BC807N3

CYStech Electronics Corp.
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2014.12.03
Page No. : 1/7
General Purpose PNP Epitaxial Planar Transistor
BC807N3
Description
• The BC807N3 is designed for general purpose switching and amplification applications. It is housed in
the SOT-23/SC-59 package which is designed for low power surface mount applications.
• Low VCE(sat)
• High switching speed.
• Complementary to BC817N3
• Pb-free lead-free and halogen-free package
Symbol
Outline
BC807N3
SOT-23
B:Base
C:Collector
E:Emitter
Ordering Information
Device
BC807N3-XX-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BC807N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2014.12.03
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @TA=25℃
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limits
-50
-45
-5
-500
225 (Note 1)
556 (Note 1)
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Note 1:When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE
fT
Cob
Min.
-50
-45
-5
100
40
80
-
Typ.
-0.5
9
Max.
-100
-100
-0.7
-1.2
600
-
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=-10μA
IC=-10mA
IE=-10μA
VCB=-20V
VEB=-5V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-500mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 1:
Rank
16
25
40
Range
100--250
160--400
250--600
BC807N3
CYStek Product Specification
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2014.12.03
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=10V
100
10
100
10
0.1
1
10
100
1000
0.1
Collector Current---IC(mA)
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
10000
1000
VBE(SAT)@IC=10IB
VCE=20V
Cutoff Frequency---fT(MHz)
Saturation Voltage---(mV)
1
1000
100
100
0.1
1
10
100
1000
Collector Current---IC(mA)
1
10
Collector Current---IC(mA)
100
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
BC807N3
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2014.12.03
Page No. : 4/7
Recommended Soldering Footprint
BC807N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2014.12.03
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BC807N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2014.12.03
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BC807N3
CYStek Product Specification
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2014.12.03
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Device Code
9F
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead :Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BC807N3
CYStek Product Specification