SMD Type MOSFET

MOSFET
SMD Type
N-Channel MOSFET
AO3438 (KO3438)
SOT-23-3
Unit: mm
■ Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
1
● RDS(ON) < 62mΩ (VGS = 4.5V)
0.55
● ID = 3 A (VGS = 4.5V)
+0.2
1.6 -0.1
+0.2
2.8 -0.1
● VDS (V) = 20V
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
● RDS(ON) < 70mΩ (VGS = 2.5V)
1.1
+0.2
-0.1
● RDS(ON) < 85mΩ (VGS = 1.8V)
0-0.1
+0.1
0.68 -0.1
1. Gate
D
2. Source
3. Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
ID
IDM
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
PD
RthJA
Unit
V
3
2.5
A
16
1.4
0.9
W
90
125
RthJC
80
TJ
150
Tstg
-55 to 150
℃/W
℃
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1
MOSFET
SMD Type
N-Channel MOSFET
AO3438 (KO3438)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Test Conditions
ID=250 uA, VGS=0V
Min
Typ
20
1
VDS=20V, VGS=0V, TJ=55℃
5
VDS=0V, VGS=±8V
VDS=VGS , ID=250μA
RDS(On)
VGS=4.5V, ID=3A
0.5
ID(ON)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
VGS=2.5V, ID=2.8A
VGS=4.5V, VDS=5V
VDS=5V, ID=3A
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=3A
3
4.5
3.8
td(off)
VSD
VGS=5V, VDS=10V, RL=3.3Ω,RG=6Ω
Marking
B8**
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3.2
ns
21
3
IF= 3A, dI/dt= 100A/us
IS=1A,VGS=0V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Ω
nC
0.4
Turn-Off DelayTime
IS
pF
2.9
tr
Qrr
320
27
Turn-On Rise Time
Body Diode Reverse Recovery Charge
S
48
2.5
Diode Forward Voltage
2
11
260
VGS=0V, VDS=10V, f=1MHz
mΩ
A
0.6
Maximum Body-Diode Continuous Current
V
85
Qgd
trr
1
16
td(on)
Body Diode Reverse Recovery Time
nA
70
Turn-On DelayTime
tf
±100
85
TJ=125℃
Gate Drain Charge
Turn-Off Fall Time
uA
62
VGS=1.8V, ID=2.5A
On state drain current
Unit
V
VDS=20V, VGS=0V
VGS=4.5V, ID=3A
Static Drain-Source On-Resistance
Max
14
19
3.8
nC
2
A
1
V
MOSFET
SMD Type
N-Channel MOSFET
AO3438 (KO3438)
■ Typical Characterisitics
16
16
VDS=5V
4.5V
12
ID(A)
ID (A)
2V
2.5V
12
8
8
VGS=1.5V
4
4
125°C
25°C
0
0
1
2
3
4
0
5
0
0.5
VDS (Volts)
Figure 1: On-Region Characteristics
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
1.6
Normalized On-Resistance
120
100
RDS(ON) (mΩ )
1
VGS=1.8V
80
VGS=2.5V
60
VGS=1.8V
ID=2A
1.4
VGS=2.5V
ID=2.8A
VGS=4.5V
ID=3A
1.2
1
VGS=4.5V
40
0
3
6
9
0.8
12
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
120
ID=3A
1E+00
125°C
1E-01
80
IS (A)
RDS(ON) (mΩ )
100
125°C
1E-02
25°C
1E-03
60
1E-04
25°C
40
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
SMD Type
N-Channel MOSFET
AO3438 (KO3438)
■ Typical Characterisitics
5
3
2
Ciss
300
Capacitance (pF)
4
VGS (Volts)
400
VDS=10V
ID=3A
200
Coss
100
1
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
1m
s
10ms
RDS(ON)
limited
0.1s
0.10
DC
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
10
1
0.00001
100
.
0.001
0.1
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
0.001
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
TJ(Max)=150°C
TA=25°C
1s
10
VDS (Volts)
1
20
100
0.01
10
15
10µs
100µ
0.1
10
1000
TJ(Max)=150°C
TA=25°C
10.00
1.00
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
100.00
Crss
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100
1000