JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate MOSFETS CJI02N60 N-Channel Power MOSFET TO-126 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. 1. GATE 2. DRAIN 3. SOURCE FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Diode is Characterized for Use in Bridge Circuits Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS Value 600 Unit V VGS ±20 Continuous Drain Current ID 2 Pulsed Drain Current IDM 4 Power Dissipation PD 1.25 W Single Pulsed Avalanche Energy* EAS 128 mJ Thermal Resistance, Junction-to-Ambient R θJA 100 Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 TL 260 Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds A ℃/W ℃ ℃ *EAS condition: Tj=25℃,VDD=50V,L=64mH,IAS=2A,RG=25Ω A-1,Sep,2013 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =2A Zero gate voltage drain current IDSS VDS =600V, VGS =0V Gate-body leakage current (n IGSS VDS =0V, VGS =±20V 600 1.6 V 0.25 µA ±100 nA 4.0 V 4.4 Ω On characteristics (note2) Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-resistance RDS(on) VGS =10V, ID =1A Forward Transconductance (note1) gFS VDS =50V, ID =1A 2.0 1 S Dynamic characteristics (note 3) 435 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 9.2 td(on) 12 VDS =25V,VGS =0V,f =1MHz 56 pF Switching characteristics (note 3) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf VDD=300V, VGS=10V, 21 RG=18Ω, ID =2A 30 ns 24 Notes : 1. 2. L=16mH, IL=5A, VDD=50V,,RG=25Ω,Starting TJ=25℃. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. A-1,Sep,2013