CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN2572H8 BVDSS 150V ID VGS=10V, ID=20A 32A 36mΩ VGS=10V, ID=12A 36mΩ VGS=6V, ID=6A 38mΩ RDSON(TYP) Description The MTN2572H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol Outline DFN5×6 MTN2572H8 Pin 1 G：Gate D：Drain S：Source MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 2/11 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=30A, VDD=25V Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS (Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) ID IDSM IDM IAS EAS EAR PD PDSM Tj, Tstg Limits Unit 150 ±20 32 23 5.2 *3 4.2 *3 60 *1 30 45 22.5 *2 94 47 2.5 1.6 -55~+175 V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC (Note 2) RθJA (Note 4) RθJA Value 1.6 50 125 Unit °C/W °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. Ordering Information Device MTN2572H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 3/11 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 150 1.5 - 0.1 2.8 35 36 36 38 4 ±100 1 25 45 45 48 V V/°C V S nA VGS=0, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±20V VDS =120V, VGS =0 VDS =120V, VGS =0, Tj=125°C VGS =10V, ID=20A VGS =10V, ID=12A VGS =6V, ID=6A - 2249 225 118 30 10 8 13 12 47 20 2 - Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 0.79 120 380 32 60 1.3 - Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg μA mΩ pF VGS=0V, VDS=25V, f=1MHz nC ID=20A, VDS=80V, VGS=10V ns VDS=75V, ID=1A, VGS=10V, RG=6Ω Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IS=12A, VGS=0V IF=25A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 4/11 Recommended Soldering Footprint unit : mm MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 5/11 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.6 10V, 9V, 8V, 7V, 6V 50 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage 60 40 VGS=5V 30 20 1.4 1.2 1 0.8 ID=250μA, VGS=0V 0.6 10 VGS=4V 0.4 -100 0 0 1 2 3 4 VDS , Drain-Source Voltage(V) 5 Static Drain-Source On-State resistance vs Drain Current 200 1.2 VGS=4.5V 5V 6V 7V 8V 9V 10V 100 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 0 50 100 150 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1000 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance 100 R DS(ON), Static Drain-Source OnState Resistance(mΩ) -50 90 ID=20A 80 70 60 50 40 30 20 10 VGS=10V, ID=20A 2 1.6 1.2 0.8 RDSON @ Tj=25°C : 36mΩ typ 0.4 0 0 MTN2572H8 4 8 12 16 VGS, Gate-Source Voltage(V) 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 6/11 Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 Forward Transfer Admittance vs Drain Current 60 80 100 120 140 160 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 20 40 Gate Charge Characteristics 100 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=80V ID=20A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 5 10 15 20 25 30 Total Gate Charge---Qg(nC) 35 40 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 35 10 RDS(ON) Limit 1 100μs 1ms 10ms 100ms 0.1 1s 0.01 TA=25°C, Tj=150°, VGS=10V RθJA=50°C/W, Single Pulse DC ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 30 25 20 15 10 VGS=10V, RθJC=1.6°C/W 5 0 0.001 0.01 MTN2572H8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 7/11 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 60 350 VDS=10V 300 TJ(MAX) =150°C TA=25°C θJA=50°C/W 250 40 Power (W) ID, Drain Current (A) 50 30 20 200 150 100 10 50 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 8/11 Reel Dimension Carrier Tape Dimension MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 9/11 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 10/11 DFN5×6 Dimension (C Forming) Marking : 2572 Device Name Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. MTN2572H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434H8 Issued Date : 2013.09.14 Revised Date : Page No. : 11/11 DFN5×6 Dimension (G Forming) Marking: Device Name 2572 Date Code 8-Lead power pakPlastic PlasticPackage Package 8-Lead DFN5×6 CYStek Package Code: CYS Package Code : H8H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.40 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.055 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 4.00 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.157 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2572H8 CYStek Product Specification