BCX53M3

CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 1/6
General Purpose PNP Epitaxial Planar Transistor
BCX53M3
Features
• High breakdown voltage, BVCEO≥ -80V
• Large continuous collector current capability
• Low collector saturation voltage
• Complementary to BCX56M3
• Pb-free lead plating and halogen-free package
Symbol
Outline
BCX53M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Ordering Information
Device
BCX53M3-XX-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BCX53M3
CYStek Product Specification
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Limits
-100
-80
-5
-1
-1.5
Unit
V
A
0.6
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
1
(Note 1)
2
(Note 2)
208
83.3 (Note 1)
59.5 (Note 2)
-55~+150
-55~+150
W
°C/W
°C
°C
2 . When mounted on ceramic with area measuring 40×40×1 mm
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-100
-80
-5
100
100
40
150
-
Typ.
-0.16
-
Max.
-100
-20
-0.5
-1
400
25
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=-100μA
IC=-10mA
IE=-10μA
VCB=-80V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
16
25
Range
100~250
160~400
BCX53M3
CYStek Product Specification
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
1000
Saturation Voltage---(V)
Current Gain---HFE
VCESAT
VCE=5V
100
VCE=2V
1000
IC=20IB
100
IC=10IB
10
10
1
10
100
1000
1
10000
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
10000
10000
[email protected]=10IB
[email protected]=2V
On Voltage---(mV)
Saturation Voltage---(mV)
10
1000
1000
100
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curves
Power Dissipation---PD(W)
2.5
See Note 2 on page 1
2
1.5
See Note 1 on page 1
1
0.5
0
0
BCX53M3
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BCX53M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BCX53M3
CYStek Product Specification
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 6/6
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
Device
Code
H
C
AK
□□
Date Code
D
B
E
I
F
G
Style: Pin 1. Base 2. Collector 3. Emitter
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BCX53M3
CYStek Product Specification