31A, TIP31B, TIP31C,
(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
Complementary Silicon
Plastic Power Transistors
http://onsemi.com
Designed for use in general purpose amplifier and switching
applications.
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
Features
• Collector−Emitter Saturation Voltage −
•
•
•
•
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32
= 60 Vdc (Min) − TIP31A, TIP32A
= 80 Vdc (Min) − TIP31B, TIP32B
= 100 Vdc (Min) − TIP31C, TIP32C
High Current Gain − Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO−220 AB Package
Pb−Free Packages are Available*
MARKING
DIAGRAM
4
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO
40
60
80
100
Vdc
40
60
80
100
Vdc
VEB
5.0
Vdc
IC
3.0
5.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
40
0.32
W
W/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
Unclamped Inductive Load Energy (Note 1)
Collector−Base Voltage
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Emitter−Base Voltage
Collector Current
Continuous
Peak
Operating and Storage Junction
Temperature Range
VCB
2.0
0.016
W
W/_C
E
32
mJ
TJ, Tstg
– 65 to
+ 150
_C
1
TO−220AB
CASE 221A
STYLE 1
2
TIP3xxG
AYWW
3
TIP3xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
= Year
= Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 10
1
Publication Order Number:
TIP31A/D
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
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THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Thermal Resistance, Junction−to−Case
RqJC
3.125
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
40
60
80
100
−
−
−
−
Vdc
ICEO
−
0.3
mAdc
−
0.3
−
−
−
−
200
200
200
200
IEBO
−
1.0
mAdc
hFE
25
10
−
50
−
VCE(sat)
−
1.2
Vdc
VBE(on)
−
1.8
Vdc
Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
−
MHz
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
TIP31, TIP32, TIP31A, TIP32A
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
TIP31B, TIP31C, TIP32B, TIP32C
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
mAdc
ICES
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
TIP31
Package
Shipping
TO−220
50 Units / Rail
TIP31G
TO−220
(Pb−Free)
50 Units / Rail
TIP31A
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TIP31AG
TIP31B
TIP31BG
TIP31C
TIP31CG
TIP32
TO−220
50 Units / Rail
TIP32G
TO−220
(Pb−Free)
50 Units / Rail
TIP32A
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TIP32AG
TIP32B
TIP32BG
TIP32C
TIP32CG
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2
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
PD, POWER DISSIPATION (WATTS)
TC TA
40 4.0
TC
30 3.0
20 2.0
TA
10 1.0
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
TURN−ON PULSE
APPROX
+11 V
2.0
RC
IC/IB = 10
TJ = 25°C
1.0
SCOPE
Vin
Vin 0
RB
t, TIME (ms)
VEB(off)
VCC
t1
t3
APPROX
+11 V
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
Vin
t2
TURN−OFF PULSE
−4.0 V
0.7
0.5
tr @ VCC = 30 V
0.3
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
DUTY CYCLE ≈ 2.0%
APPROX − 9.0 V
td @ VEB(off) = 2.0 V
0.05
0.1
0.3
0.5
1.0
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Equivalent Circuit
Figure 3. Turn−On Time
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3
3.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
ZqJC(t) = r(t) RqJC
RqJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5.0
100ms
5.0ms
2.0
1.0
0.5
0.2
0.1
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150_C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
SECONDARY BREAKDOWN
LIMITED @ TJ ≤ 150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED VCEO
TIP31C, TIP32C
1.0ms
10
20
50
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
t, TIME (s)
μ
1.0
0.7
0.5
0.3
0.2
ts′
tf @ VCC = 30 V
300
IB1 = IB2
IC/IB = 10
ts′ = ts − 1/8 tf
TJ = 25°C
TJ = +25°C
200
CAPACITANCE (pF)
3.0
2.0
tf @ VCC = 10 V
0.1
0.07
0.05
0.03
0.03
100
Ceb
70
50
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
30
0.1
3.0
Figure 6. Turn−Off Time
Ccb
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
20 30 40
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
hFE , DC CURRENT GAIN
300
100
70
50
TJ = 150°C
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
500
VCE = 2.0 V
25°C
−55 °C
30
10
7.0
5.0
0.03 0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
TJ = 25°C
1.6
IC = 0.3 A
1.2
0.4
0
1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (A)
μ
101
100
10−1
10−2
10
20
50
100 200
IB, BASE CURRENT (mA)
500 1000
+2.5
+2.0
*APPLIES FOR IC/IB ≤ hFE/2
TJ = −65°C TO +150°C
+1.5
+1.0
+0.5
*qVC FOR VCE(sat)
0
−0.5
−1.0
−1.5
qVB FOR VBE
−2.0
−2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
103
102
5.0
IC, COLLECTOR CURRENT (AMPS)
VCE = 30 V
TJ = 150°C
100°C
REVERSE
FORWARD
25°C
10−3
−0.4 −0.3 −0.2 −0.1
ICES
0
+0.1 +0.2
+0.3 +0.4 +0.5
+0.6
R BE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
V, VOLTAGE (VOLTS)
TJ = 25°C
0.6
2.0
Figure 9. Collector Saturation Region
1.4
0.8
3.0 A
0.8
Figure 8. DC Current Gain
1.2
1.0 A
2.0 3.0
107
VCE = 30 V
IC = 10 x ICES
106
IC ≈ ICES
105
104
IC = 2 x ICES
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
102
20
40
60
80
100
120
140
160
VBE, BASE−EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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5
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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TIP31A/D