WTD9435 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN DRAIN CURRENT -20 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE Features: *Super High Dense Cell Design For Low R DS(ON) 2 SOURCE R DS(ON) <50m Ω@V GS =-10V 4 *Simple Drive Requirement 1 *Lower On-resistance 2 3 1. GATE 2.4 DRAIN 3. SOURCE *Fast Switching Characteristic *TO-252 Package D-PAK / (TO-252) Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 ID -20 -13 IDM -72 Total Power Dissipation(TC=25˚C) PD 31 W Thermal Resistance Junction-case RθJC 4.0 ˚C/W Thermal Resistance Junction-ambient RθJA 110 ˚C/W TJ,Tstg - 55~+150 ˚C Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current 1 Operating Junction and Storage Temperature Range WEITRON http:www.weitron.com.tw 1/6 Unit V A 12-Jul-07 WTD9435 Electrical Characteristics (Tj = 25℃ Unless otherwise specified) Characteristic Symbol Min Typ Max -30 - - Unit Static Drain-Source Breakdown Voltage ID=-250µA,VGS=0 BVDSS Gate-Source Threshold Voltage ID=-250µA,VDS=VGS VGS(Th) -1.0 - 3.0 IGSS - - ±100 - - -1 V Gate-Source Leakage current VGS=±20V Drain-SourceLeakage Current(Tj=25˚C) VDS=-30V,VGS=0 Drain-SourceLeakage Current(Tj=70˚C) VDS=-24V,VGS=0 nA μA IDSS - - -25 RDS(on) - - 50 90 mΩ gfs - 9.6 - S Input Capacitance VGS=0V,VDS=-25V,f=1.0MHz Ciss - 463 740 Output Capacitance VGS=0V,VDS=-25V,f=1.0MHz Coss - 187 - Reverse Transfer Capacitance VGS=0V,VDS=-25V,f=1.0MHz Crss - 140 - Static Drain-Source On-Resistance2 ID=-10A,VGS=-10V ID=-5A,VGS=-4.5V Forward Transconductance ID=-10A,VDS=-10V Dynamic WEITRON http:www.weitron.com.tw 2/6 pF 12-Jul-07 WTD9435 Switching Turn-on Delay Time2 ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω Td(on) - 9.6 - Rise Time ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω Tr - 18 - Turn-off Delay Time ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω Td(off) - 19 - Fall Time ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω Tf - 14 - Total Gate CHarge2 ID=-10A,VDS=-24V,VGS=-4.5V Qg - 10 - Gate-Source Charge ID=-10A,VDS=-24V,VGS=-4.5V Qgs - 3 - Gate-Drain (”Miller”) Change ID=-10A,VDS=-24V,VGS=-4.5V Qgd - 5 - Forward On Voltage2 IS=-10A,VGS=0V VSD - - -1.2 V Reverse Recovery Time IS=-10A,VGS=0V dl/dt=100A/µs Trr - 34 - ns Reverse Recovery Charge IS=-10A,VGS=0V dl/dt=100A/µs Q rr - 30 - nc ns nC Source-Drain Diode Characteristics Note: 1. Pulse width limited by safe operating area. 2. Pulse width ≤ 300μs, duty cycle ≤ 2%. WEITRON http:www.weitron.com.tw 3/6 12-Jul-07 WTD9435 Characteristics Curve 80 -8.0V 60 -6.0V 40 -4.5V 20 0 2 4 6 8 -8.0V 40 -6.0V 30 -4.5V 20 VG=-4.0V 10 0 10 0 VDS . Drain-to-Source Voltage(V) ID=10A TC=25˚C Normalized R DS(ON) R DS(ON) (mΩ) 6 7 ID=18A VG=10V 1.6 27 25 23 21 1.4 1.2 1.0 0.8 19 17 0 4 Fig.2 Typical Output Characteristics 1.8 29 2 -VDS . Drain-to-Source Voltage(V) Fig.1 Typical Output Characteristics 31 -10V 50 VG=-4.0V 0 Tc=150˚C 60 ID , Drain Current (A) ID , Drain Current (A) 70 -10V Tc=25˚C 4 5 6 7 8 9 10 11 0.6 -50 12 0 50 100 150 VGS , Gate-to-Source Voltage(V) Fig.3 On-Resistance v.s. Gate Voltage Fig.4 Normalized OnResistance 10 3 8 2 VGS(th) (V) -ID (A) 6 4 1 2 0 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , Source-to-Drain Voltage (V) 0 1.4 Fig.5 Forward Characteristica of Reverse Diode WEITRON http://www.weitron.com.tw -50 0 50 100 150 Fig.6 Gate Threshold Voltage v.s. Junction Temperature 4/6 12-Jul-07 WTD9435 ID=-10A 12 VDS=-24V Ciss 10 Coss 8 C (pF) -VGS , Gate Source Voltage (V) f=1.0MHz 1000 14 6 Crss 100 4 2 0 0 4 8 12 16 10 20 1 5 7 13 17 21 25 29 -V DS , Drain-to-Source Voltage(V) QG , Total Gate Charge (nC) Fig 7. Gate Charge Charateristics Fig 8. Effective Transient Thermal Impedance 100 f=1.0MHz 1 DUTY=0.5 1ms 0.2 -ID(A) 10ms 100ms Is DC 1 C(pF) 10 0.1 0.1 PDM 0.05 0.02 T 0.01 Duty factor = t / T Peak Tj=PDM x Rthjc+ TC SINGLE PULSE Single Pulse 0.1 0.1 1 10 0.01 100 0.00001 0.0001 -VDS , Drain-to-Voltage (V) Fig 9. Maximum Safe Operating Area t 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr Charge td(off) tr Fig.12 Gate Charge Waveform Fig 11. Switching Time Waveform WEITRON http://www.weitron.com.tw Q 5/6 12-Jul-07 WTD9435 D-PAK / (TO-252) Outline Dimension Unit:mm D-PAK E A G 4 H Dim A B C D E G H J K L M J 1 2 3 B M K D C WEITRON http://www.weitron.com.tw L 6/6 Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 12-Jul-07