BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 194 SOT-223 BFG194 Q62702-F1321 1=E 2=B 3=E 4=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 Base current IB 10 Total power dissipation Ptot TS ≤ 75 °C Values Unit V mA mW 1000 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 75 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Aug-22-1996 BFG 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current 15 - 100 IEBO µA - - 1 hFE IC = 70 mA, VCE = 8 V Semiconductor Group nA - VEB = 2 V, IC = 0 DC current gain - ICBO VCB = 10 V, IE = 0 Emitter-base cutoff current V 15 2 50 - Aug-22-1996 BFG 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 3.5 pF - 1.4 2 - 0.4 - - 4.7 - Cce VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Emitter-base capacitance 5 Ccb VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz F Noise figure dB IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2.8 - f = 1.8 GHz - 4.7 - f = 900 MHz - 11 - f = 1.8 GHz - 6.5 - f = 900 MHz - 8 - f = 1.8 GHz - 3 - Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 70 mA, VCE = 8 V, ZS = 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Aug-22-1996 BFG 194 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 800 TS 700 600 500 400 TA 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 RthJS 10 2 Ptotmax/P totDC - K/W 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Aug-22-1996 BFG 194 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 5.5 4.0 GHz pF Ccb fT 3.0 10V 8V 4.5 5V 4.0 2.5 3V 3.5 2.0 2V 3.0 1V 1.5 2.5 1.0 2.0 0.5 0.7V 1.5 0.0 1.0 0 4 8 12 16 V VR 22 0 20 40 60 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 12 80 mA IC 120 7.0 10V 5V 10V dB 5V dB G G 3V 5.0 3V 4.0 2V 2V 8 6 3.0 1V 2.0 1V 4 0.7V 1.0 2 0.7V 0.0 0 0 20 Semiconductor Group 40 60 80 mA IC 120 5 -1.0 0 20 40 60 80 mA IC 120 Aug-22-1996 BFG 194 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 12 dB 42 0.9GHz IC=70mA dBm 8V 38 10 G IP3 9 0.9GHz 36 34 8 5V 3V 32 30 7 1.8GHz 2V 28 6 26 5 24 4 22 3 20 1V 18 2 16 1 14 12 0 0 0 2 4 6 8 V 12 20 40 60 80 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 30 mA IC 120 28 IC=70mA dB dB IC=70mA 24 G S21 22 20 20 18 16 15 14 12 10 10 8 5 0.7 0 -5 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 10V 2V 1V 6 4 2 GHz f 0 -2 0.0 3.5 6 1V 0.7V 0.5 1.0 2V 1.5 10V 2.0 GHz f 3.0 Aug-22-1996 BFG 194 Package Semiconductor Group 7 Aug-22-1996