Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA • Characterized for End-OfLife Battery Use (2.7 V) • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available[1] Hewlett Packard’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3␣ lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. Outline Drawing EMITTER COLLECTOR 320 BASE EMITTER SOT-143 (AT-32011) COLLECTOR 320 BASE The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20␣ emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett Packard’s 10␣ GHz f t, 30 GHz f MAX SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. EMITTER SOT-23 (AT-32033) Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.” 4-53 5965-8920E AT-32011, AT-32033 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum[1] Thermal Resistance[2]: θjc = 550 °C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMounting Surface = 25°C. 3. Derate at 1.82 mW/°C for TC > 40°C. VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 11 VCEO Collector-Emitter Voltage V 5.5 IC Collector Current mA 32 PT Power Dissipation[2, 3] mW 200 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Electrical Specifications, TA = 25°C AT-32011 Symbol NF GA hFE ICBO IEBO Parameters and Test Conditions Units Min. Noise Figure VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB Associated Gain VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 12.5[1] – 70 Forward Current Transfer Ratio VCE = 2.7 V, IC = 2 mA AT-32033 Typ. Max. 1.0[1] 1.3[1] 14[1] Min. 11[2] 300 70 Max. 1.0[2] 1.3[2] 12.5[2] 300 Collector Cutoff Current VCB = 3 V µA 0.2 0.2 Emitter Cutoff Current VEB = 1 V µA 1.5 1.5 Notes: 1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. 2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. 1000 pF Typ. VBB 1000 pF VCC W = 10 L = 1870 W = 30 L = 60 W = 30 L = 60 RF OUT RF IN W = 10 CKT A: L = 380 CKT B: L = 380 TEST CIRCUIT BOARD MATL = 0.062" FR-4 (ε = 4.8) CKT A: 25 Ω CKT B: 5 Ω W = 10 L = 1870 CKT A: W = 30 L = 50 x 2 CKT B: W = 30 L = 60 W = 10 CKT A: L = 105 CKT B: L = 850 NOT TO SCALE DIMENSIONS IN MILS Figure 1. Test Circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 4-54 Characterization Information, TA = 25°C AT-32011 AT-32033 Units Typ. Typ. Power at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 13 13 Gain at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16.5 15 Output Third Order Intercept Point (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24 24 dB 13 11.5 Symbol Parameters and Test Conditions P1dB G1dB IP3 Gain in 50 Ω System VCE = 2.7 V, IC = 2 mA |S21|E2 f = 0.9 GHz 25 2 20 15 1 1 mA 2 mA 5 mA 10 mA 20 mA 0.5 0 0 0.5 1 2 1.5 15 Ga (dB) Ga (dB) NOISE FIGURE (dB) 20 1.5 10 1 mA 2 mA 5 mA 10 mA 20 mA 5 0 2.5 0 0.5 G 1dB (dB) P 1dB (dBm) 15 10 5 1.5 2.0 0 2.5 0 0.5 2.5 15 10 2 mA 5 mA 10 mA 20 mA FREQUENCY (GHz) Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE␣ = 2.7 V. 0.5 1.5 2.0 2.5 FREQUENCY (GHz) Figure 6. AT-32011 1 dB Compressed Gain vs. Frequency and Current at VCE␣ = 2.7 V. 4-55 2.0 2.5 10 2 mA 5 mA 10 mA 20 mA 5 1.0 1.5 Figure 4. AT-32033 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE␣ = 2.7 V. 15 0 1.0 FREQUENCY (GHz) 20 0 1.0 2.0 20 5 2 mA 5 mA 10 mA 20 mA 0.5 1.5 Figure 3. AT-32011 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE␣ = 2.7 V. 20 0 1.0 G 1dB (dB) Figure 