DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1950 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 6 5 4 1 2 3 1.5 FEATURES 0.32 +0.1 –0.05 2.8 ±0.2 The µPA1950 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 130 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) RDS(on)2 = 176 mΩ MAX. (VGS = –3.0 V, ID = –1.5 A) RDS(on)3 = 205 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A) RDS(on)4 = 375 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A) 0.95 1.9 µPA1950TE 6: Drain1 1: Gate1 5: Source1 4: Drain2 3: Gate2 2: Source2 PACKAGE Note SC-95 (Mini Mold Thin Type) Note Marking: TM EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain 1 Drain to Source Voltage (VGS = 0 V) VDSS –12 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V ID(DC) m2.5 A Drain Current (DC) (TA = 25°C) Note1 ID(pulse) m7.0 A Total Power Dissipation (2unit) Note2 PT1 1.15 W Total Power Dissipation (1unit) Note2 PT2 0.57 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) 0.9 to 1.1 2.9 ±0.2 ORDERING INFORMATION PART NUMBER 0.65 0.95 Body Diode Gate 1 Gate Protection Diode Drain 2 Gate Protection Diode Source 1 Body Diode Gate 2 Source 2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15620EJ2V0DS00 (2nd edition) Date Published January 2002 NS CP(K) Printed in Japan © 2001 µ PA1950 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –12 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA –1.5 V Gate Cut-off Voltage VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance VDS = –10 V, ID = –1.0 mA –0.45 | yfs | VDS = –10 V, ID = –1.5 A 1.0 S RDS(on)1 VGS = –4.5 V, ID = –1.5 A 105 130 mΩ RDS(on)2 VGS = –3.0 V, ID = –1.5 A 135 176 mΩ RDS(on)3 VGS = –2.5 V, ID = –1.5 A 160 205 mΩ RDS(on)4 VGS = –1.8 V, ID = –1.0 A 225 375 mΩ Input Capacitance Ciss VDS = –10 V 220 pF Output Capacitance Coss VGS = 0 V 90 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 40 pF Turn-on Delay Time td(on) VDD = –6.0 V, ID = –1.5 A 15 ns VGS = –4.0 V 80 ns RG = 10 Ω 150 ns 120 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –10 V 1.9 nC Gate to Source Charge QGS VGS = –4.0 V 0.5 nC Gate to Drain Charge QGD ID = –2.5 A 0.7 nC IF = 2.5 A, VGS = 0 V 0.86 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. VDS(−) 90% VGS(−) 0 τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton IG = −2 mA RL 50 Ω VDD 90% td(off) tf toff Data Sheet G15620EJ2V0DS µ PA1950 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −100 Single Pulse 2 Mounted on 250 mm x 35 µm Copper Pad Connected to Drain Electrode in 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 50 mm x 50 mm x 1.6 mm FR-4 Board ID (pulse) tedV) i im ) L .5 on −4 S( ID (DC) RD GS = (V −10 PW = 1 ms −1 10 ms 100 ms 5 s (2 units) −0.1 20 5 s (1 unit) 0 30 60 120 90 TA - Ambient Temperature - ˚C 0 −0.01 −0.1 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −10 Pulsed VGS = −4.5 V −4.0 V −2.5 V −4 −1.8 V ID - Drain Current - A ID - Drain Current - A VDS = −10 V −10 −8 −2 TA = 125˚C −1 −0.1 75˚C −0.01 −0.001 0.0 −25˚C −0.2 −0.4 −0.6 −0.8 VDS - Drain to Source Voltage - V −1.0 −0.00001 0 −0.5 | yfs | - Forward Transfer Admittance - S −1.0 −0.5 0 50 100 −1.5 −2.0 FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100 VDS = −10 V ID = −1 mA 0.0 −50 −1.0 VGS - Gate to Sorce Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V 25˚C −0.0001 0 −1.5 −100 FORWARD TRANSFER CHARACTERISTICS −100 −6 −10 −1 VDS - Drain to Source Voltage - V 150 VDS = −10V 10 TA = 125˚C 75˚C 1 25˚C −25˚C 0.1 0.01 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A Tch - Channel Temperature - ˚C Data Sheet G15620EJ2V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 VGS = −1.8 V 350 300 TA = 125˚C 250 75˚C 25˚C 200 −25˚C 150 −0.01 −1 −0.1 −10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1950 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 VGS = −2.5 V 250 200 TA = 125˚C 75˚C 25˚C 150 −25˚C 100 −0.01 250 VGS = −3.0 V 200 TA = 125˚C 75˚C 25˚C −25˚C 100 −0.1 −1 −10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 −0.01 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 125˚C 75˚C 100 −2.5 V −3.0 V −4.5 V 0 −50 0 Tch 4 50 100 - Channel Temperature -˚C RDS (on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ VGS = −1.8 V 100 25˚C −25˚C 50 −0.01 −1 −0.1 −10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 400 ID = −1.5 A 200 VGS = −4.5 V 150 ID - Drain Current - A 300 −10 ID - Drain Current - A ID - Drain Current - A 150 −1 −0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 400 ID = −1.5 A 300 200 100 0 0 150 Data Sheet G15620EJ2V0DS −2 −4 −6 VGS - Gate to Source Voltage - V −8 µ PA1950 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF 1000 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz VGS = 0 V Ciss 100 Coss Crss 10 −0.1 −1 −10 td(off) 100 tr VDD = −6.0 V VGS(on) = −4.0 V RG = 10 Ω −100 1 −0.1 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS - Gate to Source Voltage - V 1 0.1 -1.0 −10 ID = −2.5 A VDD = 10 V 6V −4 −3 −2 −1 0 -1.2 0 VF(S-D) - Source to Drain Voltage - V 0.4 1.2 0.8 1.6 QG - Gate Charge - nC 2.0 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single Pulse rth(ch-A) - Transient Thermal Resistance - ˚C/W IF - Diode Forward Current - A 10 -0.8 −1.0 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS −5 100 -0.6 td(on) 10 VDS - Drain to Source Voltage - V 0.01 -0.4 tf Mounted on FR-4 Board of 50 cm2 x 1.1 mm PD (FET1) : PD (FET2) = 1:0 100 PD (FET1) : PD (FET2) = 1:1 10 1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G15620EJ2V0DS 5 µ PA1950 [MEMO] 6 Data Sheet G15620EJ2V0DS µ PA1950 [MEMO] Data Sheet G15620EJ2V0DS 7 µ PA1950 • The information in this document is current as of January, 2002. 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