SSM9985GM
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low On-Resistance
Fast Switching Speed
Surface Mount Package
D
D
D
D
S
40V
RDS(ON)
15mΩ
ID
G
SO-8
BVDSS
10A
S
S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, ultra low on-resistance
and cost-effectiveness.
D
G
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
± 20
V
Continuous Drain Current
3
10
A
Continuous Drain Current
3
8
A
48
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Rthj-amb
10/31/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3
Max.
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Value
Unit
50
℃/W
1
SSM9985GM
ELECTRICAL CHARACTERISTICS
o
(TJ=25 C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.032
-
V/℃
VGS=10V, ID=10A
-
-
15
mΩ
VGS=4.5V, ID=5A
-
-
25
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=10V, ID=10A
-
35
-
S
o
VDS=40V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
14.7
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
7.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.8
-
nC
VDS=20V
-
11.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6.3
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
28.2
-
ns
tf
Fall Time
RD=20Ω
-
12.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1725
-
pF
Coss
Output Capacitance
VDS=25V
-
235
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Min.
Typ.
VD=VG=0V , VS=1.3V
-
-
1.92
A
Tj=25℃, IS=2.3A, VGS=0V
-
-
1.3
V
SOURCE-DRAIN DIODE
Symbol
IS
VSD
Parameter
Test Conditions
Continuous Source Current ( Body Diode )
Forward On Voltage
2
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
10/31/2007 Rev.1.00
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2
SSM9985GM
50
45
10V
6.0V
5.0V
T C =25 o C
10V
6.0V
5.0V
4.5V
T C =150 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
4.5V
30
20
V GS =4.0V
30
V GS =4.0V
15
10
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =10A
T C =25 ℃
I D =10A
V GS =10V
Normalized RDS(ON)
RDS(ON) (mΩ )
60
40
1.4
0.8
20
0
0.2
2
4
6
8
10
12
-50
0
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
10/31/2007 Rev.1.00
50
o
V GS (V)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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3
SSM9985GM
12
3
ID , Drain Current (A)
10
8
PD (W)
2
6
4
1
2
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C)
100
150
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
T C =25 o C
Single Pulse
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100us
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=125 oC/W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
10/31/2007 Rev.1.00
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4
SSM9985GM
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D =10A
Ciss
9
V DS =12V
V DS =16V
VDS =20V
C (pF)
1000
6
Coss
Crss
100
3
0
10
0
5
10
15
20
25
1
7
13
19
25
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3.5
100
3
10
2.5
o
o
Tj=25 C
VGS(th) (V)
IS(A)
Tj=150 C
1
2
1.5
0.1
1
0.5
0.01
0
0.4
0.8
1.2
-50
Fig 11. Forward Characteristic of
Reverse Diode
10/31/2007 Rev.1.00
0
50
100
150
T j , Junction Temperature ( o C )
V SD (V)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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5
SSM9985GM
VDS
90%
RD
VDS
D
0.5 x RATED V DS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
10 v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
4.5V
0.5 x RATED V DS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
I
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
10/31/2007 Rev.1.00
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6