TOREX XP132A1275SR

XP132A1275SR
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Power MOS FET
P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.075Ω (max)
Ultra High-Speed Switching
SOP - 8 Package
■ General Description
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Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
■ Features
The XP132A1275SR is a P-Channel Power MOS FET with low on-state
Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V )
resistance and ultra high-speed switching characteristics.
Rds (on) = 0.115Ω ( Vgs = -2.5V )
Because high-speed switching is possible, the IC can be efficiently
Ultra high-speed switching
set thereby saving energy.
Operational Voltage : -2.5V
The small SOP-8 package makes high density mounting possible.
High density mounting : SOP - 8
■ Pin Configuration
■ Pin Assignment
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
PIN NAME
FUNCTION
1-3
S
Source
4
G
Gate
5-8
D
Drain
PIN NUMBER
u
SOP - 8 Top View
■ Equivalent Circuit
■ Absolute Maximum Ratings
Ta=25 OC
RATINGS
UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
-20
+ 12
-5
-20
-5
2.5
V
V
A
A
A
W
Channel Temperature
Tch
150
O
C
Storage Temperature
Tstg
-55 to 150
O
C
PARAMETER
1
8
2
7
3
6
4
5
P - Channel MOS FET
( 1 device built-in )
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
SYMBOL
Power Dissipation (note)
( note ) : When implemented on a glass epoxy PCB
389
XP132A1275SR
Power MOS FET
■ Electrical Characteristics
DC characteristics
CONDITIONS
MIN
TYP
SYMBOL
Drain Cut-off Current
Gate-Source Leakage Current
Idss
Vds = - 20 , Vgs = 0V
- 10
µA
Igss
Vgs = ± 12 , Vds = 0V
±1
µA
Gate-Source Cut-off Voltage
Vgs (off )
Id = -1mA , Vds = - 10V
- 0.5
MAX
Ta=25°C
UNITS
PARAMETER
- 1.2
V
Id = - 3A , Vgs = - 4.5V
0.06
0.075
Ω
Id = - 3A , Vgs = - 2.5V
0.092
0.115
Ω
Drain-Source On-state Resistance
( note )
Rds ( on )
Forward Transfer Admittance
( note )
| Yfs |
Id = - 3A , Vds = - 10V
8
Vf
If = - 5A , Vgs = 0V
- 0.85
- 1.1
V
SYMBOL
CONDITIONS
TYP
MAX
Ta=25°C
UNITS
Body Drain Diode
Forward Voltage
S
( note ) : Effective during pulse test.
Dynamic characteristics
PARAMETER
u
MIN
Input Capacitance
Ciss
770
pF
Output Capacitance
Coss
Vds = - 10V , Vgs = 0V
440
pF
Feedback Capacitance
Crss
f = 1 MHz
180
pF
PARAMETER
SYMBOL
CONDITIONS
Turn-on Delay Time
td ( on )
10
ns
Rise Time
tr
Vgs = - 5V , Id = - 3A
25
ns
Turn-off Delay Time
td ( off )
Vdd = - 10V
45
ns
Fall Time
tf
40
ns
Switching characteristics
MIN
TYP
MAX
Ta=25°C
UNITS
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
390
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
50
MAX
UNITS
°C / W
■ Electrical Characteristics
Drain Current vs. Drain/Source Voltage
Drain Current vs. Gate/Source Voltage
Pulse Test, Ta=25℃
-20
-4.5V
25℃
Ta=-55℃
-16
Drain Current :Id (A)
-16
Drain Current :Id (A)
Vds=-10V, Pulse Test
-20
-3.5V
-3V
-5V
-4V
-2.5V
-12
-8
-2V
-4
125℃
-12
-8
-4
Vgs=-1.5V
0
0
0
-0.5
-1
-1.5
-2
-2.5
-3
0
Drain / Source Voltage :Vds (V)
Drain/Source On-State Resistance :Rds (on) (Ω)
Drain/Source On-State Resistance :Rds (on) (Ω)
0.16
Id=-5A
-3A
0.08
0.04
0
-4
-5
Pulse Test, Ta=25℃
1
u
Vgs=-2.5V
0.1
-4.5V
0.01
0
-2
-4
-6
-8
-10
0
-5
Gate/Source Voltage :Vgs (V)
Id=-5A
Vgs=-2.5V
-3A
0.08
-3A, -5A
-4.5V
0.04
0
-50
-20
Vds=-10V, Id=-1mA
0.6
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
0.16
0.12
-15
Gate / Source Cut Off Voltage Variance
vs. Ambient Temp.
Pulse Test
0.2
-10
Drain Current :Id (A)
Drain / Source On-State Resistance
vs. Ambient Temp.
Drain/Source On-State Resistance :Rds (on) (Ω)
-3
Drain/Source On-State Resistance
vs. Drain Current
Pulse Test, Ta=25℃
0.12
-2
Gate / Source Voltage :Vgs (V)
Drain/Source On-State Resistance
vs. Gate/Source Voltage
0.2
-1
0.4
0.2
0
-0.2
-0.4
-0.6
0
50
100
Ambient Temp. :Topr (℃)
150
-50
0
50
100
150
Ambient Temp. :Topr (℃)
391
XP132A1275SR
Power MOS FET
■ Electrical Characteristics
Capacitance vs. Drain/Source Voltage
Ciss
1000
Coss
Crss
100
10
-5
-10
td(off)
tr
10
td(on)
-15
-20
0
-2
-4
-6
-8
-10
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Reverse Drain Current vs. Source/Drain
Vds=-10V, Id=-5A, Ta=25℃
Ta=25℃, Pulse Test
-20
Reverse Drain Current:Idr (A)
-10
Gate/Source Voltage:Vgs (V)
tf
100
1
0
u
Vgs=-5V, Vdd≒-10V, PW=10μs, duty≦1%, Ta=25℃
1000
Switching Time:t (ns)
10000
Capacitance:C (pF)
Switching Time vs. Drain Current
Vgs=0V, f=1MHz, Ta=25℃
-8
-6
-4
-2
0
-16
-4.5V
-12
-2.5V
-8
Vgs=0V,4.5V
-4
0
0
10
20
30
40
0
Gate Charge:Qg (nc)
-0.2
-0.4
-0.6
-0.8
-1
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal resistance:γs(t)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a) = 50℃/W (Implemented on a glass epoxy PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
Pulse Width:PW (sec)
392
1
10
100