Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 ■ Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 2 0.2±0.1 1 ■ Resistance by Part Number Marking symbol • UNR5225 FZ • UNR5226 FY • UNR5227 FW 0.9±0.1 3 • Low collector-emitter saturation voltage VCE(sat) , optimum for the muting circuit • The use with high current value is possible (0.65) (0.65) (R1) 10 kΩ 4.7 kΩ 6.8 kΩ (R2) 6.8 kΩ 1.3±0.1 2.0±0.2 10˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 600 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Internal Connection R1 C B R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 1 µA, IE = 0 30 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 hFE VCE = 5 V, IC = 50 mA Forward current transfer ratio UNR5227 UNR5225/5226 Collector-emitter saturation voltage Input resistance Conditions UNR5226 Min µA 1 µA 600 −30% 4.7 80 mV +30% kΩ 1.2 6.8 UNR5225 10 Resistance ratio UNR5227 R1/R2 * UNR5226 Ron 0.8 VI = 7 V, RL = 1 kΩ, f = 1 kHz UNR5227 1.0 0.95 Ω 1.1 UNR5225 Transition frequency 1 IC = 50 mA, IB = 2.5 mA R1 Unit V 100 VCE(sat) Max 70 UNR5227 ON resistance Typ 1.5 fT VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to Ron measurement circuit Publication date: January 2004 SJH00043BED 1 UNR5225/5226/5227 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Ron measurement circuit RL R1 f = 1 kHz V = 0.3 V R2 VI VB VV VA Ron = VB × RL (Ω) VA−VB Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR5225 VCE(sat) IC IB = 1.0 mA 300 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 0.2 mA 0.1 mA 0 0 2.5 5.0 7.5 10.0 Collector-emitter voltage VCE (V) 2 103 hFE IC 250 IC / IB = 10 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (mV) IC VCE 400 102 Ta = 75°C 10 25°C −25°C 1 1 10 Collector current IC (mA) SJH00043BED 102 VCE = 10 V 200 Ta = 75°C 150 25°C −25°C 100 50 0 1 10 102 103 Collector current IC (mA) 104 UNR5225/5226/5227 IO VIN 102 f = 1 MHz VIN IO 102 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 10 Input voltage VIN (V) 10 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 14 1 10 −1 5 10 1 10 −2 1 10 1 100 10 −3 0.25 Collector-base voltage VCB (V) 0.75 10 −1 10 −3 1.25 Input voltage VIN (V) 10 −2 10 −1 1 10 102 Output current IO (mA) Characteristics charts of UNR5226 VCE(sat) IC Collector current IC (mA) 400 IB = 1.0 mA 0.9 mA 300 0.8 mA 0.7 mA 0.6 mA 200 0.5 mA 0.4 mA 0.3 mA 100 0.2 mA 0.1 mA 0 0 2.5 5.0 7.5 500 Ta = 75°C 102 25°C −25°C 10 1 10.0 1 Collector-emitter voltage VCE (V) 10 400 Ta = 75°C 300 25°C −25°C 200 100 0 103 1 102 10 103 104 Collector current IC (mA) IO VIN 102 f = 1 MHz VIN IO 102 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 10 Input voltage VIN (V) 10 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 102 VCE = 10 V Collector current IC (mA) Cob VCB 14 hFE IC 103 I / I = 10 C B Forward current transfer ratio hFE VCE = 10 V Collector-emitter saturation voltage VCE(sat) (mV) IC VCE 500 1 10 −1 5 10 1 10 −2 1 1 10 Collector-base voltage VCB (V) 102 10 −3 0.25 0.75 1.25 Input voltage VIN (V) SJH00043BED 10 −1 10 −3 10 −2 10 −1 1 10 102 Output current IO (mA) 3 UNR5225/5226/5227 Characteristics charts of UNR5227 IB = 1.0 mA 300 0.9 mA 0.8 mA 0.7 mA 200 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 IC / IB = 10 102 Ta = 75°C 25°C 10 10 1 10 102 102 f = 1 MHz 25°C −25°C 100 0 103 1 102 10 103 104 Collector current IC (mA) VIN IO 102 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 10 16 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 200 IO VIN 12 1 10 −1 8 10 1 10 −2 4 1 10 Collector-base voltage VCB (V) 4 Ta = 75°C Collector current IC (mA) Cob VCB 0 VCE = 10 V −25°C Collector-emitter voltage VCE (V) 20 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C 103 Input voltage VIN (V) Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (mV) IC VCE 400 102 10 −3 0.25 0.75 1.25 Input voltage VIN (V) SJH00043BED 10 −1 10 −3 10 −2 10 −1 1 10 Output current IO (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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