MOSFET SMD Type N-Channel MOSFET AO3438-HF (KO3438-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 ● RDS(ON) ＜ 62mΩ (VGS = 4.5V) 0.55 ● ID = 3 A (VGS = 4.5V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) = 20V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RDS(ON) ＜ 70mΩ (VGS = 2.5V) +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 85mΩ (VGS = 1.8V) ● Pb−Free Package May be Available. The G−Suffix Denotes a 1. Gate 0-0.1 D 2. Source +0.1 0.38 -0.1 Pb−Free Lead Finish 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 3 2.5 A 16 1.4 0.9 W 90 125 RthJC 80 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3438-HF (KO3438-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ 20 1 VDS=20V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±8V VDS=VGS , ID=250μA RDS(On) VGS=4.5V, ID=3A 0.5 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=2.5V, ID=2.8A VGS=4.5V, VDS=5V VDS=5V, ID=3A VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=3A 3 4.5 3.8 td(off) VSD VGS=5V, VDS=10V, RL=3.3Ω,RG=6Ω Marking B8** F www.kexin.com.cn 3.2 ns 21 3 IF= 3A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Ω nC 0.4 Turn-Off DelayTime IS pF 2.9 tr Qrr 320 27 Turn-On Rise Time Body Diode Reverse Recovery Charge S 48 2.5 Diode Forward Voltage 2 11 260 VGS=0V, VDS=10V, f=1MHz mΩ A 0.6 Maximum Body-Diode Continuous Current V 85 Qgd trr 1 16 td(on) Body Diode Reverse Recovery Time nA 70 Turn-On DelayTime tf ±100 85 TJ=125℃ Gate Drain Charge Turn-Off Fall Time uA 62 VGS=1.8V, ID=2.5A On state drain current Unit V VDS=20V, VGS=0V VGS=4.5V, ID=3A Static Drain-Source On-Resistance Max 14 19 3.8 nC 2 A 1 V MOSFET SMD Type N-Channel MOSFET AO3438-HF (KO3438-HF) ■ Typical Characterisitics 16 16 VDS=5V 4.5V 12 ID(A) ID (A) 2V 2.5V 12 8 8 VGS=1.5V 4 4 125°C 25°C 0 0 1 2 3 4 0 5 0 0.5 VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance 120 100 RDS(ON) (mΩ ) 1 VGS=1.8V 80 VGS=2.5V 60 VGS=1.8V ID=2A 1.4 VGS=2.5V ID=2.8A VGS=4.5V ID=3A 1.2 1 VGS=4.5V 40 0 3 6 9 0.8 12 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 120 ID=3A 1E+00 125°C 1E-01 80 IS (A) RDS(ON) (mΩ ) 100 125°C 1E-02 25°C 1E-03 60 1E-04 25°C 40 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3438-HF (KO3438-HF) ■ Typical Characterisitics 5 3 2 Ciss 300 Capacitance (pF) 4 VGS (Volts) 400 VDS=10V ID=3A 200 Coss 100 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) 1m s 10ms RDS(ON) limited 0.1s 0.10 DC 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 10 1 0.00001 100 . 0.001 0.1 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance TJ(Max)=150°C TA=25°C 1s 10 VDS (Volts) 1 20 100 0.01 10 15 10µs 100µ 0.1 10 1000 TJ(Max)=150°C TA=25°C 10.00 1.00 5 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.00 Crss www.kexin.com.cn 100 1000