MOSFET SMD Type Dual N-Channel MOSFET AO4832 (KO4832) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V 1.50 0.15 0.21 -0.02 +0.04 ● ID = 10A (VGS = 10V) ● RDS(ON) ＜ 13mΩ (VGS = 10V) ● RDS(ON) ＜ 17.5mΩ (VGS = 4.5V) D1 G1 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D2 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID 8 55 IAS, IAR 22 EAS, EAR 24 RthJA RthJL V 10 IDM PD Unit 2 1.3 A mJ W 62.5 90 ℃/W 40 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual N-Channel MOSFET AO4832 (KO4832) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ 30 Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) ID=250μA, VGS=0V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=10A 1.5 ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=10V, VDS=5V VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A 910 88 160 40 100 0.8 2.4 11 17 5 8 2.4 3 Turn-On Rise Time tr Turn-Off DelayTime td(off) Body Diode Reverse Recovery Charge Qrr IS Diode Forward Voltage VSD Marking 2 4832 KA**** www.kexin.com.cn pF Ω nC 9 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω ns 17 6 IF= 10A, dI/dt= 500A/us 5.6 8 6.4 9.6 nC 2.5 A 1 V IS=1A,VGS=0V Note.The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking S 610 4.4 Maximum Body-Diode Continuous Current mΩ A Qgd trr V 43 td(on) Body Diode Reverse Recovery Time 2.5 55 Gate Drain Charge tf nA 17.5 Turn-On DelayTime Turn-Off Fall Time ±100 19 VDS=5V, ID=10A Qg Qgs uA 13 TJ=125℃ VGS=4.5 V, ID=8A On State Drain Current Unit V VGS=10V, ID=10A Forward Transconductance Max MOSFET SMD Type Dual N-Channel MOSFET AO4832 (KO4832) ■ Typical Characterisitics 100 30 10V 7V 6V ID (A) 60 25 4.5V 20 ID(A) 80 5V 4V 40 VDS=5V 15 125°C 10 3.5V 20 25°C 5 VGS=3V 0 0 1 2 3 4 0 0 5 20 3 4 5 1.6 Normalized On-Resistance Ω) RDS(ON) (mΩ 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 15 10 VGS=10V VGS=10V ID=10A 1.4 1.2 VGS=4.5V ID=8A 1 0.8 5 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 30 100 150 175 125°C 1.0E-01 1.0E-02 1.0E-03 10 125 1.0E+00 IS (A) 25°C 75 1.0E+01 125°C 15 50 1.0E+02 ID=10A 20 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 RDS(ON) (mΩ Ω) 1 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type Dual N-Channel MOSFET AO4832 (KO4832) ■ Typical Characterisitics 10 1200 VDS=15V ID=10A 1000 Capacitance (pF) 8 VGS (Volts) 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics TA=25°C 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 TA=100°C 100.0 10 TA=125°C TA=150°C ID (Amps) IAR (A) Peak Avalanche Current 100 5 RDS(ON) limited 10.0 10µs 100µs 1ms 1.0 TJ(Max)=150°C TA=25°C 0.1 10ms 10s DC 0.0 1 1 0.01 10 100 1000 . Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 1000 MOSFET SMD Type Dual N-Channel MOSFET AO4832 (KO4832) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5