SSM9928O
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D1
Low on-resistance
G1
D2
G2
Capable of 2.5V gate drive
Optimal DC/DC battery application
S1
S2
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, ultra low on-resistance
BVDSS
20V
RDS(ON)
23mΩ
ID
and cost-effectiveness.
5A
G2
S2
Pb-free; RoHS-compliant
D2
S2
TSSOP-8
S1
G1
S1
D1
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
3
ID@TA=25℃
Drain Current , VGS @ 4.5V
5
A
ID@TA=70℃
3
3.5
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
25
A
PD@TA=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL
DATA
T
Symbol
Rthj-a
03/11/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3
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Max.
Value
Unit
125
℃/W
1
SSM9928O
ELECTRICAL CHARACTERISTICS
Symbol
o
@Tj=25 C(unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.02
-
V/℃
VGS=4.5V, ID=5A
-
-
23
mΩ
VGS=2.5V, ID=2A
-
-
29
mΩ
0.5
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
VDS=10V, ID=5A
-
21
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
ID=5A
-
15.9
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.4
-
nC
VDS=10V
-
6.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=4.5V
-
30
-
ns
tf
Fall Time
RD=10Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
530
-
pF
Coss
Output Capacitance
VDS=20V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
125
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
0.83
A
Tj=25℃,IS=5A,VGS=0V
-
-
1.2
V
SOURCE-DRAIN DIODE
Symbol
IS
VSD
Parameter
Test Conditions
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
03/11/2007 Rev.1.00
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2
SSM9928O
30
30
4.5V
3.5V
3.0V
2.5V
ID , Drain Current (A)
ID , Drain Current (A)
4.5V
3.5V
3.0V
2.5V
20
V GS =2.0V
10
20
V GS =2.0V
10
T C =150 o C
T C =25 o C
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
95
1.9
I D = 5A
I D = 5A
V GS = 4.5V
T C =25 o C
1.5
RDS(ON) (mΩ )
Normalized R DS(ON)
65
35
1.1
0.7
0.3
5
1
2
3
4
5
6
-50
0
Fig 3. On-Resistance v.s. Gate Voltage
03/11/2007 Rev.1.00
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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3
SSM9928O
A
1.2
6
5
4
PD (W)
ID , Drain Current (A)
0.9
3
0.6
2
0.3
1
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100us
10
ID (A)
1ms
10ms
1
100ms
0.1
1s
o
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=208 oC/W
T C =25 C
Single Pulse
DC
0.001
0.01
0.1
1
10
100
0.0001
V DS (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
03/11/2007 Rev.1.00
0.001
Fig 8. Effective Transient Thermal Impedance
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4
SSM9928O
f=1.0MHz
10000
8
I D =5A
VGS , Gate to Source Voltage (V)
7
6
V DS =10V
V DS =15V
V DS =20V
1000
Ciss
C (pF)
5
4
Coss
Crss
3
100
2
1
10
0
0
5
10
15
20
1
25
7
Fig 9. Gate Charge Characteristics
1.6
10
1.2
T j =25 o C
VGS(th) (V)
IS (A)
19
25
Fig 10. Typical Capacitance Characteristics
100
T j =150 o C
13
V DS (V)
Q G , Total Gate Charge (nC)
1
0.8
0.4
0.1
0
0.01
0.2
0.5
0.8
1.1
-50
0
50
100
150
Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
03/11/2007 Rev.1.00
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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5
A
SSM9928O
VDS
RD
90%
VDS
D
RG
G
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
10%
VGS
S
+
VGS
4.5V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
4.5V
G
0.5 x RATED VDS
S
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
03/11/2007 Rev.1.00
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6