2. AT-32011 and AT-32033 Minimum Noise Figure vs. Frequency and Current at VCE␣ = 2.7 V. -5 1 mA 2 mA 5 mA 10 mA 20 mA 5 FREQUENCY (GHz) FREQUENCY (GHz) 0 10 0 0 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) Figure 7. AT-32033 1 dB Compressed Gain vs. Frequency and Current at VCE␣ = 2.7 V. AT-32011, AT-32033 Typical Performance 20 20 20 15 15 10 5 -5 10 2 mA 5 mA 10 mA 20 mA 0 0 0.5 G 1dB (dB) G 1dB (dB) P 1dB (dBm) 15 2 mA 5 mA 10 mA 20 mA 5 1.0 1.5 2.0 0 2.5 0 0.5 FREQUENCY (GHz) 2 mA 5 mA 2.0 1.5 0 2.5 0 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) Figure 10. AT-32033 1 dB Compressed Gain vs. Frequency and Current at VCE␣ = 5 V. 20 20 15 15 2.5 0 G 1dB (dB) 5 G 1dB (dB) P 1dB (dBm) 1.0 Figure 9. AT-32011 1 dB Compressed Gain vs. Frequency and Current at VCE␣ = 5 V. 10 10 -5 10 5 5 -2.5 2 mA 5 mA 2 mA 5 mA 0 0.5 1.0 1.5 2.0 0 2.5 0 FREQUENCY (GHz) 0.5 1.0 1.5 2.0 0 2.5 Figure 12. AT-32011 1 dB Compressed Gain vs. Frequency and Current at VCE␣ = 1 V. 2.0 20 2.0 20 1.5 1.0 NF 5 0 -50 0.5 0 50 0 100 TEMPERATURE (°C) Figure 14. AT-32011 Noise Figure and Associated Gain at VCE␣ = 2 .7 V, IC␣ =␣ 2␣ mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). 1.5 15 Ga 10 1.0 NF 5 0 -50 0.5 0 50 0 100 TEMPERATURE (°C) Figure 15. AT-32033 Noise Figure and Associated Gain at VCE␣ = 2 .7 V, IC␣ =␣ 2␣ mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). 4-56 IP3 (dBm) 20 NOISE FIGURE (dB) 25 Ga (dBm) 2.5 NOISE FIGURE (dB) 25 Ga 1.0 2.0 1.5 2.5 Figure 13. AT-32033 1 dB Compressed Gain vs. Frequency and Current at VCE␣ = 1 V. 2.5 10 0.5 FREQUENCY (GHz) 25 15 0 FREQUENCY (GHz) Figure 11. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE␣ = 1 V. Ga (dBm) 2 mA 5 mA 10 mA 20 mA 5 FREQUENCY (GHz) Figure 8. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE␣ = 5 V. 7.5 10 15 10 2 mA 5 mA 10 mA 20 mA 5 0 0 0.5 1.0 1.5 2.0 FREQUENCY (MHz) Figure 16. AT-32011 and AT-32033 Third Order Intercept vs. Frequency and Bias at VCE␣ = 2 .7 V, with Optimal Tuning. 2.5 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 1 V, IC = 1 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.97 0.88 0.78 0.75 0.67 0.63 0.61 0.59 0.59 0.63 0.69 -11 -52 -86 -94 -127 -144 -155 -175 157 120 94 11.09 10.13 8.67 8.35 6.35 5.25 4.75 3.48 1.77 -0.39 -2.39 3.59 3.21 2.71 2.62 2.08 1.83 1.73 1.49 1.23 0.96 0.76 172 141 117 112 89 77 70 57 40 18 0 -33.55 -20.85 -17.62 -17.27 -16.30 -16.28 -16.42 -16.86 -17.89 -18.40 -15.60 0.021 0.091 0.132 0.137 0.153 0.154 0.151 0.144 0.128 0.120 0.166 83 59 41 37 23 16 13 9 8 23 35 0.99 0.92 0.82 0.79 0.71 0.67 0.65 0.62 0.61 0.59 0.59 -5 -21 -32 -35 -45 -50 -53 -59 -68 -84 -104 25 AT-32011 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA Fmin dB Mag Ang Rn – 0.5[1] 0.9 1.8 2.4 0.42 0.71 1.37 1.80 0.79 0.70 0.53 0.55 26 54 119 158 0.44 0.35 0.18 0.08 GAIN (dB) 15 Γopt Freq. GHz MAG 5 -5 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. MSG S21 0 1 S11 3 5 4 Figure 17. AT-32011 Gains vs. Frequency at VCE␣ = 1 V, IC␣ = 1 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. 