MTB06N03V8

Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB06N03V8
BVDSS
ID
RDSON(TYP)
30V
44A
VGS=10V, ID=14A 4.5mΩ
VGS=4.5V, ID=10A 6.4mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
Outline
MTB06N03V8
DFN3×3
Pin 1
G：Gate
D：Drain S：Source
Ordering Information
Device
MTB06N03V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB06N03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=14A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation
TA=100℃
VDS
VGS
Operating Junction and Storage Temperature Range
Tj, Tstg
30
±20
44
28
16
10
150 *1
14
9.8
4.9 *2
2.5 *3
1.5
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
6
50 *3
ID
IDM
IAS
EAS
EAR
PD
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by the customer’s PCB characteristics.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
*1
IDSS
RDS(ON)
Dynamic
Ciss
Coss
Crss
MTB06N03V8
*1
Min.
Typ.
Max.
Unit
30
1.0
-
1.5
20
4.5
6.4
3.0
±100
1
25
6
9.5
V
V
S
nA
-
2796
308
268
-
Test Conditions
mΩ
mΩ
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=14A
VGS=±20
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VGS =10V, ID=14A
VGS =4.5V, ID=10A
pF
VDS=15V, VGS=0V, f=1MHz
μA
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Min.
-
Typ.
37
23
8.1
10.3
18
23
60
34
1.4
Max.
-
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
0.76
28
12
4
16
1.2
-
Unit
Test Conditions
nC
VDS=15V, VGS=10V, ID=14A
ns
VDS=15V, ID=1A, VGS=10V, RGS=6Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB06N03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
BVDSS, Normalized Drain-Source
Breakdown Voltage
150
ID, Drain Current(A)
10V, 9V,8V,7V,6V,5V
120
VGS=4V
90
60
VGS=3V
1.4
1.2
1
0.8
30
ID=250μA,
VGS=0V
0.6
VGS=2V
0.4
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-60
10
Static Drain-Source On-State resistance vs Drain Current
180
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
100
VGS=2.5V
VGS=3V
10
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
1
0.2
0.1
1
10
ID, Drain Current(A)
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
1.8
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
90
ID=14A
80
70
60
50
40
30
20
10
1.6
VGS=10V, ID=14A
1.4
1.2
1
0.8
0.6
RDS(ON) @ Tj=25°C : 4.6 mΩ
0.4
0
0
MTB06N03V8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
1.6
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
60
100
140
Gate Charge Characteristics
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
20
Tj, Junction Temperature(°C)
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=14A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
5
10
15
20
25
30
Total Gate Charge---Qg(nC)
35
40
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
50
1000
ID, Drain Current(A)
100
RDS(ON) Limit
100μs
10
1ms
10ms
1
100ms
TA=25°C, Tj(max)=150°C,
VGS=10V, RθJA=50°C/W
Single Pulse
0.1
1s
DC
ID, Maximum Drain Current(A)
45
40
35
30
25
20
15
10
VGS=10V, RθJC=6°C/W
5
0
0.01
0.01
MTB06N03V8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
300
100
VDS=10V
Peak Transient Power (W)
90
ID, Drain Current (A)
80
70
60
50
40
30
20
250
TJ(MAX) =150°C
TA=25°C
θJA=50°C/W
200
150
100
50
10
0
0
2
4
6
8
VGS , Gate-Source Voltage(V)
10
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.1
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB06N03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB06N03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB06N03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2010.10.05
Revised Date : 2013.10.30
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
D D
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Inches
Min.
Max.
0.0276
0.0354
0.0000
0.0197
0.0094
0.0138
0.0039
0.0079
0.1280
0.1339
0.1201
0.1280
0.0945
0.1024
DIM
A
A1
b
c
D
D1
D2
Millimeters
Min.
Max.
0.70
0.90
0.00
0.50
0.24
0.35
0.10
0.20
3.25
3.40
3.05
3.25
2.40
2.60
DIM
E
E1
e
H
L
L1
L2
Inches
Min.
Max.
0.1181
0.1260
0.0531
0.0610
0.0256 BSC
0.1260
0.1339
0.0118
0.0197
0.0039
0.0079
0.0445 REF
Millimeters
Min.
Max.
3.00
3.20
1.35
1.55
0.65 BSC
3.20
3.40
0.30
0.50
0.10
0.20
1.13 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB06N03V8
CYStek Product Specification