SSM9916H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
D
Capable of 2.5V gate drive
Low drive current
18V
RDS(ON)
25mΩ
35A
ID
G
Simple drive requirement
BV DSS
S
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
G
D
D
S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
18
V
VGS
Gate-Source Voltage
± 12
V
ID @ TC=25°C
Continuous Drain Current, VGS @ 4.5V
35
A
ID @ TC=125°C
Continuous Drain Current, VGS @ 4.5V
16
A
1
IDM
Pulsed Drain Current
90
A
PD @ TC=25°C
Total Power Dissipation
50
W
Linear Derating Factor
0.4
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.5
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
°C/W
Rev.2.02 1/29/2004
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SSM9916H,J
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/∆ Tj
RDS(ON)
Parameter
Test Conditions
Min.
Typ.
18
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.03
-
V/°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
-
25
mΩ
VGS=2.5V, ID=5.2A
-
-
40
mΩ
VDS=VGS, ID=250uA
0.5
-
1
V
VDS=10V, ID=6A
-
18
-
S
VDS=18V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=18V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID=18A
-
17.5
-
nC
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=18V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
7.9
-
nC
VDS=10V
-
7.3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
98
-
ns
td(off)
Turn-off Delay Time
RG=3.3 Ω ,VGS=5V
-
25.6
-
ns
tf
Fall Time
RD=0.56Ω
-
98
-
ns
Ciss
Input Capacitance
VGS=0V
-
527
-
pF
Coss
Output Capacitance
VDS=18V
-
258
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
112
-
pF
Min.
Typ.
-
-
35
A
-
-
90
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
1
Tj=25°C, IS=35A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.02 1/29/2004
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SSM9916H,J
80
100
T C =25 o C
V G =4.5V
T C =150 o C
70
V G =4.5V
80
ID , Drain Current (A)
ID , Drain Current (A)
60
V G =3.5V
60
V G =2.5V
40
V G =3.5V
50
40
V G =2.5V
30
20
20
V G =1.5V
V G =1.5V
10
0
0
0
1
2
3
4
5
6
0
7
1
Fig 1. Typical Output Characteristics
3
4
5
6
7
8
Fig 2. Typical Output Characteristics
1.8
30
I D= 6 A
I D =6A
1.6
o
28
T C =25 C
Normalized R DS(ON)
26
RDSON (mΩ )
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
24
22
20
V G =4.5V
1.4
1.2
1.0
0.8
18
0.6
1
2
3
4
5
6
-50
0
Fig 3. On-Resistance vs. Gate Voltage
Rev.2.02 1/29/2004
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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SSM9916H,J
60
40
35
50
40
25
PD (W)
ID , Drain Current (A)
30
20
30
15
20
10
10
5
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
1000
1
Normalized Thermal Response (R thjc)
DUTY=0.5
100
ID (A)
10us
100us
1ms
10
10ms
100ms
1
0.2
0.1
0.05
0.1
0.02
PDM
SINGLE PULSE
0.01
t
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
T c =25 o C
Single Pulse
0.1
0.01
0.1
1
10
100
0.00001
0.0001
V DS (V)
Fig 7. Maximum Safe Operating Area
Rev.2.02 1/29/2004
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
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SSM9916H,J
f=1.0MHz
16
1000
I D =18A
VGS , Gate to Source Voltage (V)
14
Ciss
V DS =10V
12
Coss
V DS =15V
10
C (pF)
V DS =18V
8
Crss
100
6
4
2
0
0
5
10
15
20
25
30
35
40
45
10
1
Q G , Total Gate Charge (nC)
5
Fig 9. Gate Charge Characteristics
9
13
V DS (V)
17
21
25
Fig 10. Typical Capacitance Characteristics
100
1.2
10
0.95
T j =150 o C
VGS(th) (V)
IS (A)
T j =25 o C
1
0.7
0.45
0.1
0.2
0.01
0
0.4
0.8
1.2
1.6
-50
0
Fig 11. Forward Characteristic of
Reverse Diode
Rev.2.02 1/29/2004
50
100
T j , Junction Temperature ( o C )
V SD (V)
150
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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SSM9916H,J
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
5v
VGS
-
td(on) tr
Fig 13. Switching Time Circuit
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
5V
RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 1/29/2004
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