2 FREQUENCY (GHz) S21 VCE = 1 V, IC = 1 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.97 0.81 0.61 0.56 0.41 0.36 0.34 0.34 0.38 0.46 0.51 -11 -52 -87 -95 -136 -160 -177 154 119 81 56 11.09 9.88 8.07 7.65 5.43 4.30 3.74 2.49 0.96 -0.84 -1.90 3.58 3.12 2.53 2.41 1.87 1.64 1.54 1.33 1.12 0.91 0.80 170 134 107 101 77 66 59 47 32 15 5 -32.75 -20.30 -17.57 -17.24 -16.61 -16.36 -16.05 -15.10 -12.77 -8.68 -5.68 0.023 0.097 0.132 0.137 0.148 0.152 0.158 0.176 0.230 0.368 0.520 83 60 46 44 39 41 44 49 55 50 37 0.99 0.90 0.78 0.76 0.68 0.65 0.63 0.61 0.59 0.56 0.51 -5 -22 -33 -35 -42 -46 -49 -55 -65 -87 -114 25 AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA Fmin dB Mag Ang Rn – 0.5[1] 0.9 1.8 2.4 0.42 0.71 1.37 1.80 0.87 0.73 0.42 0.50 25 55 143 -162 0.48 0.34 0.11 0.07 15 GAIN (dB) Γopt Freq. GHz MAG 4-57 MSG 5 S21 -5 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. MSG 0 1 2 3 4 5 FREQUENCY (GHz) Figure 18. AT-32033 Gains vs. Frequency at VCE␣ = 1 V, I C␣ = 1 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 2.7 V, IC = 2 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.94 0.80 0.67 0.64 0.55 0.51 0.50 0.48 0.49 0.54 0.61 -13 -60 -97 -104 -137 -154 -165 176 150 116 92 16.67 15.10 12.97 12.48 10.04 8.77 8.13 6.75 4.97 2.73 0.83 6.81 5.69 4.45 4.21 3.18 2.75 2.55 2.18 1.77 1.37 1.10 170 136 112 107 86 76 70 58 43 22 4 -35.25 -23.07 -20.34 -20.05 -19.21 -19.04 -18.99 -18.84 -18.52 -16.98 -14.50 0.017 0.070 0.096 0.099 0.110 0.112 0.112 0.114 0.119 0.142 0.188 82 57 41 39 30 28 27 27 30 36 37 0.99 0.86 0.73 0.70 0.61 0.58 0.56 0.54 0.52 0.50 0.50 -6 -24 -35 -37 -45 -49 -52 -57 -64 -77 -95 30 AT-32011 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 0.57 0.78 1.25 1.57 0.69 0.60 0.42 0.44 Ang Rn – 22 51 117 159 0.30 0.25 0.14 0.08 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag MSG MAG 10 S21 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 4 3 5 FREQUENCY (GHz) Figure 19. AT-32011 Gains vs. Frequency at VCE␣ = 2.7 V, I C␣ = 2 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 2.7 V, IC = 2 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.93 0.68 0.44 0.39 0.23 0.18 0.16 0.17 0.22 0.32 0.40 -13 -56 -86 -93 -129 -156 -176 146 108 76 56 16.61 14.29 11.48 10.88 8.16 6.89 6.19 4.91 3.35 1.51 0.17 6.77 5.18 3.75 3.50 2.56 2.21 2.04 1.76 1.47 1.19 1.02 167 127 101 96 76 66 60 50 36 18 4 -34.89 -23.10 -20.35 -19.91 -17.99 -16.89 -16.14 -14.70 -12.51 -9.19 -6.54 0.018 0.070 0.096 0.101 0.126 0.143 0.156 0.184 0.237 0.347 0.471 82 61 55 54 55 57 57 58 57 51 40 0.99 0.83 0.71 0.70 0.64 0.62 0.61 0.60 0.58 0.55 0.51 -6 -22 -30 -31 -36 -39 -42 -47 -56 -73 -95 30 AT-32033 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 0.57 0.78 1.25 1.57 0.77 0.63 0.32 0.40 Ang Rn – 15 49 136 -159 0.36 0.28 0.10 0.08 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag MSG 4-58 MSG S21 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. MAG 10 0 1 2 3 4 5 FREQUENCY (GHz) Figure 20. AT-32033 Gains vs. Frequency at VCE␣ = 2 .7 V, IC␣ = 2 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 2.7 V, IC = 20 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.52 0.36 0.34 0.34 0.34 0.34 0.35 0.36 0.39 0.45 0.52 -49 -138 -168 -174 165 155 148 136 120 98 82 31.08 22.96 18.33 17.46 14.13 12.61 11.74 10.23 8.38 6.00 4.25 35.79 14.06 8.25 7.47 5.09 4.27 3.86 3.25 2.62 2.00 1.63 149 102 86 83 71 64 60 52 40 23 7 -37.78 -28.93 -25.15 -24.41 -21.35 -19.92 -19.08 -17.60 -15.86 -13.68 -11.93 0.013 0.036 0.055 0.060 0.086 0.101 0.111 0.132 0.161 0.207 0.253 72 62 64 64 63 61 60 57 51 42 32 0.83 0.40 0.31 0.30 0.28 0.28 