SOT323 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS ZUMT860B ZUMT860C ISSUE 1 - DECEMBER 1998 Partmarking Detail: ZUMT860B ZUMT860C T2B T22 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCES -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -100 mA Peak Pulse Current IEM -200 mA Base Current IBM -200 mA 330 mW -55 to +150 °C Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. -15 -4 nA µA VCB = -30V VCB = -30V, Tamb=150°C -75 -250 mV IC=-10mA, IB=-0.5mA -250 -650 mV IC=-100mA, IB=-5mA -300 -600 Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Voltage VBE -700 -850 -580 -650 -750 -820 mV IC=-10mA* mV IC=-10mA ,IB=-0.5mA IC=-100mA,IB=-5mA mV IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current. ZUMT860B ZUMT860C TYPICAL CHARACTERISTICS 1.2 1.2 IC/IB=10 +25° C 0.8 0.8 IC/IB=10 IC/IB=20 IC/IB=50 -55°C +25°C +100°C +150°C 0.4 0.4 0 0 1m 10m 100m 1 1m IC - Collector Current (A) VCE(sat) v IC 10m 100m 1 IC - Collector Current (A) VCE(sat) v IC 500 1.0 VCE=5V IC/IB=10 +100°C +25°C -55°C 250 0.5 -55°C +25°C +100°C +150°C 0 0 10m 1m 100m 1m 1 IC - Collector Current (A) hFE v IC 10m 100m 1 IC - Collector Current (A) VBE(sat) v IC 1 VCE=5V 1.0 100m 0.5 -55°C +25°C +100°C 10m 0 1m 10m 100m IC - Collector Current (A) VBE(on) v IC 1 1m 100m DC 1s 100ms 10ms 1ms 100µs 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100 ZUMT860B ZUMT860C ELECTRICAL CHARACTERISTICS (Continued) PARAMETER SYMBOL Noise Figure N MIN. TYP. MAX. UNIT CONDITIONS. - 1 4 dB VCB = -5V, IC=-200µA, RG=2kΩ, f=1kHz, ∆f=200Hz – 1 3 dB VCB = -5V, IC=-200µA, RG=2kΩ, f=30Hz to 15kHz at -3dB points VCB = -5V, IC=-200µA, RG=2kΩ, f=10Hz to 50Hz at -3dB points Equivalent Noise Voltage en – – 110 nV Dynamic Characteristics hie 3.2 4.5 8.5 kΩ 6 8.7 15 Group B Group C Group B hre Group C Group B hfe 450 Group C Group B hoe Group B – – Group C Static Forward Current Ratio 240 hFE – hFE Transition Frequency fT Collector-Base Capacitance Cobo x10-4 3 x10-4 330 600 30 60 290 – VCE=-5V Ic=-2mA f=1kHz 500 900 60 110 µs µs 150 220 Group C kΩ 2 IC=-0.01mA,VCE=-5V 475 IC=-2mA, VCE=-5V – IC=-100mA,VCE=-5V 270 IC=-0.01mA, VCE=-5V 420 500 800 IC=-2mA, VCE=-5V – – – IC=-100mA,VCE=-5V – 300 – 4.5 MHz IC=-10mA,VCE=-5V f=100MHz pF VCB=-10V, f=1MHz