PHILIPS BFG540W/X

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Product specification
Supersedes data of August 1995
File under Discrete Semiconductors, SC14
1997 Dec 04
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MARKING
FEATURES
• High power gain
TYPE NUMBER
• Low noise figure
BFG540W
N9
• High transition frequency
BFG540W/X
N7
• Gold metallization ensures
excellent reliability.
BFG540W/XR
N8
CODE
page
PINNING
APPLICATIONS
4
3
1
2
Top view
They are intended for applications in
the RF front end, in wideband
applications in the GHz range such as
analog and digital cellular telephones,
cordless telephones (CT2, CT3,
PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343N and SOT343R
packages.
PIN
MSB014
DESCRIPTION
BFG540W (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
Fig.1 SOT343N.
BFG540W/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
page
BFG540W/XR (see Fig.2)
1
collector
2
emitter
3
base
4
emitter
3
4
2
1
Top view
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
IC
collector current (DC)
−
−
120
mA
mW
Ptot
total power dissipation
up to Ts = 85 °C
−
−
500
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.5
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C −
16
−
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C
10
−
dB
|s21|2
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 14
15
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz
2.1
−
dB
1997 Dec 04
2
−
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
120
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
up to Ts = 85 °C; see Fig.3; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
up to Ts = 85 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P tot
(mW)
400
200
0
0
50
100
150
o
200
T s ( C)
VCE ≤ 10 V.
Fig.3 Power derating curve.
1997 Dec 04
3
VALUE
UNIT
180
K/W
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC = 10 µA ; IE = 0
20
−
−
V
V(BR)CES
collector-emitter breakdown
voltage
RBE = 0; IC = 40 µA
15
−
−
V
V(BR)EBO
emitter-base breakdown
voltage
open collector; IE = 100 µA; IC = 0
2.5
−
−
V
ICBO
collector cut-off current
open emitter; VCB = 8 V; IE = 0
−
−
50
nA
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.9
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
2
−
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.5
−
pF
GUM
maximum unilateral power
gain; note 1
IC = 40 mA; VCE = 8 V; f = 900 MHz; −
Tamb = 25 °C
16
−
dB
−
10
−
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
|s21|2
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; 14
Tamb = 25 °C
15
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz
−
2.1
−
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; f = 900 MHz; −
RL = 50 Ω; Tamb = 25 °C
21
−
dBm
ITO
third order intercept point
note 2
−
34
−
dBm
Vo
output voltage
note 3
−
500
−
mV
d2
second order intermodulation
distortion
note 4
−
−50
−
dB
Notes
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; Tamb = 25 °C;
a) fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.
3. dim = −60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; VCE = 8 V; IC = 40 mA;
a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 Ω; Tamb = 25 °C;
a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
1997 Dec 04
4
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MRA749
250
hFE
Cre
(pF)
200
0.8
150
0.6
100
0.4
50
0.2
0
10−2
10−1
1
10
IC (mA)
0
102
0
VCE = 8 V.
DC current gain as a function of
collector current; typical values.
Fig.5
MLC044
12
handbook, halfpage
fT
(GHz)
VCE = 8 V
8
VCE = 4 V
4
0
10 1
1
10
2
I C (mA) 10
f = 1 GHz; Tamb = 25 °C.
1997 Dec 04
4
8
VCB (V)
12
IC = 0; f = 1 MHz.
Fig.4
Fig.6
MRA750
1
handbook, halfpage
handbook, halfpage
Transition frequency as a function of
collector current; typical values.
5
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MLC045
30
MLC046
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
20
20
MSG
G max
G UM
10
G max
G UM
10
0
0
0
10
20
50
40
I C (mA)
30
0
f = 900 MHz; VCE = 8 V.
Fig.7
20
50
40
I C (mA)
30
f = 2 GHz; VCE = 8 V.
Gain as a function of collector current;
typical values.
Fig.8
MLC047
50
Gain as a function of collector current;
typical values.
MLC048
50
handbook, halfpage
handbook, halfpage
gain
(dB)
10
gain
(dB)
G UM
40
40
G UM
MSG
MSG
30
30
20
20
10
10
G max
0
G max
0
10
10
2
10
3
f (MHz)
10
4
10
IC = 10 mA; VCE = 8 V.
Fig.9
1997 Dec 04
10
2
10
3
f (MHz)
10
IC = 40 mA; VCE = 8 V.
Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
6
4
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MEA973
−20
dim
MEA972
−20
d2
handbook, halfpage
handbook, halfpage
(dB)
−30
(dB)
−30
−40
−40
−50
−50
−60
−60
−70
10
20
30
40
50
−70
10
60
IC (mA)
Vo = 500 mV; f(p + q − r) = 793.25 MHz; VCE = 8 V; Tamb = 25 °C;
RL = 75 Ω.
30
40
50
60
IC (mA)
Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 °C; RL = 75 Ω.
Fig.11 Intermodulation distortion as a function
of collector current; typical values.
Fig.12 Second order intermodulation distortion as a
function of collector current; typical values.
