CYSTEKEC BTPA92A3

Spec. No. : C308A3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTPA92A3
Description
• High breakdown voltage. (BVCEO=-300V)
• Low collector output capacitance.
• Ideal for chroma circuit.
Symbol
Outline
BTPA92A3
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTPA92A3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
-300
-300
-5
-500
625
200
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C308A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-300
-300
-5
25
56
25
50
-
Typ.
-
Max.
-0.25
-0.1
-0.5
-0.9
270
6
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-100µA
VCB=-200V
VEB=-3V
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
K
56~120
Range
P
Q
82~180
120~270
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=10V
100
10
100
10
0.1
1
10
Collector Current---IC(mA)
BTPA92A3
1000
100
0.1
1
10
100
Collector Current---IC(mA)
CYStek Product Specification
Spec. No. : C308A3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Revised Date :
Page No. : 3/4
Cutoff Frequency vs Collector Current
Cutoff Frequency---FT(GHZ)
1
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
100
[email protected]=30V
0.1
0.1
1
10
100
1000
Collector Current---IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTPA92A3
CYStek Product Specification
Spec. No. : C308A3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
TO-92 Dimension
α2
A
Marking:
B
1
2
3
A92
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTPA92A3
CYStek Product Specification