SSM2301N
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Small package outline
D
Surface-mount device
BV DSS
-20V
R DS(ON)
130mΩ
-2.3A
ID
S
SOT-23
Description
G
D
Power MOSFETs from Silicon Standard Corp. provide the
designer with the best combination of fast switching, low
on-resistance and cost-effectiveness.
G
S
The SOT-23 package is widely preferred for commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID @ TA=25°C
ID @ TA=70°C
Rating
Units
- 20
V
± 12
V
3
-2.3
A
3
-1.5
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-10
A
PD @ TA=25°C
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-amb
Rev.2.02 3/11/2004
Parameter
Thermal Resistance Junction-ambient
3
Max.
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Value
Unit
100
°C/W
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SSM2301N
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆T j
RDS(ON)
-20
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
-
-0.1
-
V/°C
Static Drain-Source On-Resistance
VGS=-5V, ID=-2.8A
-
-
130
mΩ
VGS=-2.8V, ID=-2.0A
-
-
190
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
VDS=-5V, ID=-2.8A
-
4.4
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=55 C)
VDS=-16V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= ± 8V
-
-
ID=-2.8A
-
5.2
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-6V
-
1.36
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-5V
-
0.6
-
nC
VDS=-6V
-
25
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS=-5V
-
70
-
ns
tf
Fall Time
RD=6Ω
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
295
-
pF
Coss
Output Capacitance
VDS=-6V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25°C, IS=-1.6A, VGS=0V
Min. Typ. Max. Units
-
-
-1.6
A
-
-
-10
A
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t < 5 sec.
Rev.2.02 3/11/2004
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SSM2301N
10
10
o
T C =25 C
T C =150 o C
-5V
-4V
-5V
-4V
8
8
-3V
-ID , Drain Current (A)
-ID , Drain Current (A)
-3V
6
4
2
6
4
V GS = -2V
2
V GS = -2V
0
0
0
2
4
0
6
2
4
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
800
1.8
I D = -2.8A
T C =25 ℃
I D = -2.8A
V GS = -5V
1.6
600
Normalized R DS(ON)
RDS(ON) (Ω )
1.4
400
1.2
1
200
0.8
0
0.6
0
2
4
6
8
10
-50
-25
-V GS (V)
25
50
75
100
125
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
Rev.2.02 3/11/2004
0
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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SSM2301N
3
1.5
2.5
2
0.9
PD (W)
ID , Drain Current (A)
1.2
1.5
0.6
1
0.3
0.5
0
0
25
50
75
100
125
0
150
30
T c , Case Temperature ( o C)
60
90
120
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
100
1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
1ms
10
-ID (A)
10ms
100ms
1
1s
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
T C =25 °C
Single Pulse
Single Pulse
0.01
0
0.1
1
10
100
0.0001
-V DS (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Rev.2.02 3/11/2004
0.001
Fig 8. Effective Transient Thermal Impedance
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4 of 6
SSM2301N
f=1.0MHz
1000
5
I D =-2.8A
V DS =-6V
Ciss
Coss
3
C (pF)
-VGS , Gate to Source Voltage (V)
4
100
Crss
2
1
0
10
0
2
4
6
8
1
4
7
10
13
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
10
1.2
T j =150 o C
T j =25 o C
1
-IS(A)
-VGS(th) (V)
1
0.8
0
0.6
0
0.4
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-50
0
-V SD (V)
100
150
o
T j , Junction Temperature ( C)
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage vs.
Reverse Diode
Rev.2.02 3/11/2004
50
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Junction Temperature
5 of 6
SSM2301N
VDS
90%
RD
VDS
D
TO THE
OSCILLOSCOPE
0.3 x RATED VDS
G
RG
10%
S
VGS
VGS
-5 V
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
TO THE
OSCILLOSCOPE
D
0.3 x RATED VDS
G
S
QG
-5V
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 3/11/2004
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