MOSFET SMD Type N-Channel MOSFET AO3460 (KO3460) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features ● RDS(ON) ＜ 1.7Ω (VGS = 10V) 1 0.55 ● ID = 0.65 A (VGS = 10V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) = 60V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 2Ω (VGS = 4.5V) 1. Gate 0-0.1 2. Source +0.1 0.38 -0.1 D 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 0.65 0.5 A 1.6 1.4 0.9 W 90 125 RthJC 80 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3460 (KO3460) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions ID=250 uA, VGS=0V Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA Static Drain-Source On-Resistance RDS(On) Min Typ 60 VDS=60V, VGS=0V 1 VDS=60V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=0.65A 1 VGS=10V, VDS=5V VDS=5V, ID=0.65A Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) uA 2.5 V 1.6 A 0.8 S 22 27 VGS=0V, VDS=30V, f=1MHz 6 10 2 6 VGS=0V, VDS=0V, f=1MHz 250 400 0.8 2 0.4 1.5 1 Qgd 0.2 1 Turn-On DelayTime td(on) 5.3 12 Turn-On Rise Time tr 2.8 6 Turn-Off DelayTime td(off) 19.7 30 Gate Drain Charge VGS=10V, VDS=30V, ID=0.65A VGS=10V, VDS=30V, RL=75Ω,RG=3Ω Turn-Off Fall Time tf 5.5 11 Body Diode Reverse Recovery Time trr 11.3 14 Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IF= 0.65A, dI/dt= 100A/us IS VSD IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking C0** www.kexin.com.cn Ω 2 0.17 Qgs Diode Forward Voltage 2 ±10 3 TJ=125℃ Qg Gate Source Charge uA 1.7 VGS=4.5V, ID=0.5A ID(ON) Unit V VGS=10V, ID=0.65A On state drain current Max 7.5 pF Ω nC ns nC 1.2 A 1 V MOSFET SMD Type N-Channel MOSFET AO3460 (KO3460) ■ Typical Characterisitics 1 2 10V 6V 1.5 VDS=5V 0.8 4.5V ID(A) ID (A) 0.6 4V 1 25°C 0.4 3.5V 0.5 0.2 125°C VGS=3.0V 0 0 1 2 3 4 0 5 0 1 3 Normalized On-Resistance RDS(ON) (Ω Ω) 3 4 5 2.2 2.5 VGS=4.5V 2 1.5 VGS=10V 0 0.5 1 1.8 VGS=4.5V ID=0.5A 1.4 1.0 0.6 1.5 VGS=10V ID=0.65A -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 1.0E+00 ID=0.65A 3.5 25°C 1.0E-01 125°C -40°C IS (A) 3 2.5 1.0E-02 125°C 1.0E-03 2 25°C 1.5 1 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 4 RDS(ON) (Ω Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 1 -40°C 2 1.0E-04 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.4 0.8 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3460 (KO3460) ■ Typical Characterisitics 30 10 VDS=30V ID=0.65A 6 4 2 0 Ciss 25 Capacitance (pF) VGS (Volts) 8 20 15 10 Coss 5 0.0 0.1 0.2 0.3 0.4 0.5 0 0.6 Crss 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 20 10µs 100µs 1ms 10ms RDS(ON) limited 0.100 0.1s 1s 10s DC 0.010 0.1 1 10 VDS (Volts) 1 60 12 8 100 0 0.0001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 50 4 TJ(Max)=150°C TC=25°C 0.01 40 TJ(Max)=150°C TA=25°C 16 Power (W) ID (Amps) 1.000 Zθ JA Normalized Transient Thermal Resistance 30 VDS (Volts) Figure 8: Capacitance Characteristics 10.000 0.001 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 www.kexin.com.cn 10 100