SMD Type Transistors

Transistors
SMD Type
NPN Transistors
2SC2713
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
● Low noise: NF = 1dB (typ.), 10dB (max)
1
0.55
● High hFE: hFE = 200~700
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● High voltage: VCEO = 120 V
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
● Small package
+0.05
0.1 -0.01
+0.1
0.97 -0.1
● Complementary to 2SA1163
1.Base
0-0.1
+0.1
0.38 -0.1
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
120
Collector - Emitter Voltage
VCEO
120
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
100
BaseCurrent
IB
20
Collector Power Dissipation
PC
150
Junction Temperature
TJ
125
Tstg
-55 to 125
Storage Temperature Range
Unit
V
mA
mW
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
120
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
120
Typ
Max
Unit
V
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
Collector-base cut-off current
ICBO
VCB= 120 V , IE= 0
5
100
Emitter cut-off current
IEBO
VEB= 5V , IC=0
100
nA
Collector-emitter saturation voltage
VCE(sat)
IC=10 mA, IB=1mA
0.3
Base - emitter saturation voltage
VBE(sat)
IC=10 mA, IB=1mA
1.2
DC current gain
hFE
VCE= 6V, IC= 2mA
Noise figure
NF
VCE = 6 V, IC = 0.1 mA ,f=1KHz
RG = 10 kΩ
1
Collector output capacitance
Cob
VCB= 10V, IE= 0,f=1MHz
3
pF
100
MHz
Transition frequency
fT
VCE= 6V, IC= 1mA
200
V
700
10
dB
■ Classification of hfe
Type
2SC2713-G
2SC2713-L
Range
200-400
350-700
Marking
DG
DL
www.kexin.com.cn
1
Transistors
SMD Type
NPN Transistors
2SC2713
■ Typical Characterisitics
2
www.kexin.com.cn
Transistors
SMD Type
NPN Transistors
2SC2713
■ Typical Characterisitics
www.kexin.com.cn
3