0.27 0.27 0.26 0.24 0.23 -22 -42 -42 -42 -45 -49 -52 -58 -67 -84 -106 30 AT-32011 Typical Noise Parameters, MSG Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA Fmin dB Mag Ang Rn – 0.5[1] 0.9 1.8 2.4 1.39 1.51 1.78 1.96 0.15 0.14 0.28 0.40 65 105 -164 -142 0.16 0.13 0.12 0.13 20 GAIN (dB) Γopt Freq. GHz MAG S21 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. MSG 10 0 1 2 4 3 5 FREQUENCY (GHz) Figure 21. AT-32011 Gains vs. Frequency at VCE␣ = 2.7 V, I C␣ = 20 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 2.7 V, IC = 20 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.50 0.16 0.08 0.07 0.06 0.07 0.08 0.11 0.15 0.21 0.26 -35 -52 -36 -31 12 31 40 48 53 52 48 29.84 19.58 14.81 13.96 10.71 9.31 8.50 7.16 5.62 3.86 2.61 31.03 9.53 5.50 4.99 3.43 2.92 2.66 2.28 1.91 1.56 1.35 137 94 81 78 66 60 56 48 37 20 6 -37.08 -25.35 -20.63 -19.66 -16.31 -14.75 -13.85 -12.32 -10.49 -8.11 -6.34 0.014 0.054 0.093 0.104 0.153 0.183 0.203 0.242 0.299 0.393 0.482 77 77 75 74 69 66 63 59 52 41 29 0.79 0.53 0.50 0.50 0.49 0.48 0.47 0.46 0.43 0.39 0.33 -18 -20 -24 -25 -31 -35 -38 -44 -54 -71 -91 30 MSG AT-32033 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 1.39 1.51 1.78 1.96 0.15 0.12 0.28 0.46 Ang Rn – 45 100 -135 -107 0.28 0.22 0.14 0.22 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA Γopt Freq. Fmin GHz dB Mag MAG 10 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. S21 0 1 MSG 2 3 4 5 FREQUENCY (GHz) 4-59 Figure 22. AT-32033 Gains vs. Frequency at VCE␣ = 2 .7 V, IC␣ = 20 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 5 V, IC = 2 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.95 0.81 0.68 0.64 0.55 0.51 0.49 0.47 0.47 0.52 0.59 -13 -57 -93 -100 -133 -150 -161 180 153 118 94 16.65 15.18 13.16 12.69 10.31 9.05 8.43 7.06 5.29 3.07 1.17 6.80 5.74 4.55 4.31 3.28 2.84 2.64 2.25 1.84 1.42 1.14 170 137 113 109 88 78 71 60 45 24 6 -35.84 -23.56 -20.72 -20.42 -19.49 -19.29 -19.22 -19.03 -18.72 -17.19 -14.73 0.016 0.066 0.092 0.095 0.106 0.109 0.109 0.112 0.116 0.138 0.183 82 58 43 40 32 29 28 29 31 37 38 0.99 0.87 0.74 0.72 0.63 0.60 0.58 0.55 0.54 0.52 0.51 -6 -23 -34 -36 -43 -47 -50 -55 -62 -75 -92 30 AT-32011 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 0.52 0.75 1.26 1.60 0.73 0.63 0.44 0.45 Ang Rn – 20 49 111 153 0.34 0.28 0.16 0.09 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag MSG MAG 10 S21 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 3 5 4 FREQUENCY (GHz) Figure 23. AT-32011 Gains vs. Frequency at VCE␣ = 5 V, I C␣ = 2 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 5 V, IC = 2 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.94 0.69 0.45 0.40 0.23 0.17 0.15 0.14 0.20 0.31 0.38 -13 -54 -82 -89 -121 -147 -167 151 109 76 55 16.56 14.34 11.62 11.03 8.33 7.04 6.36 5.06 3.52 1.66 0.26 6.73 5.21 3.81 3.56 2.61 2.25 2.08 1.79 1.50 1.21 1.03 167 128 102 98 77 68 62 51 37 19 5 -35.39 -23.74 -20.92 -20.35 -18.49 -17.39 -16.59 -15.14 -12.92 -9.55 -6.80 0.017 0.065 0.090 0.096 0.119 0.135 0.148 0.175 0.226 0.333 0.457 82 62 56 55 56 58 59 60 59 53 42 0.99 0.85 0.73 0.72 0.66 0.65 0.63 0.62 0.61 0.59 0.55 -5 -21 -28 -30 -35 -37 -40 -44 -53 -70 -90 30 AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA Fmin dB Mag Ang Rn – 0.5[1] 0.9 1.8 2.4 0.52 0.75 1.26 1.60 0.79 0.65 0.33 0.39 15 48 127 -166 0.42 0.30 