STMICROELECTRONICS Z00607DA1BA2

Z00607MA
Z00607DA
®
SENSITIVE GATE TRIACS
A1
A2
FEATURES
G
IT(RMS) = 0.8A
VDRM = 400V and 600V
IGT = 5mA
DESCRIPTION
A1
The Z006607xA triacs are intended for general
applications where high gate sensitivity is
required.
G
A2
TO92
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
Tstg
Tj
Tl
Parameter
Value
Unit
Tl= 50 °C
0.8
A
tp = 8.3 ms
10.5
A
tp = 10 ms
10
Non repetitive surge peak on-state current
(Tj initial = 110°C, full cycle)
F = 60Hz
8
I2t Value for fusing
tp = 10 ms
0.5
A2s
- 40, + 150
- 40, + 110
°C
260
°C
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C )
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s
Symbol
VDRM
VRRM
Parameter
Repetitive peak off-state voltage
Tj = 110°C
May 1999 - Ed: 1
Z00607xA
D
M
400
600
Unit
V
1/4
Z00607DA / Z00607MA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
150
°C/W
Rth(j-l)
Junction to lead
60
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs)
IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Sensitivity
Quadrant
07
Unit
IGT
VD=12V (DC) RL=140Ω
Tj= 25°C
I-II-III
IV
MAX
7
VGT
VD=12V (DC) RL=140Ω
Tj= 25°C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 110°C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 25mA
IT = 1.0A
dIG/dt = 0.25A/µs
Tj= 25°C
I-II-III-IV
TYP
2
µs
IH *
IT= 200 mA Gate open
Tj= 25°C
MAX
5
mA
IG= 1.2 IGT
Tj= 25°C
I-III-IV
MAX
10
mA
II
MAX
20
MAX
1.5
V
IL
VTM *
IDRM
IRRM
dV/dt *
(dV/dt)c *
ITM= 1.1A tp= 380µs
Tj= 25°C
MAX
5
mA
Tj= 25°C
MAX
10
µA
Tj= 110°C
MAX
0.1
mA
VD=67%VDRM
Gate open
Tj= 110°C
MIN
10
V/µs
(dI/dt)c = 0.35 A/ms
Tj= 110°C
MIN
1.5
V/µs
VD = VDRM
VR = VRRM
* For either polarity of electrode A2 voltage with reference to electrode A1
Fig 1: Maximum power dissipation versus RMS
on-state current.
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 α=30°
0.1
0.0
0.0
0.1
2/4
Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures
(Tamb and Tlead).
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
α=180°
α=120°
α=90°
α=60°
180°
α
α
IT(RMS)(A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Tlead (°C)
50
Rth(j-l)
70
Rth(j-a)
90
α=180°
0
Tamb(°C)
10 20 30 40 50 60 70 80 90 100 110
110
Z00607DA / Z00607MA
Fig 3: RMS on-state current versus ambient temperature.
Fig 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
IT(RMS)(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
K=[Zth(j-a)/Rth(j-a)]
1.00
α=180°
Rth(j-a)=Rth(j-l)
0.10
Rth(j-a)=150°C/W
tp(s)
Tamb(°C)
0
10
20
30
40
50
60
70
80
90 100 110
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typical values).
0.01
1E-3
1.5
IH
1.0
0.5
Tj(°C)
-20
0
20
1E+0
1E+1
1E+2 5E+2
ITSM(A)
IGT
0.0
-40
1E-1
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj] / IGT,IH[Tj=25°C]
2.5
2.0
1E-2
40
60
80
100
120
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
9
8
7
6
5
4
3
2
1
0
Tj initial=25°C
F=50Hz
Number of cycles
1
10
100
1000
Fig 8: On-state characteristics (maximum values).
ITM(A)
ITSM(A),I²t(A²s)
10.0
50.0
Tj initial=25°C
Tj max.:
Vto= 0.95 V
Rd= 420 mΩ
ITSM
10.0
Tj=Tj max.
1.0
1.0
I²t
Tj=25°C
tp(ms)
0.1
1
2
VTM(V)
5
10
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3/4
Z00607DA / Z00607MA
PACKAGE MECHANICAL DATA
TO92 (Plastic)
DIMENSIONS
REF.
A
A
1.35
0.053
B
C
4.70
C
F
Inches
Typ. Min. Max. Typ. Min. Max.
a
B
Millimeters
D
E
2.54
0.185
0.100
D
4.40
0.173
E
12.70
0.500
F
3.70
0.146
a
0.45
0.017
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
Z00607DA 1BA2
Z0607DA
TO92
0.2g.
2500
Bulk
Z00607MA 1BA2
Z0607MA
TO92
0.2g.
2500
Bulk
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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