MLC049
4
20
MRA760
5
handbook, halfpage
handbook, halfpage
Fmin
(dB)
4
F
(dB)
f = 900 MHz
1000 MHz
3
f = 2000 MHz
Gass
3
2000 MHz
20
Gass
(dB)
15
10
2
2000 MHz
1000 MHz
900 MHz
500 MHz
1
5
2
1000 MHz
900 MHz
500 MHz
1
0
1
10
I C (mA)
0
0
102
1
VCE = 8 V.
10
IC (mA)
−5
102
VCE = 8 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
1997 Dec 04
Fmin
Fig.14 Associated available gain as a function of
collector current; typical values.
7
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MLC050
4
MRA761
5
handbook, halfpage
handbook, halfpage
Fmin
F
(dB)
IC = 10 mA
(dB)
4
I C = 40 mA
40 mA
20
Gass
(dB)
15
Gass
3
10 mA
3
10
2
5
2
40 mA
1
1
0
10 2
10 3
f (MHz)
0
102
10 4
VCE = 8 V.
Fmin
0
103
f (MHz)
−5
104
VCE = 8 V.
Fig.15 Minimum noise figure as a function
of frequency; typical values.
1997 Dec 04
10 mA
Fig.16 Associated available gain as a function
of frequency; typical values.
8
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
handbook, full pagewidth
90 o
stability
circle
1.0
1
135 o
45 o
2
0.5
0.8
0.6
unstable
region
0.2
0.4
5
F min = 1.3 dB
Γ opt
180 o
0.2
0
0.5
1
0.2
2
5
0o
0
F = 1.5 dB
F = 2 dB
0.2
5
F = 3 dB
0.5
2
135 o
45 o
1
MLC051
1.0
90 o
f = 900 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.17 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
Γ opt
1
2
5
0o
F min = 2.1 dB
0
G max = 9.8 dB G = 9 dB
G = 8 dB
0.2
5
F = 1.5 dB
F = 3 dB
F = 4 dB
0.5
2
135 o
45 o
1
MLC052
f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
90 o
Fig.18 Common emitter noise figure circles; typical values.
1997 Dec 04
9
1.0
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
3 GHz
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
0.2
5
40 MHz
0.5
2
135 o
0o
0
5
45 o
1
MLC053
1.0
90 o
VCE = 8 V; IC = 40 mA; Zo = 50 Ω.
Fig.19 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
3 GHz
50
40
30
20
0o
10
135 o
45 o
90 o
MLC054
VCE = 8 V; IC = 40 mA.
Fig.20 Common emitter forward transmission coefficient (s21); typical values.
1997 Dec 04
10
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
90 o
handbook, full pagewidth
3 GHz
135
o
45 o
40 MHz
180 o
0.25
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MLC055
VCE = 8 V; IC = 40 mA.
Fig.21 Common emitter reverse transmission coefficient (s12); typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
3 GHz
40 MHz
0.2
0.5
2
135 o
5
45 o
1
MLC056
1.0
90 o
VCE = 8 V; IC = 40 mA; Zo = 50 Ω.
Fig.22 Common emitter output reflection coefficient (s22); typical values.
1997 Dec 04
11
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
SPICE parameters for the BFG540W crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
PARAMETER
VALUE
UNIT
VJS
750.0
mV
MJS
0.000
−
FC
0.814
−
1
IS
1.045
fA
36
(1)
2
BF
184.3
−
37
(1)
3
NF
0.981
−
38
4
VAF
41.69
V
Note
5
IKF
10.00
A
6
ISE
232.4
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
2.028
−
8
BR
43.99
−
9
NR
0.992
−
10
VAR
2.097
V
11
IKR
166.2
mA
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
C
12
ISC
129.8
aA
13
NC
1.064
−
14
RB
5.000
Ω
15
IRB
1.000
µA
16
RBM
5.000
Ω
17
RE
353.5
mΩ
RC
1.340
Ω
XTB
0.000
−
20 (1)
EG
1.110
eV
21 (1)
XTI
3.000
−
22
CJE
1.978
pF
23
VJE
600.0
mV
24
MJE
0.332
−
25
TF
7.457
ps
26
XTF
11.40
−
27
VTF
3.158
V
28
ITF
156.9
mA
Cbe
70
fF
29
PTF
0.000
deg
Ccb
50
fF
30
CJC
793.7
fF
Cce
115
fF
31
VJC
185.5
mV
L1
0.34
nH
32
MJC
0.084
−
L2
0.10
nH
33
XCJC
0.150
−
L3
0.25
nH
34
TR
1.598
ns
LB
0.40
nH
35 (1)
CJS
0.000
F
LE
0.40
nH
18
19
(1)
1997 Dec 04
C be
E'
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.23 Package equivalent circuit
SOT343N; SOT343R.
List of components (see Fig.23).
DESIGNATION
12
VALUE
UNIT
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343N
1997 Dec 04
EUROPEAN
PROJECTION
13
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343R
1997 Dec 04
EUROPEAN
PROJECTION
14
Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 04
15
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Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127127/00/03/pp16
Date of release: 1997 Dec 04
Document order number:
9397 750 03146