0.11 0.07 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 4-60 20 GAIN (dB) Γopt Freq. GHz MSG MAG 10 S21 0 0 1 MSG 2 3 4 5 FREQUENCY (GHz) Figure 24. AT-32033 Gains vs. Frequency at VCE␣ = 5 V, I C␣ = 2 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 5 V, IC = 20 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.58 0.35 0.31 0.30 0.29 0.30 0.30 0.32 0.35 0.41 0.48 -43 -128 -161 -167 170 158 151 138 121 98 83 31.28 23.51 18.93 18.06 14.74 13.22 12.35 10.85 8.99 6.64 4.90 36.64 14.99 8.84 8.00 5.46 4.58 4.15 3.49 2.82 2.15 1.76 151 103 87 84 72 65 61 53 42 25 9 -38.13 -29.05 -25.30 -24.57 -21.50 -20.06 -19.23 -17.77 -16.03 -13.85 -12.12 0.012 0.035 0.054 0.059 0.084 0.099 0.109 0.129 0.158 0.203 0.248 72 62 64 64 63 61 60 57 52 42 33 0.83 0.42 0.33 0.32 0.30 0.29 0.29 0.28 0.27 0.25 0.24 -21 -40 -40 -40 -44 -47 -50 -56 -64 -80 -100 30 AT-32011 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 1.38 1.50 1.78 1.96 0.18 0.15 0.23 0.34 MSG Ang Rn – 50 88 176 -156 0.20 0.16 0.13 0.12 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA Γopt Freq. Fmin GHz dB Mag MAG S21 10 MSG 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 4 3 5 FREQUENCY (GHz) Figure 25. AT-32011 Gains vs. Frequency at VCE␣ = 5 V, IC␣ = 20 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. S11 S21 VCE = 5 V, IC = 20 mA S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.55 0.20 0.13 0.12 0.10 0.09 0.10 0.11 0.13 0.18 0.22 -31 -44 -31 -28 -7 5 13 25 36 42 43 30.00 19.91 15.15 14.30 11.03 9.63 8.82 7.49 5.93 4.19 2.98 31.61 9.90 5.72 5.19 3.56 3.03 2.76 2.37 1.98 1.62 1.41 138 95 82 79 68 61 57 50 39 23 8 -37.72 -25.85 -21.01 -20.18 -16.77 -15.19 -14.33 -12.77 -10.90 -8.50 -6.65 0.013 0.051 0.089 0.098 0.145 0.174 0.192 0.230 0.285 0.376 0.465 78 77 75 74 69 66 64 60 54 43 31 0.81 0.56 0.53 0.53 0.52 0.51 0.50 0.49 0.47 0.42 0.37 -16 -19 -22 -23 -30 -33 -36 -42 -51 -67 -86 30 AT-32033 Typical Noise Parameters, 0.5[1] 0.9 1.8 2.4 1.38 1.50 1.78 1.96 0.25 0.19 0.21 0.39 Ang Rn – 35 85 -150 -114 0.30 0.23 0.14 0.19 20 GAIN (dB) Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA Γopt Freq. Fmin GHz dB Mag MAG 10 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. MSG S21 0 1 2 3 4 5 FREQUENCY (GHz) 4-61 Figure 26. AT-32033 Gains vs. Frequency at VCE␣ = 5 V, I C␣ = 20 mA. Ordering Information Part Number Increment Comments AT-32011-BLK AT-32011-TR1 100 3000 Bulk 7" Reel AT-32033-BLK AT-32033-TR1 100 3000 Bulk 7" Reel Package Dimensions SOT-143 Plastic Package SOT-23 Plastic Package 0.92 (0.036) 0.78 (0.031) PACKAGE MARKING CODE 1.02 (0.040) 0.89 (0.035) 0.54 (0.021) 0.37 (0.015) C E 1.40 (0.055) 1.20 (0.047) XXX B C 2.65 (0.104) 2.10 (0.083) PACKAGE MARKING CODE E 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) B 0.54 (0.021) 0.37 (0.015) 1.40 (0.055) 1.20 (0.047) XXX 2.65 (0.104) 2.10 (0.083) E 2.04 (0.080) 1.78 (0.070) 0.60 (0.024) 0.45 (0.018) TOP VIEW TOP VIEW 0.15 (0.006) 0.09 (0.003) 3.06 (0.120) 2.80 (0.110) 3.06 (0.120) 2.80 (0.110) 1.02 (0.041) 0.85 (0.033) 1.02 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) 0.152 (0.006) 0.066 (0.003) 0.69 (0.027) 0.45 (0.018) SIDE VIEW 0.69 (0.027) 0.45 (0.018) 0.10 (0.004) 0.013 (0.0005) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) SIDE VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-62 END VIEW