CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP3906A3 Description • High Cutoff Frequency. • Complementary to BTN3904A3. Symbol Outline BTP3906A3 TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTP3906N3 Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -40 -40 -5 -200 625 200 150 -55~+150 Unit V V V mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(sat) *hFE *hFE *hFE *hFE *hFE fT Cob Min. -40 -40 -5 -0.65 60 80 100 60 30 250 - Typ. -0.05 -0.12 -0.76 -0.88 - Max. -50 -50 -0.25 -0.4 -0.85 -0.95 300 4.5 Unit V V V nA nA V V V V MHz pF Test Conditions IC=-10µA IC=-1mA IE=-10µA VCE=-30V, VBE=3V VEB=-4V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-1V, IC=-100µA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTP3906N3 CYStek Product Specification Spec. No. : C318N3-H Issued Date : 2002.06.11 CYStech Electronics Corp. Revised Date : 2002.11.01 Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Saturation Voltage-(mV) Current Gain---HFE HFE@VCE=1V 100 10 100 10 0.1 1 10 100 1000 0.1 1 10 Collector Current--- IC(mA) Collector Current IC-(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 10000 1000 1000 VBE(SAT)@IC=10IB VCE=20V Cutoff Frequency(MHz) Saturation Voltage-(mV) 100 1000 100 100 0.1 1 10 100 1000 1 10 100 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTP3906N3 CYStek Product Specification Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension Marking: α2 A B 1 2 3 P3906 α3 C D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP3906N3 CYStek Product Specification