SMD Type MOSFET

MOSFET
SMD Type
N-Channel MOSFET
AO3442 (KO3442)
SOT-23-3
Unit: mm
■ Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
● RDS(ON) < 630mΩ (VGS = 10V)
1
0.55
● ID = 1 A (VGS = 10V)
+0.2
1.6 -0.1
+0.2
2.8 -0.1
● VDS (V) = 100V
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
+0.2
-0.1
● RDS(ON) < 720mΩ (VGS = 4.5V)
1.1
D
0-0.1
+0.1
0.68 -0.1
1. Gate
2. Source
3. Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
ID
IDM
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
PD
RthJA
RthJC
Unit
V
1
0.8
A
4
1.4
0.9
W
90
125
℃/W
80
TJ
150
Tstg
-55 to 150
℃
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MOSFET
SMD Type
N-Channel MOSFET
AO3442 (KO3442)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Test Conditions
ID=250 uA, VGS=0V
Min
Typ
100
1
VDS=100 V, VGS=0V, TJ=55℃
5
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
RDS(On)
VGS=10V, ID=1A
1.7
Forward Transconductance
ID(ON)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge
(10V)
Total Gate Charge
(4.5V)
VGS=10V, VDS=5V
VDS=5V, ID=1A
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=1A
2.5
7.5
2.8
6
1.5
3
0.4
5
VGS=10V, VDS=50V, RL=50Ω,RG=3Ω
tf
trr
Qrr
Maximum Body-Diode Continuous Current
IS
VSD
Marking
BC**
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Ω
nC
4
ns
12
5
IF= 5.6A, dI/dt= 100A/us
IS=1A,VGS=0V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
pF
5
td(on)
Body Diode Reverse Recovery Time
S
13
Turn-On DelayTime
Body Diode Reverse Recovery Charge
mΩ
100
VGS=0V, VDS=50V, f=1MHz
0.8
Diode Forward Voltage
2
2.8
Qgd
Turn-Off Fall Time
V
A
Gate Drain Charge
tr
2.9
720
Qgs
td(off)
nA
4
Gate Source Charge
Turn-Off DelayTime
±100
1200
TJ=125℃
Qg
Turn-On Rise Time
uA
630
VGS=4.5V, ID=0.8A
On state drain current
Unit
V
VDS=100 V, VGS=0V
VGS=10V, ID=1A
Static Drain-Source On-Resistance
Max
52
60
nC
1
A
1.2
V
MOSFET
SMD Type
N-Channel MOSFET
AO3442 (KO3442)
■ Typical Characterisitics
3
5
VDS=5V
10V
6V
2.5
5V
4
4.5V
2
ID (A)
ID(A)
3
2
1.5
3.5V
1
1
125°C
25°C
0.5
VGS=3.0V
0
0
0
1
2
3
4
0
5
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1200
Normalized On-Resistance
2.4
1000
VGS=4.5V
RDS(ON) (mΩ
Ω)
800
600
VGS=10V
400
200
2.2
VGS=10V
ID=1A
2
1.8
1.6
1.4
1.2
VGS=4.5V
ID=0.8A
1
0.8
0
0
0.5
0
1
1.5
2
2.5
3
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1200
ID=1A
900
1.0E+00
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
1
600
1.0E-02
25°C
1.0E-03
25°C
300
125°C
1.0E-04
1.0E-05
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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MOSFET
SMD Type
N-Channel MOSFET
AO3442 (KO3442)
■ Typical Characterisitics
10
160
VDS=50V
ID=1A
140
120
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
100
80
60
40
2
Crss
Coss
20
0
0
0
0.5
1
1.5
2
2.5
Qg (nC)
Figure 7: Gate-Charge Characteristics
3
0
1.0
1000
100µs
1ms
0.1
DC
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
VDS (Volts)
Power (W)
RDS(ON)
limited
0.0
10
1
100
10ms
10
10s
1
100
1E-05
1000
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
.
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
100
TA=25°C
10µs
ID (Amps)
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
10000
10.0
Zθ JA Normalized Transient
Thermal Resistance
20
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100
1000