SSM9926O
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
A
PRODUCT SUMMARY
D2
D1
Low on-resistance
Capable of 2.5V gate drive
G2
G1
Low drive current
S1
S2
Surface mount package
DESCRIPTION
BVDSS
20V
The Advanced Power MOSFETs from Silicon Standard Corp.
RDS(ON)
28mΩ
provide the designer with the best combination of fast switching,
ID
4.6A
8
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
D2
S2
Pb-free; RoHS-compliant
TSSOP-8
S1
G1
S1
D1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
V
3
4.6
A
3
3.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL
DATA
T
Symbol
Rthj-a
03/11/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3
www.SiliconStandard.com
Max.
Value
Unit
125
℃/W
1
SSM9926O
A
ELECTRICAL CHARACTERISTICS@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.1
-
V/℃
VGS=4.5V, ID=4A
-
23
28
mΩ
VGS=2.5V, ID=2A
-
-
40
mΩ
0.5
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
VDS=10V, ID=4.6A
-
9.7
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 8V
-
-
±100
nA
ID=4.6A
-
12.5
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
6.5
-
nC
VDS=10V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
14.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
19
-
ns
tf
Fall Time
RD=10Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
355
-
pF
Coss
Output Capacitance
VDS=20V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
0.83
A
Tj=25℃,IS=1.25A,VGS=0V
-
-
1.2
V
SOURCE-DRAIN DIODE
Symbol
IS
VSD
Parameter
Test Conditions
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
03/11/2007 Rev.1.00
www.SiliconStandard.com
2
SSM9926O
25
25
4.5V
4.0V
3.5V
3.0V
20
ID , Drain Current (A)
ID , Drain Current (A)
20
2.5V
15
10
2.5V
15
10
V GS =2.0V
V GS =2.0V
5
4.5V
4.0V
3.5V
3.0V
5
T C =150 o C
T C =25 o C
0
0
0
0.5
1
1.5
2
2.5
0
3
0.5
Fig 1. Typical Output Characteristics
1.5
2
2.5
3
Fig 2. Typical Output Characteristics
45
1.8
I D = 4A
I D = 4A
T C =25 o C
V GS =4.5V
1.6
Normalized R DS(ON)
40
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
35
30
1.4
1.2
1.0
25
0.8
0.6
20
1
2
3
4
5
6
-50
0
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
03/11/2007 Rev.1.00
50
o
V GS (V)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
www.SiliconStandard.com
3
SSM9926O
6
1.2
5
1
4
0.8
PD (W)
ID , Drain Current (A)
A
3
0.6
2
0.4
1
0.2
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100us
10
ID (A)
1ms
1
10ms
100ms
0.1
1s
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=208 oC/W
DC
0.001
0.01
0.1
1
10
100
0.0001
V DS (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
03/11/2007 Rev.1.00
0.001
Fig 8. Effective Transient Thermal Impedance
www.SiliconStandard.com
4
SSM9926O
f=1.0MHz
1000
12
I D =4.6A
VGS , Gate to Source Voltage (V)
10
Ciss
V DS =10V
V DS =15V
8
Coss
C (pF)
V DS =20V
6
100
Crss
4
2
10
0
0
5
10
15
20
1
25
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.6
100
1.4
10
1.2
T j =150 o C
VGS(th) (V)
IS (A)
T j =25 o C
1
1
0.8
0.6
0.1
0.4
0.2
0.01
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
03/11/2007 Rev.1.00
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
www.SiliconStandard.com
5
SSM9926O
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
5v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
5V
RATED VDS
G
S
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
03/11/2007 Rev.1.00
www.SiliconStandard.com
6