SMD Type MOSFET

MOSFET
SMD Type
P-Channel MOSFET
AO4425 (KO4425)
SOP-8
■ Features
● VDS (V) =-38V
● ID =-14 A (VGS =-20V)
● RDS(ON) < 10mΩ (VGS =-20V)
1.50 0.15
● RDS(ON) < 11mΩ (VGS =-10V)
0.21 -0.02
+0.04
● ESD Rating: 3000V HBM
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-38
Gate-Source Voltage
VGS
±25
Continuous Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
ID
IDM
TA=25°C
TA=70°C
t ≤ 10s
Steady-State
PD
RthJA
RthJL
Unit
V
-14
-11
A
-50
3.1
2
W
40
75
℃/W
24
Junction Temperature
TJ
150
Junction Storage Temperature Range
Tstg
-55 to 150
℃
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1
MOSFET
SMD Type
P-Channel MOSFET
AO4425 (KO4425)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
Gate Threshold Voltage
VGS(th)
Test Conditions
Min
Typ
ID=-250μA, VGS=0V
VDS=-30V, VGS=0V
-100
VDS=-30V, VGS=0V, TJ=55℃
-500
VDS=0V, VGS=±20V
±1
VDS=0V, VGS=±25V
±10
VDS=VGS ,ID=-250μA
RDS(On)
VGS=-20V, ID=-14A
-2
-3.5
ID(ON)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
13.5
TJ=125℃
VGS=-10V, VDS=-5V
VDS=-5V, ID=-14A
-50
43
VGS=0V, VDS=-20V, f=1MHz
7.5
VGS=-10V, VDS=-20V, ID=-14A
td(on)
12.4
VGS=-10V, VDS=-20V, RL=1.35Ω,
RGEN=3Ω
tf
trr
Body Diode Reverse Recovery Charge
Qrr
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
VSD
Marking
2
4425
KC****
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nC
14.1
9.2
ns
97.5
45.5
IF=-14A, dI/dt=100A/us
35
33
IS=-1A,VGS=0V
Note : The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
■ Marking
Ω
63
Turn-On DelayTime
Body Diode Reverse Recovery Time
pF
350
VGS=0V, VDS=0V, f=1MHz
16.1
Turn-Off Fall Time
S
560
Qgs
tr
mΩ
3800
Qgd
td(off)
V
A
Gate Source Charge
Turn-Off DelayTime
uA
11
Gate Drain Charge
Turn-On Rise Time
nA
10
VGS=-10V, ID=-14A
On state drain current
Unit
V
VGS=-20V, ID=-14A
Static Drain-Source On-Resistance
Max
-38
nC
-4.2
A
-1
V
MOSFET
SMD Type
P-Channel MOSFET
AO4425 (KO4425)
■ Typical Characterisitics
30
30
-20V
-10V
-5V
25
20
-4.5V
-ID(A)
-ID (A)
20
-4V
15
-3.5V
10
5
2
3
4
2
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
1.6
VGS=-10V
9
RDS(ON) (mΩ)
25°C
0
5
-VDS (Volts)
Fig 1: On-Region Characteristics
8
VGS=-20V
7
6
0
5
10
15
20
25
VGS=-10V
ID = -14A
1.4
VGS=-20V
ID = -14A
1.2
1
0.8
30
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
20
1.0E+01
ID=-14A
1.0E+00
1.0E-01
15
125°C
-IS (A)
RDS(ON) (mΩ)
125°C
5
0
1
15
10
VGS=-3V
0
VDS=-5V
25
10
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
25°C
1.0E-05
1.0E-06
5
4
8
12
16
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
20
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
SMD Type
P-Channel MOSFET
AO4425 (KO4425)
■ Typical Characterisitics
5000
10
VDS=-15V
ID=-14A
Capacitance (pF)
6
4
2000
1000
0
0
10
20
30
40
50
60
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
70
Coss
Crss
0
10
20
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
40
10µs
RDS(ON)
limited
-ID (Amps)
3000
2
0
Ciss
4000
30
1ms
10.0
10ms
0.1s
1.0
1s
20
10
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.1
40
TJ(Max)=150°C
TA=25°C
100µs
Power (W)
-VGS (Volts)
8
1
-VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
.
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
4
0.0001
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0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000